公开(公告)号：US09752074B2

公开(公告)日：2017-09-05

申请号：US14702020

申请日：2015-05-01

Applicant: Enthone Inc.

Inventor： Mark Peter Schildmann ,  Ulrich Prinz ,  Christoph Werner

IPC: C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  C09K13/00 ,  C09K13/04 ,  B44C1/22 ,  C08J7/14 ,  C23C18/24

CPC classification number: C09K13/04 ,  B44C1/227 ,  C08J7/14 ,  C08J2355/02 ,  C23C18/24

Abstract: A pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the pickling solution is substantially free of chromium (VI) ions, alkali ions, and alkaline-earth ions.

公开(公告)号：US20170029972A1

公开(公告)日：2017-02-02

申请号：US15291340

申请日：2016-10-12

Applicant: Enthone Inc.

Inventor： Vincent Paneccasio, JR. ,  Richard Hurtubise ,  Xuan Lin ,  Paul Figura

IPC: C25D7/12 ,  H01L21/768 ,  H01L21/288 ,  C25D3/38 ,  C25D17/00

CPC classification number: C25D7/123 ,  C25D3/38 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76877 ,  H01L21/76879

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a a quaternized pyridinium salt compound for leveling.

Abstract translation: 一种用于在制造包含含有Cu离子源的电子器件的微电子器件和用于流平的季铵化吡啶鎓盐化合物的制造中将Cu电镀到衬底上的方法和组合物。

公开(公告)号：US20160254156A1

公开(公告)日：2016-09-01

申请号：US15148738

申请日：2016-05-06

Applicant: Enthone Inc.

Inventor： Thomas B. Richardson ,  Joseph A. Abys ,  Wenbo Shao ,  Chen Wang ,  Vincent Paneccasio ,  Cai Wang ,  Xuan Lin ,  Theodore Antonellis

IPC: H01L21/288 ,  C25D5/18 ,  C25D7/12 ,  C25D5/02 ,  H01L21/768 ,  C25D3/38

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/02 ,  C25D5/18 ,  C25D7/123 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract translation: 一种用于在半导体集成电路器件中通过硅通孔特征进行金属化的工艺，该过程包括在填充周期期间使电路的极性反转一段间隔以在所述金属化衬底处产生阳极电位，并从铜表面解吸整齐器 通孔，然后通过重新建立通孔内的铜的表面作为电路中的阴极来恢复铜沉积，由此产生铜填充的通孔特征。

公开(公告)号：US09249513B2

公开(公告)日：2016-02-02

申请号：US14630268

申请日：2015-02-24

Applicant: ENTHONE INC.

Inventor： Franz-Josef Stark ,  Christoph Werner

IPC: C23C18/34 ,  C23C18/36 ,  C23C18/40 ,  C23C18/44 ,  C23C18/50 ,  C07C229/08 ,  C07C229/12 ,  C07C229/16 ,  C07C229/22 ,  C07C237/06 ,  C07C309/14 ,  C23C18/16 ,  C23C18/31 ,  C23C18/32 ,  C23C18/38 ,  C23C18/42 ,  C23C18/48

CPC classification number: C23C18/44 ,  C07C229/08 ,  C07C229/12 ,  C07C229/16 ,  C07C229/22 ,  C07C237/06 ,  C07C309/14 ,  C23C18/1601 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/36 ,  C23C18/38 ,  C23C18/40 ,  C23C18/42 ,  C23C18/48 ,  C23C18/50

Abstract: A plating formulation for the electroless deposition of a metal layer on a substrate, wherein a β-amino acid and/or β-amino acid derivative is used as a stabilizer. The β-amino acid is present within a range of 1 mg/L to 2 g/L. Typically, the electrolyte is free of heavy metal stabilizers, cyanides, selenium compounds and sulfur compounds comprising sulfur in an oxidation state between −2 and +5. The inventive plating formulation can comprise 3-aminopropionic acid, 3-aminobutyric acid, 3-amino-4-methylvaleric acid, and 2-aminoethane-sulfonic acid.

