公开(公告)号：US10388821B2

公开(公告)日：2019-08-20

申请号：US15971744

申请日：2018-05-04

Applicant: Kaneka Corporation

Inventor： Daisuke Adachi ,  Toru Terashita ,  Toshihiko Uto

IPC: H01L31/18 ,  H01L21/288 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/20

Abstract: A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method.

公开(公告)号：US20190140119A1

公开(公告)日：2019-05-09

申请号：US16234826

申请日：2018-12-28

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi

IPC: H01L31/0352 ,  H01L31/0747 ,  H01L31/0224 ,  H01L31/20 ,  H01L31/0236 ,  H01L31/18

Abstract: A crystalline silicon-based solar cell includes, in the following order, a crystalline silicon substrate having a first principal surface, a non-single-crystalline silicon-based thin-film, and a transparent electroconductive layer. The non-single-crystalline silicon-based thin-film and the transparent electroconductive layer are disposed on the first principal surface. The non-single-crystalline silicon-based thin-film comprises, in the following order from the first principal surface, an intrinsic silicon-based thin-film and a conductive silicon-based thin-film. The first principal surface has a plurality of pyramidal projections, each having a top portion, a middle portion, and a bottom portion. A thickness of the non-single-crystalline silicon-based thin-film disposed on the top portions is smaller than a thickness of the non-single-crystalline silicon-based thin-film disposed on the middle portions.

公开(公告)号：US10193007B2

公开(公告)日：2019-01-29

申请号：US15127390

申请日：2015-03-26

Applicant: KANEKA CORPORATION

Inventor： Toru Terashita ,  Daisuke Adachi

IPC: H01L31/052 ,  H01L31/05 ,  H01L31/0224 ,  H01L31/0747

Abstract: This solar cell module includes a solar cell and a wiring member. The solar cell includes a collecting electrode on a light-receiving side of a photoelectric conversion section, and a back electrode on a back side of the photoelectric conversion section. Sequentially from the photoelectric conversion section side, the collecting electrode includes a first collecting electrode and a second collecting electrode, and the back electrode comprises a first back electrode and a second back electrode. It is preferable that the surface roughness Ra1 of the first collecting electrode and the surface roughness Ra2 of the second collecting electrode satisfy Ra1≥Ra2 and Ra2=1.0 to 10.0 μm. It is also preferable that the outermost layer of the second collecting electrode and the outermost layer of the second back electrode are mainly composed of the same electroconductive material.

公开(公告)号：US20170200852A1

公开(公告)日：2017-07-13

申请号：US15473045

申请日：2017-03-29

Applicant: KANEKA CORPORATION

Inventor： Toshihiko Uto ,  Daisuke Adachi

IPC: H01L31/18 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0236

CPC classification number: H01L31/1804 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0747 ,  H01L31/1868 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the single-crystalline silicon substrate using ozone, depositing an intrinsic silicon-based layer on the texture on the single-crystalline silicon substrate, and depositing a conductive silicon-based layer on the intrinsic silicon-based layer, in this order. The single-crystalline silicon substrate before deposition of the intrinsic silicon-based layer has a texture size of less than 5 μm. A recess portion of the texture has a curvature radius of less than 5 nm. After deposition of at least a part of the intrinsic silicon-based layer and before deposition of the conductive silicon-based layer, the intrinsic silicon-based layer is subjected to a plasma treatment in an atmosphere of a gas mainly composed of hydrogen.

公开(公告)号：US20160133765A1

公开(公告)日：2016-05-12

申请号：US14997404

申请日：2016-01-15

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi ,  Kenji Yamamoto ,  Jose Luis Hernandez ,  Nick Valckx

IPC: H01L31/0224 ,  H01L31/0445

CPC classification number: H01L31/022475 ,  H01L31/022425 ,  H01L31/0445 ,  Y02E10/542 ,  Y02P70/521

Abstract: Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.

公开(公告)号：US20150075601A1

公开(公告)日：2015-03-19

申请号：US14346261

申请日：2012-12-21

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi ,  Kenji Yamamoto

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/022433 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a photoelectric conversion section having first and second principal surfaces, and a collecting electrode formed on the first principal surface. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and includes an insulating layer between the first and second electroconductive layers. The insulating layer is provided with an opening, and the first and second electroconductive are in conduction with each other via the opening provided in the insulating layer. The solar cell has, on the first principal surface, the second principal surface or a side surface of the photoelectric conversion section, an insulating region freed of a short circuit of front and back sides of the photoelectric conversion section, and the surface of the insulating region is at least partially covered with the insulating layer.

