NAND FLASH STORAGE ERROR MITIGATION SYSTEMS AND METHODS

    公开(公告)号:US20170185328A1

    公开(公告)日:2017-06-29

    申请号:US14983361

    申请日:2015-12-29

    Inventor: Shu LI

    Abstract: The present invention facilitates efficient and effective information storage device operations. In one embodiment, a storage device comprises: a plurality of storage cells configured to store information; a plurality of word lines coupled to the plurality of storage cells; and a plurality of bit lines coupled to the plurality of storage cells, wherein the plurality of bit lines are configured to enable writing of the plurality of storage cells and the plurality of word lines are configured to enable reading of the storage cells. The information is configured in a plurality of information first type portions (e.g., codewords) which respectively include a plurality of second type portions (e.g., data chunks), and the information is stored by the plurality of storage cells in a distribution that ensures two second type portions from a respective first type portion are not stored in storage cells adjacent to one another.

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