公开(公告)号：US5823681A

公开(公告)日：1998-10-20

申请号：US604997

申请日：1996-02-29

Applicant: Dario Cabib ,  Robert A. Buckwald ,  Michael E. Adel

Inventor： Dario Cabib ,  Robert A. Buckwald ,  Michael E. Adel

IPC: G01J5/00 ,  G01J5/60 ,  G01J5/08 ,  G01J5/02 ,  G01J5/06 ,  G01J5/28 ,  G01J5/62

CPC classification number: G01J5/0003 ,  G01J5/60

Abstract: An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer. The system includes a semiconductor wafer emissivity compensation station for measuring the reflectivity of the wafer at discrete wavelengths to yield wafer emissivity in specific wavelength bands. The system further includes a measurement probe which is optically coupled to a semiconductor process chamber. The probe senses wafer self emission using one or more optical detectors and a light modulator. A background temperature determining mechanism independently senses the temperature of a source of background radiation. Finally, a mechanism calculates the temperature of the semiconductor wafer based on the reflectivity, self-emission and background temperature.

Abstract translation: PCT No.PCT / US95 / 08521 Sec。 371日期1996年2月29日 102（e）日期1996年2月29日PCT提交1995年7月12日PCT公布。 公开号WO96 / 04534 日期1996年2月15日用于测量半导体晶片的温度的发射率补偿非接触式系统。 该系统包括半导体晶片发射率补偿站，用于以离散波长测量晶片的反射率，以产生特定波长带中的晶片辐射率。 该系统还包括光学耦合到半导体处理室的测量探针。 探头使用一个或多个光学检测器和光调制器感测晶片自发射。 背景温度测定机构独立地感测背景辐射源的温度。 最后，机构基于反射率，自发射和背景温度来计算半导体晶片的温度。

公开(公告)号：USH1354H

公开(公告)日：1994-09-06

申请号：US772199

申请日：1991-10-07

Applicant: Otto R. Martinez

Inventor： Otto R. Martinez

IPC: G01J5/06 ,  G01J5/28 ,  G01J1/00

CPC classification number: G01J5/28 ,  G01J5/061

Abstract: An optical data transducer system is described which comprises a cryogenic dewar for containing an infrared focal plane array at low temperature and an optical spatial light modulator, collimated laser beam and associated optical train and detector for efficient extraction of information from the array.

公开(公告)号：US5298752A

公开(公告)日：1994-03-29

申请号：US953058

申请日：1992-09-30

Applicant: Ralph H. Wight

Inventor： Ralph H. Wight

IPC: G01J5/06 ,  G01J5/28

CPC classification number: G01J5/06 ,  G01J2005/065 ,  G01J2005/283

Abstract: A thermal or infrared imaging system having an optical barrel, an external stop formed by a mirror, a dewar, a cold shield, a focal plane array, and multiple retroreflectors. The cold shield and focal plane array are located inside the dewar. The mirror directs desired light bundles at the focal plane array. The retroreflectors are attached to the inside of the optical barrel. The retroreflectors are arranged such that the retroreflectors exist in all lines of sight of the focal plane array, except those lines of sight associated with the external stop. Consequently, the retroreflectors do not interfere with the desired light bundles which are focused onto the focal plane array. However, all light outside of that which is focused is prevented from reaching the focal plane array by the retroreflectors. The retroreflectors are infrared retroreflectors arranged in a matrix. Each of the retroreflectors is a "concave" corner cube having low emissivity reflecting facets. The corner cubes reflect incoming rays by 180 degrees relative to input angles of the incoming rays. Thus, the focal plane array sees only cold outside of the desired light bundles.

Abstract translation: 具有光学镜筒，由镜子形成的外部止挡件，杜瓦瓶，冷屏蔽罩，焦平面阵列和多个后向反射器的热或红外成像系统。 冷屏和焦平面阵列位于杜瓦内。 镜子在焦平面阵列处引导所需的光束。 后向反射器附着在光学镜筒的内部。 后向反射器被布置成使得后向反射器存在于焦平面阵列的所有视线中，除了与外部停止相关联的视线外。 因此，后向反射器不会干扰聚焦在焦平面阵列上的期望的光束。 然而，被聚焦的所有光都被防反射器抵达焦平面阵列。 后向反射器是布置在矩阵中的红外后向反射器。 每个后向反射器是具有低发射率反射面的“凹”角立方体。 角落立方体将入射光线相对于入射光线的输入角反射180度。 因此，焦平面阵列仅在期望的光束外部看到冷。

