Abstract:
A method of selectively plating without plating lines is provided. The method employs a loading plate having a metalized temporary conductive layer. The loading plate and the temporary conductive layer are adapted for transmitting a plating current. A patterning photoresist layer is accorded for selectively and sequentially plating a separating metal layer, a plating protection layer, and a connection pad layer on to the temporary conductive layer. Then, the loading plate is further used for supplying current to form other circuit layers by a pressing lamination process. And when the plate process is completed or it is not need to plate, the loading plate and the temporary conductive layer can be removed, for further completing for example the solder mask process, and thus achieving the objective of plating without plating lines.
Abstract:
A high-density fine line structure mainly includes: two boards with similar structures and a dielectric film for combing the two boards. Semiconductor devices respectively in two boards are opposite to each other after the two boards are combined. The two boards each include a fine line circuit, an insulated layer on the same surface, and the semiconductor device installed above the fine line circuit. The surface of the circuit, which is not covered by a solder mask, is made into a pad. The pad is filled with the tin balls for electrically connecting with another semiconductor device. Electroplating rather than the etching method is used for forming the fine line circuit layer, and a carrier and a metal barrier layer, which are needed during or at the end of the manufacturing process, are removed to increase the wiring density for realizing the object of high-density.
Abstract:
A high-density fine line structure mainly includes: two packaged semiconductor devices installed on a circuit layer and a power/ground layer formed therebetween, to realize the objective of high-density and ground connection. On an outer circuit, the part, which is not covered by a solder mask, can be made into a pad for electrically connecting with one of the semiconductor devices. The other semiconductor device may be installed on the fine line circuit layer. The fine line circuit layer, which is exposed, is to be a tin ball pad where a tin ball is filled. Electroplating rather than the etching method is used for forming the fine line circuit layer, and a carrier and a metal barrier layer, which are needed during or at the end of the manufacturing process, are removed to increase the wiring density for realizing the object of high-density.
Abstract:
A carrier board has a copper substrate, an insulating layer, a copper layer, multiple recesses and a metal circuit layer. The substrate has at least one through hole. The insulating layer is a layer of glue that is insulating, acid-resisting and high-temperature-resisting and is mounted in the at least one through hole and mounted on the substrate. The copper layer is mounted on the insulating layer. The recesses are formed in the copper layer and the insulating layer that is mounted on the substrate. The metal circuit layer is plated on copper layer and along the recesses to contact with the substrate. A heat from the metal circuit layer will transmit to the insulating layer by the copper layer and to the copper substrate. Thus, the carrier board has a heat-dissipating effect without combining with a dissipating apparatus, so LEDs packaged with the carrier board have a small dimension and are compact.
Abstract:
A method for fabricating an interlayer conducting structure of an embedded circuitry is disclosed. In accordance with the method for fabricating an interlayer conducting structure of an embedded circuitry of the present invention, there is no laser conformal mask formed prior to laminating the first and second lamination plates. Instead, after the first and second lamination plates are laminated, a laser boring process is directly conducted to form a via hole. In such a way, even when there is an offset between the first and the second lamination plates in alignment, the risk of short circuit between different layers of lamination plates can be lowered without improving an interlayer offset value.
Abstract:
A manufacturing method for mainly embedding the passive device structure in the printed circuit board is presented. In this structure, both the source electrode and the ground electrode of the passive device belong to the same level, and includes several source branches and several ground branches that are formed vertically on the inside of the dielectric layer of the circuit board which are connected, respectively, to avoid the conducting between the source electrode and the ground electrode during lamination. When it is in the form of the capacitor structure, through the use of the ultra-fine wiring technique, these source branches and ground branches are separated by a small gap between each other. Therefore, the side face area and quantities of the source branches and ground branches are both increased.
Abstract:
A method for fabricating an interlayer conducting structure of an embedded circuitry is disclosed. In accordance with the method for fabricating an interlayer conducting structure of an embedded circuitry of the present invention, there is no laser conformal mask formed prior to laminating the first and second lamination plates. Instead, after the first and second lamination plates are laminated, a laser boring process is directly conducted to form a via hole. In such a way, even when there is an offset between the first and the second lamination plates in alignment, the risk of short circuit between different layers of lamination plates can be lowered without improving an interlayer offset value.
Abstract:
A buried capacitor structure including a first conductive metal layer, a first dielectric film, a capacitor, a second dielectric film, and a second conductive metal layer, which are stacked in sequence, wherein the capacitor is buried between the first dielectric film and the second dielectric film, the first conductive metal layer is formed into a first circuit pattern, the second conductive metal layer is formed into a second circuit pattern. The capacitor is a planar comb-shaped capacitor with a positive electrode, a negative electrode, and a capacitor paste filled between the positive electrode and the negative electrode, wherein the positive electrode includes a positive electrode end and a plurality of positive comb branches, the negative electrode includes a negative electrode end and a plurality of negative comb branches, and the positive branches and the negative branches are parallel to and separated from each other.
Abstract:
A stack structure with copper bumps on an integrated circuit board is disclosed. The stack structure includes a plurality of insulating layers and a plurality of conductive layers which are stacked alternately. The uppermost conductive layer has copper bumps as copper pillar pins for soldering the chip pins of an integrated circuit chip. Because the copper bumps have a certain height, the distance between the copper bumps and the chip pins is shortened, and therefore the solders needed for soldering may be reduced. Also, the shape of the solders is a long strap instead of spheroid due to the cohesion force between the copper bump surfaces and the solders so that the distance between the solders is scaled down and the gaps between the pins are reduced. Thus, the entire size of the integrated circuit board may also be miniatured.
Abstract:
A method for fabricating a component-embedded PCB includes: providing a carrier plate having a plating metal layer plated thereon; disposing an electronic component on the plating metal layer of the carrier plate; laminating a metal layer onto the plating metal layer having the electronic component disposed thereon and the carrier plate by a dielectric film; removing the carrier plate and exposing the plating metal layer; and patterning at least one of the metal layer and the plating metal layer to be a circuit layer.