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    METHOD FOR MANUFACTURING A STRUCTURED SURFACE
    34.
    发明申请
    METHOD FOR MANUFACTURING A STRUCTURED SURFACE 有权
    制造结构表面的方法

    公开(公告)号：US20150140717A1

    公开(公告)日：2015-05-21

    申请号：US14543116

    申请日：2014-11-17

    Applicant: Robert Bosch GmbH

    Inventor： Andrea URBAN

    IPC: B81C1/00 ,  B81C99/00

    CPC classification number: B81C1/00857 ,  B81C1/00388 ,  B81C1/00531 ,  B81C1/00849 ,  B81C99/0025 ,  B81C2201/0123 ,  B81C2201/0125 ,  B81C2201/0132

    Abstract: A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set.

    Abstract translation: 描述了一种用于制造微机械结构的方法，其中通过第一方法步骤中的蚀刻方法在衬底中形成结构化表面，并且在第二方法步骤中至少部分地从结构化表面除去残余物。 在第二方法步骤中，设定低于60Pa的基板的环境压力，设定高于150℃的基板温度。

    Method for manufacturing MEMS device
    35.
    发明授权
    Method for manufacturing MEMS device 有权
    MEMS器件制造方法

    公开(公告)号：US08877537B2

    公开(公告)日：2014-11-04

    申请号：US13882337

    申请日：2011-05-19

    Applicant: Jianhong Mao ,  Deming Tang

    Inventor： Jianhong Mao ,  Deming Tang

    IPC: H01L21/00 ,  B81C1/00 ,  G01P15/08 ,  H03H3/007

    CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81B2207/07 ,  B81C1/00293 ,  B81C2201/0109 ,  B81C2201/0125 ,  B81C2203/0145 ,  G01P15/0802 ,  G01P2015/0828 ,  H03H3/0072

    Abstract: A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein; forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (301); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.

    Abstract translation: 提供了一种用于制造微机电系统（MEMS）装置的方法。 该方法包括：提供半导体衬底，其中形成有金属互连结构（100）的半导体衬底; 在所述半导体衬底的表面上形成第一牺牲层（201），所述第一牺牲层的材料是无定形碳; 蚀刻第一牺牲层以形成第一凹部（301）; 在第一牺牲层的表面上覆盖并形成第一介电层（401）; 通过化学机械抛光（CMP）工艺使第一介电层变薄，直到暴露出第一牺牲层; 在所述第一牺牲层的表面上形成微机械结构层（500）并暴露所述第一牺牲层，其中所述微机械结构层的一部分连接到所述第一介电层。 该方法避免抛光无定形碳，缩短生产周期，提高生产效率。

    Method for processing a wafer at unmasked areas and previously masked areas to reduce a wafer thickness
    36.
    发明授权
    Method for processing a wafer at unmasked areas and previously masked areas to reduce a wafer thickness 有权
    在未掩蔽区域处理晶片的方法和先前掩蔽的区域以减小晶片厚度

    公开(公告)号：US08871550B2

    公开(公告)日：2014-10-28

    申请号：US13480295

    申请日：2012-05-24

    Applicant: Thomas Grille ,  Ursula Hedenig ,  Martin Zgaga ,  Daniel Maurer

    Inventor： Thomas Grille ,  Ursula Hedenig ,  Martin Zgaga ,  Daniel Maurer

    IPC: H01L21/00 ,  H01L29/84 ,  H01L21/306

    CPC classification number: H01L21/30608 ,  B81C1/00619 ,  B81C2201/0125 ,  H04R19/005

    Abstract: A method for processing a wafer having microelectromechanical system structures at the first main surface includes applying a masking material at the second main surface and structuring the masking material to obtain a plurality of masked areas and a plurality of unmasked areas at the second main surface. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas to form a plurality of recesses. The masking material is then removed at least at some of the masked areas to obtain previously masked areas. The method further includes anisotropically etching the wafer from the second main surface at the unmasked areas and the previously masked areas to increase a depth of the recesses and reduce a thickness of the wafer at the previously masked areas.

