公开(公告)号：US20020164426A1

公开(公告)日：2002-11-07

申请号：US10095605

申请日：2002-03-11

Inventor： Thomas James Ennis ,  William Harrison Hill ,  William August Kirn ,  Joseph Martin Rokowski

IPC: B05D003/10

CPC classification number: C23C22/56 ,  B05D3/10 ,  B05D7/04 ,  B32B11/04 ,  C08J7/042 ,  C08J2323/16 ,  C08J2483/04 ,  C11D1/72 ,  C11D3/06 ,  C11D3/08 ,  C11D7/14 ,  C11D7/16 ,  C11D11/0023 ,  C23C22/53

Abstract: Adhesion between a coating and a substrate may be improved by pre-treating the surface of the substrate with an aqueous detergent composition having a pH above 8 and comprising from 1 to 10% by weight phosphate and from 1 to 10% by weight silicate, before application of the coating.

Abstract translation: 可以通过用pH高于8并含有1-10重量％磷酸盐和1-10重量％硅酸盐的含水洗涤剂组合物预处理基材表面来改善涂层和基材之间的粘合性，之前 应用涂层。

公开(公告)号：US20020119245A1

公开(公告)日：2002-08-29

申请号：US10074516

申请日：2002-02-13

Inventor： Steven Verhaverbeke

IPC: B05D005/12 ,  B05D003/10 ,  B05D001/18

CPC classification number: C23F1/26 ,  H01L21/32134

Abstract: The present invention provides methods of wet processing electronic components having surfaces containing tantalum. In the methods of the present invention, tantalum-containing electronic components are contacted with a tantalum processing fluid comprising a tantalum oxidizing solution containing an oxidizing agent and a fluorine ion producing agent.

Abstract translation: 本发明提供湿法加工具有包含钽的表面的电子部件的方法。 在本发明的方法中，含钽电子元件与包含含有氧化剂和氟离子生成剂的钽氧化溶液的钽加工流体接触。

公开(公告)号：US20020102441A1

公开(公告)日：2002-08-01

申请号：US10000953

申请日：2001-12-04

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Katsuhiro Shinosawa ,  Takao Shirai ,  Noritaka Nakayama

IPC: B32B009/00 ,  B05D003/10

CPC classification number: C04B35/581 ,  H05K1/0306 ,  Y10T428/24917 ,  Y10T428/26

Abstract: An aluminum nitride substrate includes an aluminum nitride sintered body containing a rare earth oxide as a sintering additive component. In the aluminum nitride substrate, a surface thereof is machined so that arithmetic average roughness Ra is 0.5 nullm or less; an aggregate size of the sintering additive component present on the machined surface is 20 nullm or less; and a total aggregate area in a unit area of the machined surface is 5% or less. A metal thin film is deposited on such machined surface with good intimate contact properties, and furthermore deposition accuracy or the like is improved.

Abstract translation: 氮化铝衬底包括含有稀土氧化物作为烧结添加剂组分的氮化铝烧结体。 在氮化铝基板中，对其表面进行加工，使得算术平均粗糙度Ra为0.5μm以下; 存在于加工表面上的烧结添加剂组分的聚集体尺寸为20μm或更小; 加工面的单位面积的总骨料面积为5％以下。 金属薄膜沉积在这样加工的表面上，具有良好的紧密接触性能，此外提高了沉积精度等。

公开(公告)号：US20020094449A1

公开(公告)日：2002-07-18

申请号：US09990373

申请日：2001-11-23

Inventor： Isamu Takeuchi ,  Masaaki Morimitsu

IPC: B32B015/20 ,  B05D005/12 ,  B05D001/18 ,  B05D003/10

CPC classification number: H05K3/244 ,  C23C18/1607 ,  C23C18/1651 ,  Y10T428/12715 ,  Y10T428/12792 ,  Y10T428/12889 ,  Y10T428/12896

Abstract: A laminated structure for electronic equipment includes a printed circuit board having copper foil, an undercoat plating layer made of tin or silver, formed on the printed circuit board, and a gold plating layer formed on the undercoat plating layer by electroless plating. Tin or silver is a metal which acts as an anticatalyst in electroless plating. After formation of the undercoat plating layer, the printed circuit board is dipped in catalyst-applying treating liquid to inhibit the anticatalyst.

Abstract translation: 电子设备的叠层结构包括：印刷电路板上形成有铜箔的印刷电路板，由锡或银制成的底涂层，以及通过无电镀形成在底涂层上的镀金层。 锡或银是在化学镀中作为反催化剂的金属。 在底涂层形成之后，将印刷电路板浸入催化剂施加处理液中以抑制反催化剂。

公开(公告)号：US20020076503A1

公开(公告)日：2002-06-20

申请号：US09462406

申请日：2000-04-28

Inventor： PATRICK BORREANI ,  PIERRE VAILLE

IPC: B05D003/10

CPC classification number: B29C41/20 ,  A41D19/0065 ,  B29C33/305 ,  B29C41/14 ,  B29K2075/00 ,  B29K2105/04 ,  B29K2313/02 ,  B29L2031/4864

Abstract: The invention concerns a clothing article characterized in that: the textile support receives and adherence primer in the form of an aqueous calcium nitrate; the textile support with the adherence primer is subjected, entirely or partially, to a coating based on a foamed aqueous polymer; the foamed aqueous polymer only appears on the support outer part without going through the mesh so as not to produce contact with the corresponding part of the body.