Abstract translation: 太阳能电池包括具有第一和第二主表面的光电转换部分和形成在第一主表面上的集电极。 收集电极从光电转换部分侧依次包括第一和第二导电层，并且在第一和第二导电层之间包括绝缘层。 绝缘层设置有开口，并且第一和第二导电体经由设置在绝缘层中的开口彼此导通。 太阳能电池在第一主面上具有光电转换部的第二主面或侧面，没有光电转换部的前后侧的短路的绝缘区域和绝缘体的表面 区域至少部分地被绝缘层覆盖。

公开(公告)号：US11069828B2

公开(公告)日：2021-07-20

申请号：US16729191

申请日：2019-12-27

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi

IPC: H01L21/00 ,  H01L31/18 ,  C23C16/24 ,  C23C16/50 ,  H01L31/0747

Abstract: A method for manufacturing a crystalline silicon-based solar cell includes performing a plasma treatment on a plurality of conductive single-crystalline silicon substrates in a chemical vapor deposition (CVD) chamber, each of the conductive single-crystalline silicon substrates having an intrinsic silicon-based layer on a first principal surface thereof. The first principal surface of the conductive single-crystalline silicon substrate may have a pyramidal texture that comprises a plurality of projections having a top portion, a middle portion, and a valley portion. The plasma treatment may include introducing a hydrogen gas and a silicon-containing gas into the CVD chamber and exposing a surface of the intrinsic silicon-based layer to hydrogen plasma. An amount of the hydrogen gas introduced into the CVD chamber during the plasma treatment may be 150 to 2500 times an amount of the silicon-containing gas introduced into the CVD chamber.

公开(公告)号：US10964826B2

公开(公告)日：2021-03-30

申请号：US15033230

申请日：2014-10-29

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi ,  Kunta Yoshikawa

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/0216 ,  H01L31/046

Abstract: A photoelectric conversion section of a solar cell has a first electrode layer and a collecting electrode that are formed in this order on a first principal surface, and has a second electrode layer that is formed on a second principal surface. The collecting electrode includes a first electroconductive layer, an insulating layer, and a second electroconductive layer in this order on the first electrode layer. The first and second electroconductive layers are electrically connected via an opening section in the insulating layer. At peripheral edge of the first and second principal surfaces, the photoelectric conversion section has an insulating region excluding the first or second electrode layer. On the side of the principal surface having no insulating region, the first or second electrode layer is formed up to the peripheral end of the relevant principal surface.

公开(公告)号：US20200091362A1

公开(公告)日：2020-03-19

申请号：US16689497

申请日：2019-11-20

Applicant: KANEKA CORPORATION

Inventor： Daisuke Adachi

IPC: H01L31/05 ,  H01L31/18 ,  H01L31/054 ,  H01L31/0224

Abstract: A solar cell module having low resistance loss between a collector electrode and a connection wiring line, and a method for producing the solar cell module. A solar cell includes a finger electrode portion extending in a predetermined direction, the finger electrode portion being a region in which a collector electrode is disposed, in plan view of a photoelectric conversion section. The finger electrode portion has a stacked structure in which a first conductive layer and a second conductive layer having a lower resistance than the first conductive layer are stacked on the photoelectric conversion section. A wiring member is arranged on the collector electrode in a manner to intersect the finger electrode portion. An intersecting region between the finger electrode portion of the solar cell and the wiring member has a lamination structure in which the first conductive layer and the wiring member are stacked.

公开(公告)号：US10217887B2

公开(公告)日：2019-02-26

申请号：US15308030

申请日：2015-04-09

Applicant: KANEKA CORPORATION

Inventor： Toshihiko Uto ,  Daisuke Adachi ,  Hisashi Uzu

IPC: H01L31/0747 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/18

Abstract: The crystalline silicon-based solar cell includes a first intrinsic silicon-based thin-film, a p-type silicon-based thin-film, a first transparent electrode layer, and a patterned collecting electrode on a first principal surface of an n-type crystalline silicon substrate; and a second intrinsic silicon-based thin-film, an n-type silicon-based thin-film, a second transparent electrode layer, and a plated metal electrode on a second principal surface of the n-type crystalline-silicon substrate. On a peripheral edge of the first principal surface, an insulating region freed of a short-circuit between the first transparent electrode layer and the second transparent electrode layer is provided. The plated metal electrode is formed on an entire region of the second transparent electrode layer.