    Abstract translation: 一种用于在第一主表面处理具有微机电系统结构的晶片的方法包括在第二主表面处施加掩模材料并构造掩模材料，以在第二主表面处获得多个掩模区域和多个未掩模区域。 该方法还包括在未掩蔽区域从第二主表面各向异性地蚀刻晶片以形成多个凹部。 至少在一些掩蔽区域处去除掩模材料以获得先前掩蔽的区域。 该方法还包括在未掩蔽区域和先前掩蔽的区域从第二主表面各向异性地蚀刻晶片，以增加凹槽的深度并减小先前掩蔽区域的晶片厚度。

    Method for Microfabrication of a Capacitive Micromachined Ultrasonic Transducer Comprising a Diamond Membrane and a Transducer Thereof
    37.
    发明申请
    Method for Microfabrication of a Capacitive Micromachined Ultrasonic Transducer Comprising a Diamond Membrane and a Transducer Thereof 有权
    包含金刚石膜及其传感器的电容式微加工超声波传感器的微加工方法

    公开(公告)号：US20120256517A1

    公开(公告)日：2012-10-11

    申请号：US13083599

    申请日：2011-04-11

    Applicant: Baris Bayram

    Inventor： Baris Bayram

    IPC: H02N1/00 ,  H04R31/00

    CPC classification number: B81C1/00158 ,  B06B1/0292 ,  B81B2201/0292 ,  B81C2201/0125 ,  Y10T29/49005

    Abstract: This invention relates generally to capacitive micromachined ultrasonic transducers (CMUTs), particularly to those comprising diamond or diamond like carbon membranes and a method of microfabrication of such CMUTs, wherein the membrane of diamond or diamond like carbon is attached to the substrate by plasma-activated direct bonding of an interlayer of high temperature oxide (HTO).

    Abstract translation: 本发明一般涉及电容微加工超声波换能器（CMUT），特别涉及包括金刚石或类似金刚石的碳膜的那些，以及这种CMUT的微细加工方法，其中金刚石或类似金刚石的碳膜通过等离子体激活 直接键合高温氧化物（HTO）的中间层。

    Manufacturing methods of MEMS device
    39.
    发明授权
    Manufacturing methods of MEMS device 失效
    MEMS器件的制造方法

    公开(公告)号：US06946315B2

    公开(公告)日：2005-09-20

    申请号：US10961162

    申请日：2004-10-12

    Applicant: Koichi Ikeda ,  Takashi Kinoshita

    Inventor： Koichi Ikeda ,  Takashi Kinoshita

    IPC: B81C1/00 ,  B81B3/00 ,  H01L21/00

    CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0119 ,  B81C2201/0125

    Abstract: The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.

    Abstract translation: 本发明涉及静电型MEMS器件的制造方法。 本发明的制造方法包括在基板上形成基板侧电极，在形成牺牲层之前或之后形成流体膜的步骤，在流体膜的平坦化表面上进一步形成具有驱动侧电极的光束， 最后，去除牺牲层。 此外，执行上述方法使驱动侧电极的表面平坦化，减小了波束形状的波动，提高了MEMS器件的性能和均匀性。

    MEMS element manufacturing method
    40.
    发明授权
    MEMS element manufacturing method 失效
    MEMS元件制造方法

    公开(公告)号：US06838304B2

    公开(公告)日：2005-01-04

    申请号：US10468757

    申请日：2002-12-16

    Applicant: Koichi Ikeda ,  Takashi Kinoshita

    Inventor： Koichi Ikeda ,  Takashi Kinoshita

    IPC: B81C1/00 ,  B81B3/00 ,  H01L21/00

    CPC classification number: B81C1/00611 ,  B81B2201/042 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0119 ,  B81C2201/0125

    Abstract: The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.

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