公开(公告)号：US11640109B2

公开(公告)日：2023-05-02

申请号：US17157096

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal ,  Azeddine Zerrade ,  Ramya Ramalingam

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.

公开(公告)号：US11556053B2

公开(公告)日：2023-01-17

申请号：US17157088

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

公开(公告)号：US20220350233A1

公开(公告)日：2022-11-03

申请号：US17306065

申请日：2021-05-03

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/22

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise an absorber layer comprising a material selected from the group consisting of ruthenium (Ru) and one or more elements of Group 1, Ru and one or more elements of Group 1 and one or more elements of Group 2, Ru and one or more elements of Group 1 and tantalum (Ta), Ru and one or more elements of Group 1 and Ta and one or more elements of Group 2, tellurium (Te) and nickel (Ni), and tellurium (Te) and aluminum (Al).

公开(公告)号：US20220252971A1

公开(公告)日：2022-08-11

申请号：US17666733

申请日：2022-02-08

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a trilayer on the second side of the substrate, the trilayer including a first layer on the second side of the substrate, a second layer on the first layer and a third layer on the second layer. In some embodiments, separately from or in addition to the trilayer the mask blank includes an etch stop layer between the absorber layer and the capping layer, and there is a hard mask layer on the absorber layer.

公开(公告)号：US20220221786A1

公开(公告)日：2022-07-14

申请号：US17708593

申请日：2022-03-30

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G02B5/08 ,  G03F7/20

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US11300871B2

公开(公告)日：2022-04-12

申请号：US16861788

申请日：2020-04-29

Applicant: Applied Materials, Inc.

Inventor： Shiyu Liu ,  Shuwei Liu ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/60 ,  G03F1/58

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.

公开(公告)号：US11249390B2

公开(公告)日：2022-02-15

申请号：US16777198

申请日：2020-01-30

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal ,  Halbert Chong

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium, germanium and antimony.

公开(公告)号：US11194244B2

公开(公告)日：2021-12-07

申请号：US16720520

申请日：2019-12-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Chang Ke ,  Wen Xiao ,  Vibhu Jindal

IPC: G03F1/22 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.

公开(公告)号：US20210302826A1

公开(公告)日：2021-09-30

申请号：US17209707

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Azeddine Zerrade ,  Vibhu Jindal

IPC: G03F1/58 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate,; a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.

公开(公告)号：US20210232039A1

公开(公告)日：2021-07-29

申请号：US17152068

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.