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    PROCESSING CHAMBER, ASSEMBLY AND A METHOD
    31.
    发明公开
    PROCESSING CHAMBER, ASSEMBLY AND A METHOD 审中-公开

    公开(公告)号：US20230170187A1

    公开(公告)日：2023-06-01

    申请号：US18059479

    申请日：2022-11-29

    Applicant: ASM IP Holding, B.V.

    Inventor： Antti Niskanen

    IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458

    CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45544 ,  C23C16/4584 ,  H01J37/32715 ,  C23C16/45536 ,  H01J2237/3321 ,  H01J2237/3341

    Abstract: The current disclosure relates to a semiconductor processing chamber comprising a showerhead, the showerhead comprising a showerplate for providing a reactant into the processing chamber. The processing chamber further comprises a moveable susceptor for holding a substrate; wherein the processing chamber has a showerplate axis extending vertically through the showerplate; a substrate axis extending vertically at a position at which the center of the substrate is configured and arranged to be during providing reactant into the processing chamber; and wherein the substrate axis is offset from the showerhead axis. The disclosure further relates to a semiconductor processing assembly and to a method of treating a semiconductor substrate.

    TRANSITION METAL DEPOSITION METHOD
    34.
    发明申请
    TRANSITION METAL DEPOSITION METHOD 有权

    公开(公告)号：US20220195599A1

    公开(公告)日：2022-06-23

    申请号：US17554009

    申请日：2021-12-17

    Applicant: ASM IP Holding B.V.

    Inventor： Charles Dezelah ,  Jan Willem Maes ,  Elina Färm ,  Saima Ali ,  Antti Niskanen

    IPC: C23C16/455 ,  C23C16/18 ,  C23C16/54

    Abstract: The current disclosure relates to methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

    METHODS FOR FORMING SILICON NITRIDE THIN FILMS
    39.
    发明申请
    METHODS FOR FORMING SILICON NITRIDE THIN FILMS 审中-公开
    形成氮化硅薄膜的方法

    公开(公告)号：US20140273527A1

    公开(公告)日：2014-09-18

    申请号：US13798285

    申请日：2013-03-13

    Applicant: ASM IP HOLDING B.V.

    Inventor： Antti Niskanen ,  Suvi Haukka ,  Jaakko Anttila

    IPC: H01L21/02

    CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

    Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

    Abstract translation: 本发明涉及通过等离子体增强原子层沉积（PEALD）在反应室中的衬底上形成氮化硅薄膜的方法。 示例性方法包括以下步骤：（i）将八卤代三硅烷Si 3 X 8硅前体如八氯三硅烷（OCTS）Si 3 Cl 8引入到含有底物的反应空间中，（ii）将含氮等离子体引入反应空间，并且其中步骤 ），（ii）和其间的任何步骤构成一个循环，并重复所述循环多次，直到获得具有所需厚度的原子层氮化物膜。

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