Abstract translation: 用于在基底上无电沉积金属层的电镀配方，其中使用“ - 氨基酸和/或” - 氨基酸衍生物作为稳定剂。 β-氨基酸存在于1mg / L至2g / L的范围内。 通常，电解质不含重金属稳定剂，氰化物，硒化合物和包含-2和+5之间氧化态的硫的硫化合物。 本发明的电镀制剂可以包含3-氨基丙酸，3-氨基丁酸，3-氨基-4-甲基戊酸和2-氨基乙磺酸。

公开(公告)号：US20160024381A1

公开(公告)日：2016-01-28

申请号：US14702020

申请日：2015-05-01

Applicant: Enthone Inc.

Inventor： Mark Peter Schildmann ,  Ulrich Prinz ,  Christoph Werner

IPC: C09K13/04

CPC classification number: C09K13/04 ,  B44C1/227 ,  C08J7/14 ,  C08J2355/02 ,  C23C18/24

Abstract: A pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the pickling solution is substantially free of chromium (VI) ions, alkali ions, and alkaline-earth ions.

Abstract translation: 用于表面预处理塑料表面以用于金属化的酸洗溶液，该溶液包含Mn（VII）离子源; 和无机酸; 其中所述酸洗溶液基本上不含铬（VI）离子，碱离子和碱土离子。

公开(公告)号：US20150167175A1

公开(公告)日：2015-06-18

申请号：US14630268

申请日：2015-02-24

Applicant: ENTHONE INC.

Inventor： Franz-Josef Stark ,  Christoph Werner

IPC: C23C18/44 ,  C23C18/40 ,  C23C18/34

CPC classification number: C23C18/44 ,  C07C229/08 ,  C07C229/12 ,  C07C229/16 ,  C07C229/22 ,  C07C237/06 ,  C07C309/14 ,  C23C18/1601 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/36 ,  C23C18/38 ,  C23C18/40 ,  C23C18/42 ,  C23C18/48 ,  C23C18/50

Abstract: A plating formulation for the electroless deposition of a metal layer on a substrate, wherein a β-amino acid and/or β-amino acid derivative is used as a stabilizer. The β-amino acid is present within a range of 1 mg/L to 2 g/L. Typically, the electrolyte is free of heavy metal stabilizers, cyanides, selenium compounds and sulfur compounds comprising sulfur in an oxidation state between −2 and +5. The inventive plating formulation can comprise 3-aminopropionic acid, 3-aminobutyric acid, 3-amino-4-methylvaleric acid, and 2-aminoethane-sulfonic acid.

Abstract translation: 用于在基底上无电沉积金属层的电镀配方，其中使用“ - 氨基酸和/或” - 氨基酸衍生物作为稳定剂。 β-氨基酸存在于1mg / L至2g / L的范围内。 通常，电解质不含重金属稳定剂，氰化物，硒化合物和包含-2和+5之间氧化态的硫的硫化合物。 本发明的电镀制剂可以包含3-氨基丙酸，3-氨基丁酸，3-氨基-4-甲基戊酸和2-氨基乙磺酸。

公开(公告)号：US20140102909A1

公开(公告)日：2014-04-17

申请号：US14108954

申请日：2013-12-17

Applicant: Enthone Inc.

Inventor： Vincent Paneccasio, JR. ,  Richard Hurtubise ,  Xuan Lin ,  Paul Figura

IPC: C25D3/38

CPC classification number: C25D7/123 ,  C25D3/38 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76877 ,  H01L21/76879

Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.

Abstract translation: 一种用于在制造包含含有Cu离子源的电子装置和用于流平的季铵化吡啶鎓盐化合物的电解溶液的制造中将Cu电镀到基底上的方法和组合物。

公开(公告)号：US20040144285A1

公开(公告)日：2004-07-29

申请号：US10678601

申请日：2003-10-03

Applicant: Enthone Inc.

