公开(公告)号：US20220216105A1

公开(公告)日：2022-07-07

申请号：US17700635

申请日：2022-03-22

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US20210343580A1

公开(公告)日：2021-11-04

申请号：US17379240

申请日：2021-07-19

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu

IPC: H01L21/768 ,  H01L21/02

Abstract: A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.

公开(公告)号：US20210313182A1

公开(公告)日：2021-10-07

申请号：US17350281

申请日：2021-06-17

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Qi Xie

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02

Abstract: There is provided a method of forming a layer, comprising depositing a seed layer on the substrate and depositing a bulk layer on the seed layer. Depositing the seed layer comprises supplying a first precursor comprising metal and halogen atoms to the substrate; and supplying a first reactant to the substrate. Depositing the bulk layer comprises supplying a second precursor comprising metal and halogen atoms to the seed layer and supplying a second reactant to the seed layer.

公开(公告)号：US20210123128A1

公开(公告)日：2021-04-29

申请号：US17078119

申请日：2020-10-23

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu

IPC: C23C14/00 ,  C23C14/34 ,  C23C14/54

Abstract: There is disclosed apparatus and processes for the uniform controlled growth of materials on a substrate which direct a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate. Each pulsed flow is a combination of a first pulsed subflow and a second pulsed subflow, wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latter half of a pulse profile of the first pulsed subflow.

公开(公告)号：US10529563B2

公开(公告)日：2020-01-07

申请号：US15917262

申请日：2018-03-09

Applicant: ASM IP Holding B.V.

Inventor： Tom Blomberg ,  Chiyu Zhu

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/40 ,  C23C16/455

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

公开(公告)号：US10280519B2

公开(公告)日：2019-05-07

申请号：US15835262

申请日：2017-12-07

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20190067094A1

公开(公告)日：2019-02-28

申请号：US16105802

申请日：2018-08-20

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  C23C16/02 ,  C23C16/14

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US10121699B2

公开(公告)日：2018-11-06

申请号：US15432263

申请日：2017-02-14

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532 ,  H01L21/283

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US09859151B1

公开(公告)日：2018-01-02

申请号：US15205890

申请日：2016-07-08

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/7682 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02175 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/76832

Abstract: A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.

公开(公告)号：US20170117141A1

公开(公告)日：2017-04-27

申请号：US14919536

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Timo Asikainen ,  Robert Brennan Milligan

IPC: H01L21/02 ,  H01L29/51

CPC classification number: H01L29/4966 ,  C23C16/045 ,  C23C16/32 ,  C23C16/45531 ,  C23C16/45536 ,  H01L21/02194 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/78

Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.