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    Photoacid generator and photoresist comprising same
    31.
    发明授权
    Photoacid generator and photoresist comprising same 有权
    光生酸产生剂和包含其的光致抗蚀剂

    公开(公告)号：US08900794B2

    公开(公告)日：2014-12-02

    申请号：US13630456

    申请日：2012-09-28

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Cheng-Bai Xu ,  Mingqi Li ,  Shintaro Yamada ,  William Williams, III

    IPC: G03F7/038 ,  G03F7/039 ,  G03F7/029 ,  G03F7/09 ,  C07C309/65

    CPC classification number: G03F7/30 ,  C07C309/65 ,  C07C311/09 ,  C07C2603/74 ,  C07D313/08 ,  C07D313/10 ,  C07D327/04 ,  C07D493/18 ,  C07D497/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/2041

    Abstract: A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)n—SO3−Z+  (I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10,k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater. A precursor compound to the photoacid generator, a photoresist composition including the photoacid generator, and a substrate coated with the photoresist composition, are also disclosed.

    Abstract translation: 光生酸化合物具有式（I）：其中A是取代基的[A-（CHR1）p] k-（L） - （CH2）m-（C（R2）2）n-SO3-Z +（I） 或任选包含O，S，N，F或包含前述至少之一的组合的未取代的单环，多环或稠合多环C 5或更多脂环族基团，R 1是H，单键或取代或未取代的C1 -30烷基，其中当R 1为单键时，R 1与A的碳原子共价连接，每个R 2独立地为H，F或C 1-4氟烷基，其中至少一个R 2不为氢，L为 包含磺酸酯基，磺酰胺基或C1-30磺酸酯或磺酰胺的基团的连接基团，Z是有机或无机阳离子，p是0至10的整数，k是1或2，m是整数 为0以上，n为1以上的整数。 还公开了光致酸产生剂的前体化合物，包含光致酸产生剂的光致抗蚀剂组合物和涂有光致抗蚀剂组合物的基材。

    Pattern formation methods
    32.
    发明授权
    Pattern formation methods 有权

    公开(公告)号：US12228859B2

    公开(公告)日：2025-02-18

    申请号：US16225551

    申请日：2018-12-19

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Choong-Bong Lee ,  Stefan J. Caporale ,  Jason A. DeSisto ,  Jong Keun Park ,  Cong Liu ,  Cheng-Bai Xu ,  Cecily Andes

    IPC: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C09D133/08 ,  C09D133/14 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

    Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

    Photoresist pattern trimming methods
    38.
    发明授权
    Photoresist pattern trimming methods 有权

    公开(公告)号：US10162266B2

    公开(公告)日：2018-12-25

    申请号：US14145207

    申请日：2013-12-31

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Gerhard Pohlers ,  Cheng-Bai Xu ,  Kevin Rowell

    IPC: G03F7/32 ,  G03F7/40 ,  G03F7/039

    Abstract: Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

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