Inventor： Franz-Josef Stark ,  Helmut Horsthemke ,  Ulrich Treuner

IPC: C23C018/52 ,  C23C018/34 ,  C23C018/36 ,  C23C018/40 ,  C23C018/44

CPC classification number: C23C18/36 ,  C23C18/1617 ,  C23C18/1662

Abstract: The invention concerns an electrolyte for electroless deposition of metal layers with internal compressive stresses containing a metal base salt, a reducing agent, a complexing agent, an accelerator and a stabilizer. In order to make available an electrolyte of the said kind, from which uniform pore-free and crack-free metal-phosphorus coatings can be deposited with constant layers properties and high phosphorus contents at an elevated deposition rate over a long period of time, it is proposed by means of the invention that the electrolyte contain as metal base salt a metal salt whose anions contain at least one carbon atom and that is present in a starting concentration from 0.01 to 0.3 mol/L. At least one salt consisting of metal acetate, metal formate, metal oxalate, metal propionate, metal citrate and metal ascorbate, especially preferably metal acetate, is used as the metal salt whose anion contains at least one carbon atom. In addition, a method that is especially suitable for the use of the said electrolyte is proposed, where this method advantageously has a closed material circulation. Through the use of the invention especially pore-free and crack-free metal coatings with constant layer properties are uniformly deposited over a long time of use of the bath of at least 14-22 MTO.

Abstract translation: 本发明涉及一种用于无电沉积具有含有金属碱盐，还原剂，络合剂，促进剂和稳定剂的内部压应力的金属层的电解质。 为了提供所述种类的电解质，可以在较长的时间内以升高的沉积速率沉积具有恒定层性质和高磷含量的均匀无孔隙和无裂纹的金属 - 磷涂层， 通过本发明提出，电解质含有阴离子含有至少一个碳原子并且以0.01至0.3mol / L的起始浓度存在的金属盐作为金属碱盐。 使用由金属乙酸盐，金属甲酸盐，金属草酸盐，金属丙酸盐，金属柠檬酸盐和金属抗坏血酸盐，特别优选金属乙酸盐组成的至少一种盐作为阴离子含有至少一个碳原子的金属盐。 此外，提出了特别适用于所述电解质的方法，其中该方法有利地具有封闭的材料循环。 通过使用本发明，特别是具有恒定层性质的无孔和无裂纹金属涂层在使用至少14-22MTO的浴的长时间内均匀沉积。

公开(公告)号：US12270121B2

公开(公告)日：2025-04-08

申请号：US17416703

申请日：2020-01-31

Applicant: MacDermid Enthone Inc.

Inventor： Eric Yakobson ,  Shaopeng Sun ,  Elie Najjar ,  Thomas Richardson ,  Vincent Paneccasio, Jr. ,  Wenbo Shao ,  Kyle Whitten

IPC: C25D3/18 ,  C25D5/02 ,  C25D7/12 ,  C25D21/10 ,  H01L21/288 ,  H01L21/768

Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.

公开(公告)号：US11746433B2

公开(公告)日：2023-09-05

申请号：US16674052

申请日：2019-11-05

Applicant: MacDermid Enthone Inc.

Inventor： Donald Desalvo ,  Ron Blake ,  Carmichael Gugliotti ,  William J. Decesare ,  Richard Bellemare

IPC: C25D3/38 ,  H05K3/42 ,  H05K1/18 ,  H05K1/02 ,  C25D5/18 ,  H05K7/20 ,  C25D7/00 ,  C25D5/02

CPC classification number: C25D3/38 ,  C25D5/02 ,  C25D5/18 ,  C25D7/00 ,  H05K1/0206 ,  H05K1/181 ,  H05K3/423 ,  H05K3/424 ,  H05K7/20154 ,  H05K2203/0789 ,  H05K2203/1492

Abstract: A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at one or more through-holes and/or one or more micro-vias by contacting the electronic substrate with an acid copper electroplating solution. The acid copper plating solution comprises a source of copper ions; sulfuric acid; a source of chloride ions; a brightener; a wetter; and a leveler. The acid copper electroplating solution plates the one or more through-holes and/or the one or more micro-vias until metallization is complete.