公开(公告)号：US5111050A

公开(公告)日：1992-05-05

申请号：US621419

申请日：1990-12-03

Applicant: Nevil Q. Maassen ,  Timothy S. Romano ,  Leonard E. Peck

Inventor： Nevil Q. Maassen ,  Timothy S. Romano ,  Leonard E. Peck

IPC: G01J1/02 ,  F25D19/00 ,  G01J5/02 ,  G01J5/06 ,  G01J5/28 ,  H01L31/024

CPC classification number: H01L31/024 ,  F25D19/006 ,  G01J5/061 ,  F25D2400/28

Abstract: A radiation detector assembly (20) includes a radiation detector (2), a silicon readout device (3) coupled to the radiation detector, and a platform 13 for supporting from a first major surface (13a) the readout device and the radiation detector. A second major surface (13b) includes a boss (14) for coupling, via an active brazing operation, to a cryogenic cooler. The platform is monolithic structure comprised of aluminum nitride (AlN) and eliminates at least one adhesive joint found in the prior art. AlN is selected because of its inherent material properties including a higher thermal diffusivity, relative to typical ceramic materials, for providing a reduced cooldown time of the detector to cryogenic temperatures. AlN also has a 300K- 77K thermal contraction characteristic that closely matches that of the silicon readout device and a high modulus of elasticity, thereby reducing distortion of the readout device thus minimizing stresses on indium bump interconnects. AlN also has dielectric characteristics that permit thin film metalization of the surface (13a) for providing electrical signal distribution.

公开(公告)号：US5091646A

公开(公告)日：1992-02-25

申请号：US529933

申请日：1990-05-29

Applicant: William H. Taylor

Inventor： William H. Taylor

IPC: G01J5/48 ,  G01J5/06 ,  G01J5/08 ,  G01J5/28 ,  H04N3/09 ,  H04N5/232 ,  H04N5/33

CPC classification number: G01J5/08 ,  G01J5/061 ,  G01J5/0806 ,  H04N3/09 ,  H04N5/33 ,  G01J2005/065 ,  G01J2005/283

Abstract: A totally integrated thermal imaging system has a dewar housing including imaging optics, a scanning mirror and a curved detector array. The imaging optics constitute a meniscus lens and a spherical focusing mirror. The scanning mirror scans the image, and the spherical mirror focuses the scanned image onto the detector array. The meniscus lens advantageously corrects aberrations. A detector support provides access for cryogenic cooling of the detector, and individual cold shielding of the detector elements is made possible by the telecentricity of the optics. Processing electronics, at least a portion of which may also be disposed on the detector support, process the detector signals to display an image. The integrated structure advantageously eliminates any need for separate scanner, imager, detector dewar and electronics modules.

公开(公告)号：US4933555A

公开(公告)日：1990-06-12

申请号：US153574

申请日：1988-02-03

Applicant: Brian F. Smith

Inventor： Brian F. Smith

IPC: G01J5/00 ,  G01J5/06 ,  G01J5/28 ,  G01J5/52 ,  H04N5/33 ,  H04N5/365

CPC classification number: H04N5/33 ,  G01J5/061 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0831 ,  G01J5/522 ,  H04N5/3653 ,  G01J2005/0048 ,  G01J2005/0077 ,  G01J2005/526 ,  G01J2005/528

Abstract: A thermal imager including a cryogenically cooled detector element array and a scanning element has an optical system with a field of view limited by a field stop (2). A retroreflective region (6) is provided on part of the field stop to act as a temperature reference by allowing the detector array to "look at" itself. A second, different temperature reference (5) is provided on another part of the field stop and the two references are used to equalize and adjust the output characteristics of the elements in the detector array.

公开(公告)号：US4930134A

公开(公告)日：1990-05-29

申请号：US361364

申请日：1989-06-05

Applicant: Anthony F. Macaione ,  John V. Wright

Inventor： Anthony F. Macaione ,  John V. Wright

IPC: G01J5/28 ,  G01K7/01 ,  H01L31/10 ,  H01S3/131 ,  H01S5/068 ,  H01S5/0683

CPC classification number: H01S5/0683 ,  G01K7/01 ,  H01S5/06804

Abstract: A precision temperature sensor is set forth. The sensor is a photosensitive device. Variations in temperature of the light sensitive device cause changes in the voltage across the light sensitive device. The voltage can be measured in microvolts corresponding to fractions of a degree change, and is linear with change in temperature.

Abstract translation: 阐述了精密温度传感器。 传感器是光敏装置。 光敏装置的温度变化引起光敏装置两端的电压变化。 电压可以以对应于度变化的分数的微伏进行测量，并且随着温度的变化是线性的。

公开(公告)号：US4922116A

公开(公告)日：1990-05-01

申请号：US370109

申请日：1989-06-21

Applicant: Jan Grinberg ,  Murray S. Welkowsky

Inventor： Jan Grinberg ,  Murray S. Welkowsky

IPC: G01J1/02 ,  G01J5/02 ,  G01J5/10 ,  G01J5/12 ,  G01J5/20 ,  G01J5/22 ,  G01J5/28 ,  G01J5/52 ,  H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H01L31/16 ,  H01L33/00 ,  H01L35/28

CPC classification number: G01J5/10 ,  G01J5/20 ,  G01J5/22 ,  G01J5/522 ,  H01L27/1465

Abstract: An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.

