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公开(公告)号：US09981843B2
公开(公告)日：2018-05-29
申请号：US15138313
申请日：2016-04-26
Applicant: Infineon Technologies AG
Inventor： Dominic Maier , Alfons Dehe , Thomas Kilger , Markus Menath , Franz Xaver Muehlbauer , Daniel Porwol , Juergen Wagner
CPC classification number: B81C1/00896 , B81C1/00269 , B81C1/00801 , B81C2201/0194 , B81C2201/053
Abstract: A method of producing a chip package is described. A plurality of chips is provided on a first wafer. Each chip has a cavity which opens to a first main face of the chip. The cavities are filled or covered temporarily. The chips are then singulated. The singulated chips are embedded in an encapsulation material, and then the cavities are re-exposed.
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公开(公告)号：US09938140B2
公开(公告)日：2018-04-10
申请号：US15206836
申请日：2016-07-11
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stephan Pindl , Bernhard Knott , Carsten Ahrens
CPC classification number: B81C1/00825 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81C1/00873 , B81C2201/017 , B81C2201/053 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
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公开(公告)号：US20170297899A1
公开(公告)日：2017-10-19
申请号：US15629834
申请日：2017-06-22
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Ulrich Krumbein , Wolfgang Friza , Wolfgang Klein
CPC classification number: B81B3/0072 , B81B2203/0109 , B81C1/00325
Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.
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公开(公告)号：US20170260040A1
公开(公告)日：2017-09-14
申请号：US15066741
申请日：2016-03-10
Applicant: Infineon Technologies AG
Inventor： Arnaud Walther , Alfons Dehe , Johann Strasser , Gerhard Metzger-Brueckl
CPC classification number: B81B3/0086 , B81B2201/0257 , B81B2203/0127 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003
Abstract: In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.
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公开(公告)号：US20170247245A1
公开(公告)日：2017-08-31
申请号：US15054310
申请日：2016-02-26
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Ulrich Krumbein , Wolfgang Friza , Wolfgang Klein
CPC classification number: B81B3/0072 , B81B2203/0109 , B81C1/00325
Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.
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Patent Agency Ranking
公开(公告)号：US09745188B1
公开(公告)日：2017-08-29
申请号：US15054310
申请日：2016-02-26
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Ulrich Krumbein , Wolfgang Friza , Wolfgang Klein
CPC classification number: B81B3/0072 , B81B2203/0109 , B81C1/00325
Abstract: A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.
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公开(公告)号：US09714988B2
公开(公告)日：2017-07-25
申请号：US14514415
申请日：2014-10-15
Applicant: Infineon Technologies AG
Inventor： Markus Eckinger , Stefan Kolb , Alfons Dehe , Guenther Ruhl
CPC classification number: G01R33/072 , G01R33/0052 , H01L27/092 , H01L43/065 , H01L43/14
Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.
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38.发明授权System and method for packaged MEMS device having embedding arrangement, MEMS die, and grille 有权具有嵌入布置，MEMS模具和格栅的封装MEMS器件的系统和方法公开(公告)号：US09584889B2
公开(公告)日：2017-02-28
申请号：US14011566
申请日：2013-08-27
Applicant: Infineon Technologies AG
Inventor： Irmgard Escher-Poeppel , Edward Fuergut , Alfons Dehe
CPC classification number: H04R1/021 , H04R1/086 , H04R19/005 , H04R31/006 , H04R2201/003 , H04R2201/02 , H04R2231/003
Abstract: A packaged MEMS device may include an embedding arrangement, a MEMS device disposed in the embedding arrangement, a sound port disposed in the embedding arrangement and acoustically coupled to the MEMS device, and a grille within the sound port. Some embodiments relate to a sound transducer component including an embedding material and a substrate-stripped MEMS die embedded into the embedding material. The MEMS die may include a diaphragm for sound transduction. The sound transducer component may further include a sound port within the embedding material in fluidic or acoustic contact with the diaphragm. Further embodiments relate to a method for packaging a MEMS device or to a method for manufacturing a sound transducer component.
Abstract translation: 封装的MEMS器件可以包括嵌入布置，布置在嵌入布置中的MEMS器件，布置在嵌入布置中并声耦合到MEMS器件的声音端口和声音端口内的格栅。 一些实施例涉及包括嵌入材料和嵌入到嵌入材料中的剥离衬底的MEMS芯片的声音传感器部件。 MEMS管芯可以包括用于声音传导的隔膜。 声音传感器组件还可以包括与隔膜流体或声学接触的嵌入材料内的声音端口。 另外的实施例涉及用于封装MEMS装置的方法或用于制造声换能器部件的方法。
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公开(公告)号：US09570659B2
公开(公告)日：2017-02-14
申请号：US14052962
申请日：2013-10-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss , Dirk Meinhold
Abstract: A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter structure is configured to emit infrared light with an emitter frequency distribution. Further, the lateral filter structure is configured to filter the infrared light emitted by the lateral emitter structure so that frequency-adjusted infrared light is provided with an adjusted frequency distribution. The frequency range of the adjusted frequency distribution is narrower than a frequency range of the emitter frequency distribution. Further, a lateral air gap is located between the lateral emitter structure and the lateral filter structure.
Abstract translation: 用于发射频率调节的红外光的半导体器件包括侧向发射极结构和侧向滤波器结构。 横向发射极结构被配置为发射具有发射极频率分布的红外光。 此外，横向滤波器结构被配置为对由横向发射器结构发射的红外光进行滤波，使得频率调节的红外光具有调整的频率分布。 调整频率分布的频率范围比发射体频率分布的频率范围窄。 此外，横向气隙位于横向发射器结构和侧向过滤器结构之间。
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公开(公告)号：US09513261B2
公开(公告)日：2016-12-06
申请号：US14052959
申请日：2013-10-14
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss
CPC classification number: G01N29/2425 , G01N21/1702 , G01N29/2418 , G01N29/30 , G01N2021/1704 , G01N2291/021
Abstract: A photoacoustic gas sensor device for analyzing gas includes an emitter module and a pressure-sensitive module. The emitter module is arranged on a carrier substrate and emits light pulses. The pressure-sensitive module is arranged on the carrier substrate within a reference gas volume. The reference gas volume is separated from a volume intended to be filled with a gas to be analyzed. Further, the pressure-sensitive module generates a sensor signal indicating information on an acoustic wave caused by light pulses emitted by the emitter module interacting with a reference gas within the reference gas volume. Additionally, the emitter module is arranged so that light pulses emitted by the emitter module reach the reference gas volume after crossing the volume intended to be filled with the gas to be analyzed.
Abstract translation: 用于分析气体的光声气体传感器装置包括发射器模块和压敏模块。 发射器模块布置在载体衬底上并发射光脉冲。 压敏模块布置在载体基板上的参考气体体积内。 将参考气体体积与要被分析的气体填充的体积分离。 此外，压敏模块产生传感器信号，该传感器信号指示由与参考气体体积内的参考气体相互作用的发射器模块发射的光脉冲引起的声波信息。 此外，发射器模块被布置成使得发射器模块发射的光脉冲在穿过要被分析的气体填充的体积之后达到参考气体体积。
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