Abstract:
A method of manufacturing a vertical comb structure for a micro electromechanical (MEMS) device. Tooth structures are formed on a first wafer. A second wafer is then bonded to the tooth structures of the first wafer. The tooth structures are then released to form a comb structure. Forming the tooth structures on the first wafer includes using oxidation, photolithography, etching, epitaxy, and chemical and mechanical polishing to create the tooth structures on the first wafer.
Abstract:
A method of fabricating a device using a multi-layered wafer that has an embedded etch mask adapted to map a desired device structure onto an adjacent (poly)silicon layer. Due to the presence of the embedded mask, it becomes possible to delay the etching that forms the mapped structure in the (poly)silicon layer until a relatively late fabrication stage. As a result, flatness of the (poly)silicon layer is preserved for the deposition of any necessary over-layers, which substantially obviates the need for filling the voids created by the structure formation with silicon oxide.
Abstract:
An actuator includes: a base section; an object having a body portion and a holding portion holding the body portion in a manner that the body portion is movable against the base section; a movable comb-tooth portion extending from the object side in a direction substantially perpendicular to a formation direction of the holding portion; and a fixed comb-tooth portion which extends from the base section in a direction substantially perpendicular to the formation direction of the holding portion and which is arranged at a position at which the fixed comb-tooth portion is engaged with but having a gap from the movable comb-tooth portion; the fixed comb-tooth portion being composed of a steady-voltage-receiving fixed comb tooth that steadily supplies a drive voltage and a variable-voltage-receiving fixed comb tooth that receives a controlled voltage.
Abstract:
A pair of comb-teeth electrodes are made from a material substrate including a first conduction layer, a second conduction layer and an intervening insulation layer. The paired electrodes includes first and second comb-teeth electrodes. The first comb-teeth electrode is composed of a first conductor derived from the first conduction layer, a second conductor derived from the second conduction layer and an insulator derived from the insulation layer. The second comb-teeth electrode is derived from the second conduction layer.
Abstract:
A micro-actuator having a stage capable of a see-saw motion and a method for its manufacture are disclosed. In the micro-actuator according to the present invention, a plurality of parallel driving comb-type electrodes are formed on the bottom of the stage, and a plurality of parallel fixed comb-type electrodes are formed on a base plate. At both sides of the stage is a torsion bar that enables the see-saw motion. The torsion bar is supported by a frame comprised of a first frame layer and a second frame layer. The torsion bar and the first frame layer form one body. The first and second frame layers are bonded by a metal eutectic bonding layer between metal layers.
Abstract:
Methods of making microelectromechanical combdrive devices are disclosed. The device may optionally be formed using three device layers. A moveable element and flexure may be formed from a first device layer. The second device layer may be attached to the first and a first set of comb teeth are formed from the second device layer. One or more comb teeth in the first set extend from a major surface of the moveable element. A third device layer is attached to the second device layer and a second set of comb teeth are formed from the third device layer. An alignment target is formed in the first device layer. Corresponding alignment holes are formed in the second or third device layers.
Abstract:
A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top of the first layer, forming first supporting parts and first operative parts of the device in the second layer, forming temporary anchors in the first layer, and bonding the first wafer to a second wafer, with the second layer facing the second wafer. After bonding the first wafer and the second wafer together, second supporting parts and second operative parts of said device are formed in the first layer. The temporary anchors are removed from the first layer to free the operative parts formed therein.
Abstract:
A two-dimensional scanner consists of a rotatable gimbal structure with vertical electrostatic comb-drive actuators and sensors. The scanner's two axes of rotation may be controlled independently by activating two sets of vertical comb-drive actuators. The first set of vertical comb-drive actuator is positioned in between a outer frame of the gimbal structure and the base, and the second set of vertical comb-drive actuator is positioned in between the inner part of the gimbal structure and the outer frame of the gimbal structure. The inner part of the gimbal structure may include a reflective surface, and the device may be used as a mirror. Furthermore, the capacitance of the vertical comb-drives may be measured to monitor the angular position of the mirror, and the capacitive position-monitoring signal may be used to implement closed-loop feedback control of the mirror angle. The two-dimensional scanner may be fabricated in a semiconductor process. Two-dimensional scanners may be used to produce fiber-optic switches.
Abstract:
A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such that the doped region electrically isolates the two portions of the substrate from each other via junction isolation.
Abstract:
Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.