Abstract translation: 公开了一种红外（IR）模拟器，其中像素阵列通过电阻器桥限定在绝缘衬底上，电阻器桥在间隔开的位置处接触衬底，并且在接触位置之间与衬底分离，从而与衬底隔离。 衬底上的半导体驱动电路响应于输入控制信号使期望的电流流过电阻器桥，从而从每个像素建立适当的红外辐射。 驱动电路以及至少一些电引线优选位于电阻桥下。 每个桥下的热反射器屏蔽驱动电路并反射辐射以增强IR输出。 驱动电路采用产生基本上无闪烁操作的采样和保持电路，其中电阻器桥与它们各自的驱动电路阻抗匹配。 可以通过用具有期望特性的电阻层涂覆绝缘基桥来形成电阻器桥，并用热发射材料覆盖电阻层。 阵列优选形成在蓝宝石（SOS）硅晶片上。 也可以形成电磁辐射桥接检测器阵列，其中桥具有电阻器，热电偶或肖特基结结构。

公开(公告)号：US4862002A

公开(公告)日：1989-08-29

申请号：US200245

申请日：1988-05-31

Applicant: Samuel C. Wang ,  David N. Ludington

Inventor： Samuel C. Wang ,  David N. Ludington

IPC: G01J5/06 ,  G01J5/28 ,  H01L31/024 ,  H04N5/33

CPC classification number: G01J5/28 ,  H01L31/024 ,  H04N5/33 ,  G01J2005/283 ,  G01J5/061

Abstract: The invention relates to a multiple channel readout circuit optimized for a cryogenically operated IR sensor head. The circuit is applicable to the individual channel preamplifiers of a charge injection device (CID) IR sensor. Since the thermal leakage must be minimized, the voltages on the principal current supply path to the individual preamplifiers will vary when a strong signal is present on any channel. Crosstalk is avoided by using a four transistor cascode preamplifier circuit having a source follower output, in which the gate of the transistor, which acts as a load to the two cascoded transistors, is isolated from the drain of the load transistor, connected to a gate load node common to the other channels, and the node connected via a single connection of high thermal impedance to a terminal external to the cryogenic environment, at which filtering may be provided as needed.

Abstract translation: 本发明涉及针对低温操作的红外传感器头优化的多通道读出电路。 该电路适用于电荷注入装置（CID）IR传感器的各个通道前置放大器。 由于热泄漏必须最小化，当任何通道上存在强信号时，各个前置放大器的主电流供应通路上的电压将会发生变化。 通过使用具有源极跟随器输出的四晶体管共源共栅前置放大器电路来避免串扰，其中用作两个级联光电晶体管的负载的晶体管的栅极与连接到栅极的负载晶体管的漏极隔离 其他通道共用的负载节点，以及通过高热阻抗的单个连接连接到低温环境外部的终端的节点，根据需要可以提供过滤。

公开(公告)号：US4827130A

公开(公告)日：1989-05-02

申请号：US111832

申请日：1987-10-22

Applicant: Charles W. Reno

Inventor： Charles W. Reno

IPC: G01J5/08 ,  G01J5/28 ,  G02B13/14 ,  G02B23/12 ,  G01J1/42

CPC classification number: G02B13/22 ,  G01J5/061 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/28 ,  G02B13/14 ,  G02B23/12 ,  G01J2005/283

Abstract: An infrared imager includes an array of imager elements. Infrared radiation is focussed onto the array by a lens assembly including a plurality of lens elements. The imager array and the lens are within a cold box which includes an infrared-transparent window. For low noise, a spectrum-limiting filter is also located within the cold box, between the lens assembly and the window, at or within the pupil relief distance of the lens assembly. The pupil relief distance is extended by the use of at least one aspheric surface for one of the lens elements of the lens assembly. The mounting structure of the filter is the aperture stop for the infrared imager. The field of view may be reduced, if desired, without significant effect on the noise performance by use of a telescope including a second lens assembly optically identical to the first lens assembly, operated in conjunction with a confocal large-diameter lens assembly.

Abstract translation: 红外成像仪包括一组成像元件。 通过包括多个透镜元件的透镜组件将红外辐射聚焦到阵列上。 成像器阵列和透镜在包括红外透明窗的冷箱内。 对于低噪声，频谱限制滤波器也位于透镜组件和瞳孔释放距离之间或之内的冷盒中，在透镜组件和窗口之间。 通过使用透镜组件的透镜元件中的一个的至少一个非球面来延长光瞳释放距离。 过滤器的安装结构是红外成像仪的孔径光阑。 如果需要，可以通过使用包括与第一透镜组件光学相同的第二透镜组件的望远镜结合共焦大直径透镜组件来操作，可以减少视场，而不会对噪声性能产生显着影响。