Abstract translation: 本发明涉及一种服装制品，其特征在于：纺织品支持体接收硝酸钙水溶液形式的粘附底漆; 具有粘附性底漆的纺织品支撑体完全或部分地经受基于发泡的含水聚合物的涂层; 发泡水性聚合物仅出现在支撑体外部，而不经过网状物，以便不与身体的相应部分产生接触。

公开(公告)号：US20020069788A1

公开(公告)日：2002-06-13

申请号：US10000865

申请日：2001-10-24

Applicant: Shipley Company, L.L.C.

Inventor： Martin T. Goosey ,  Narinder Singh Bains

IPC: C23C018/52 ,  B05D003/10 ,  B05D001/36

CPC classification number: C23C18/30 ,  C23C18/2033 ,  C23C18/206

Abstract: Disclosed are new catalysts for electroless metallization deposition, particularly catalysts that can be selectively activated and may be free of palladium and/or tin. Catalysts of the invention are preferably employed for electroless copper deposition.

Abstract translation: 公开了用于无电金属化沉积的新催化剂，特别是可以选择性活化并且可以不含钯和/或锡的催化剂。 本发明的催化剂优选用于无电沉积铜。

公开(公告)号：US20020018845A1

公开(公告)日：2002-02-14

申请号：US09935588

申请日：2001-08-24

Inventor： Yasuo Takahashi ,  Naoko Miura

IPC: B05D005/12 ,  B05D003/02 ,  B05D003/10

CPC classification number: B05D5/12 ,  H01J9/027

Abstract: A method for manufacturing an electron-emitting device processing an electroconductive film upon which an electron-emission region is formed is characterized in that the formation process of formation of the electron-emission region includes a process of application of metal compound-containing material and film thickness controlling agent to the substrate. A method for manufacturing an electron source comprises a substrate, and a plurality of electron-emitting devices arrayed upon the substrate, wherein the electron-emitting devices are manufactured according to the method for manufacturing the electron-emitting device. A method for manufacturing an image-forming apparatus comprises a substrate, an electron source comprised of a plurality of electron-emitting devices arrayed upon the substrate, and an image-forming member, wherein the electron-emitting devices are manufactured according to the method for manufacturing an electron-emitting device.

Abstract translation: 制造形成电子发射区域的导电膜的电子发射器件的制造方法的特征在于形成电子发射区域的形成过程包括施加含金属化合物的材料和膜的方法 厚度控制剂。 制造电子源的方法包括基板和排列在基板上的多个电子发射器件，其中根据制造电子发射器件的方法制造电子发射器件。 一种用于制造图像形成装置的方法包括：基板，由在基板上排列的多个电子发射器件组成的电子源和图像形成部件，其中，根据本发明的方法制造电子发射器件， 制造电子发射器件。

公开(公告)号：US20020004102A1

公开(公告)日：2002-01-10

申请号：US09780132

申请日：2001-02-09

Inventor： Cheol Park ,  Sharon E. Lowther ,  Terry L. St. Clair

IPC: B05D001/36 ,  B05D003/10

CPC classification number: C23C22/66 ,  C23C22/62 ,  C23C22/64 ,  C23C22/78

Abstract: A simple surface treatment process is provided which offers a high performance surface for a variety of applications at low cost. This novel surface treatment, which is particularly useful for Ti-6A1-4V alloys, is achieved by forming oxides on the surface with a two-step chemical process and without mechanical abrasion. First, after solvent degreasing, sulfuric acid is used to generate a fresh titanium surface. Next, an alkaline perborate solution is used to form an oxide on the surface. This acid-followed-by-base treatment is cost effective and relatively safe to use in commercial applications. In addition, it is chromium-free, and has been successfully used with a sol-gel coating to afford a strong adhesive bond that exhibits excellent durability after the bonded specimens have been subjected to a harsh 72 hour water boil immersion. Phenylethynyl containing adhesives were used to evaluate this surface treatment with a novel coupling agent containing both trialkoxysilane and phenylethynyl groups. The morphology of the interface between the metal surface and the adhesive was investigated using scanning electron microscopy and atomic force microscopy. Lap shear specimen failures were compared for adhesive bonds made with a conventional surface preparation and this new treatment. The test results at hot-wet environment demonstrate an approximately 90% retention of initial strengths. It is expected that this process will establish a low cost and high performance surface for not only high-speed commercial aircraft but also for other commercial applications.

