公开(公告)号：US11049722B2

公开(公告)日：2021-06-29

申请号：US16841625

申请日：2020-04-06

Applicant: Applied Materials, Inc.

Inventor： Siddarth Krishnan ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Paul F. Ma

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/51 ,  H01L21/285 ,  H01L29/40 ,  H01L29/49 ,  H01L21/02 ,  H01L29/423

Abstract: Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

公开(公告)号：US10373823B2

公开(公告)日：2019-08-06

申请号：US15994409

申请日：2018-05-31

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. Srinivasan ,  Atashi Basu ,  Pramit Manna ,  Khokan C. Paul ,  Diwakar N. Kedlaya

IPC: C23C16/24 ,  C23C16/56 ,  H01L21/3105 ,  C23C16/30 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  H01L21/321

Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.

公开(公告)号：US20190019874A1

公开(公告)日：2019-01-17

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L29/49 ,  H01L21/28

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US20180218914A1

公开(公告)日：2018-08-02

申请号：US15880671

申请日：2018-01-26

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/285 ,  H01L21/321 ,  H01L21/02

CPC classification number: H01L21/28562 ,  H01L21/02205 ,  H01L21/0226 ,  H01L21/02277 ,  H01L21/32 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76849 ,  H01L21/76885

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.