Abstract translation: 提供了一种简单的表面处理工艺，为低成本的各种应用提供了高性能表面。 这种对Ti-6A1-4V合金特别有用的新型表面处理是通过在两个阶段的化学工艺上形成氧化物并且没有机械磨损来实现的。 首先，在溶剂脱脂后，使用硫酸生成新鲜的钛表面。 接下来，使用碱性过硼酸盐溶液在表面上形成氧化物。 这种酸 - 逐个处理在商业应用中具有成本效益和相对安全性。 此外，它是无铬的，并且已经成功地用于溶胶 - 凝胶涂层以提供强烈的粘合剂粘合，其在粘合的样品经受了苛刻的72小时水煮浸渍后显示出优异的耐久性。 使用含苯基乙炔基的粘合剂来评价该表面处理，其中含有三烷氧基硅烷和苯基乙炔基的新型偶联剂。 使用扫描电子显微镜和原子力显微镜研究金属表面和粘合剂之间的界面的形态。 比较了用常规表面处理制备的粘合剂粘合剂和这种新处理的搭接剪切试样失效。 在热湿环境下的测试结果表明初始强度保持约90％。 预计这一过程将为不仅高速商用飞机而且为其他商业应用建立低成本和高性能的表面。

公开(公告)号：US20010028923A1

公开(公告)日：2001-10-11

申请号：US09863592

申请日：2001-05-22

Inventor： Leonard Forbes ,  Kie Y. Ahn

IPC: B05D003/10 ,  C23C016/00

CPC classification number: H01L21/02164 ,  H01L21/02203 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10S438/96

Abstract: The invention encompasses methods of forming insulating materials proximate conductive elements. In one aspect, the invention includes a method of forming an insulating material proximate a substrate comprising: a) chemical vapor depositing a first material proximate a substrate; b) forming cavities within the first material; and c) after forming cavities within the first material, transforming at least some of the first material into an insulative second material. In anther aspect, the invention includes a method of forming an insulating material proximate a substrate comprising: a) forming porous polysilicon proximate a substrate; and b) transforming at least some of the porous polysilicon into porous silicon dioxide. In yet another aspect, the invention includes a method of forming an insulating material between components of an integrated circuit comprising: a) chemical vapor depositing polysilicon between two components; b) electrochemical anodization of the polysilicon to convert the polysilicon into a porous mass having a first volume, the first volume comprising a polysilicon volume and a cavity volume, the cavity volume comprising greater than or equal to about 75% of said first volume; and c) oxidizing the porous polysilicon mass to transform the polysilicon into porous silicon dioxide having a second volume, the second volume comprising a silicon dioxide volume and a cavity volume, the cavity volume comprising less than or equal to about 50% of said second volume.

Abstract translation: 本发明包括在导电元件附近形成绝缘材料的方法。 一方面，本发明包括一种在衬底附近形成绝缘材料的方法，包括：a）化学气相沉积靠近衬底的第一材料; b）在第一材料内形成空腔; 以及c）在所述第一材料中形成空腔之后，将所述第一材料中的至少一些转化为绝缘的第二材料。 在另一方面，本发明包括一种在衬底附近形成绝缘材料的方法，包括：a）在衬底附近形成多孔多晶硅; 和b）将多孔多晶硅中的至少一些转化为多孔二氧化硅。 在另一方面，本发明包括在集成电路的部件之间形成绝缘材料的方法，包括：a）在两个部件之间化学气相沉积多晶硅; b）多晶硅的电化学阳极氧化以将多晶硅转化为具有第一体积的多孔质量体，所述第一体积包含多晶硅体积和腔体积，所述空腔体积包含大于或等于所述第一体积的约75％; 以及c）氧化所述多孔多晶硅质量以将所述多晶硅转化为具有第二体积的多孔二氧化硅，所述第二体积包含二氧化硅体积和空腔体积，所述空腔体积包含小于或等于所述第二体积的约50％ 。

公开(公告)号：US20010019739A1

公开(公告)日：2001-09-06

申请号：US09735931

申请日：2000-12-14

Inventor： Ryoh Itoh

IPC: B05D003/10 ,  B05D001/18 ,  B05D005/02

CPC classification number: C23C18/1608 ,  C23C18/1605 ,  H05K1/0284 ,  H05K3/0076 ,  H05K3/061 ,  H05K3/181 ,  H05K3/184 ,  H05K2203/0769 ,  H05K2203/0786

Abstract: There is provided a method for partially plating on a base of synthetic resins or other materials including not only a single base but an assembly thereof comprising a number of chip bases for producing electronic and electric parts such as printed circuit board, lead frame insert molded circuit parts, etc. A method for partially plating on an assembly of bases 21 by the use of a plating catalyst comprising a coating process to coat a surface to be plated or not to be plated by means of a coating material selected from a water soluble polymer or hydrolyzable polymer either before or after a catalyst applying process to soak a container containing bases 21 in a plating catalyst bath.

Abstract translation: 提供了一种在合成树脂或其它材料的基部上部分镀覆的方法，不仅包括单个基底，而且包括其组合件，其包括用于生产电子和电气部件的许多芯片基底，例如印刷电路板，引线框架插入模制电路 零件等。一种通过使用电镀催化剂部分电镀在基体21上的方法，所述电镀催化剂包括涂覆方法，以通过选自水溶性聚合物的涂层材料涂覆待镀层或未镀覆的表面 或在催化剂施加过程之前或之后将含有碱21的容器浸泡在电镀催化剂浴中的可水解聚合物。