公开(公告)号：US20240266220A1

公开(公告)日：2024-08-08

申请号：US18105390

申请日：2023-02-03

Applicant: Applied Materials, Inc.

Inventor： Jonathan Bryant MELLEN ,  Clinton GOH ,  Cheng SUN

IPC: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67 ,  H01L23/544

CPC classification number: H01L21/78 ,  B23K26/38 ,  B23K26/40 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67207 ,  H01L23/544 ,  H01J2237/022 ,  H01J2237/334 ,  H01L2223/5446

Abstract: A method for dicing a die from a substrate for bonding that leverages laser and multiple etch processes. The method may include performing a laser cutting process to form a cut that removes a first portion of a dicing street in the substrate, performing a first plasma etch process to increase the laser kerf width to a first plasma etch width that is less than a dicing street width and to remove any non-silicon material from a bottom of the cut, and performing a second plasma etch process to increase the first plasma etch width to the dicing street width and to remove any remaining portion of the dicing street to completely separate the die from the substrate.

公开(公告)号：US20240266201A1

公开(公告)日：2024-08-08

申请号：US18432232

申请日：2024-02-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshiyuki TAKASAKI ,  Shogo OKITA ,  Minghui ZHAO

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32715 ,  H01J37/3299 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/332 ,  H01J2237/334

Abstract: A plasma processing apparatus includes an ESC system having an ESC electrode, a plasma generator generating a first and a second plasma, a controller controlling the ESC system and the plasma generator such that a first or second processing with the first or second processing is performed on a substrate chucked to a stage, and an abnormality detector detecting abnormality, based on a plurality of parameters. The abnormality detector performs an abnormality detection during predetermined period DT immediately after switching between the first processing and the second processing, based on a first parameter including a monitoring information related to voltage V and/or current I applied to the ESC electrode and does not include a monitoring information related to pressure PR within a chamber, and performs an abnormality detection during other than predetermined period DT, based on a second parameter including the monitoring information related to pressure PR within the chamber.

公开(公告)号：US20240258078A1

公开(公告)日：2024-08-01

申请号：US18427838

申请日：2024-01-31

Applicant: Tokyo Electron Limited

Inventor： Takahiko SATO

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32568 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: There is a plasma processing apparatus comprising: a plasma processing chamber; an electrostatic chuck disposed on a base, and comprising a substrate mounting portion and an edge ring mounting portion; and at least one of a first power supply part that supplies power to the substrate mounting portion and a second power supply part that supplies power to the edge ring mounting portion, wherein the first power supply part comprises: a first electrode layer formed on the substrate mounting portion; a first adsorption electrode layer disposed under the first electrode layer; and a first bias power source connected to the first electrode layer, and wherein the second power supply part comprises: a second electrode layer formed on the edge ring mounting portion; a second adsorption electrode layer disposed under the second electrode layer; and a second bias power source connected to the second electrode layer.

公开(公告)号：US12046477B2

公开(公告)日：2024-07-23

申请号：US17144628

申请日：2021-01-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming Chyi Liu ,  Hung-Wen Hsu ,  Min-Yung Ko

IPC: H01L21/304 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/67 ,  H01L23/522

CPC classification number: H01L21/3065 ,  H01J37/32724 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L23/5226 ,  H01J2237/334

Abstract: A work piece is positioned on a work piece support, which includes a plurality of temperature control zones. A pre-etch surface topography is determined by measuring a plurality of pre-etch surface heights or thicknesses at a plurality of sites on the work piece. The plurality of sites correspond to the plurality of temperature control zones on the work piece support. At least a first zone of the temperature control zones is heated or cooled based on the measured plurality of pre-etch surface heights or thicknesses, so that the first zone has a first temperature different from a second temperature of a second zone of the temperature control zones. A dry etch is carried out while the first zone has the first temperature different from the second temperature of the second zone of the temperature control zones.

公开(公告)号：US12046450B2

公开(公告)日：2024-07-23

申请号：US18012212

申请日：2021-09-24

Applicant: Lam Research Corporation

Inventor： Ying Wu ,  John Stephen Drewery ,  Alexander Miller Paterson ,  Xiang Zhou ,  Zhuoxian Wang ,  Yoshie Kimura

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334

Abstract: Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

公开(公告)号：US20240234100A9

公开(公告)日：2024-07-11

申请号：US18381151

申请日：2023-10-17

Applicant: SEMES CO., LTD.

Inventor： Je Ho KIM ,  Tae Suk JUNG

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32633 ,  H01J37/3244 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68742 ,  H01J2237/334

Abstract: Proposed is a substrate processing apparatus, including a housing configured to provide a processing space therein, a substrate support unit configured to support a substrate within the processing space, and a baffle unit provided to surround a circumference of the substrate support unit. The baffle unit includes a baffle plate provided to surround the circumference of the substrate support unit and having at least one slit therein, and a drive member that lifts and moves the baffle plate, and the housing is provided in a shape capable of changing a size of a space between the processing space and the baffle plate according to a lifting movement of the baffle plate.

公开(公告)号：US12033833B2

公开(公告)日：2024-07-09

申请号：US17587189

申请日：2022-01-28

Applicant: Tokyo Electron Limited

Inventor： Koji Yamagishi ,  Yuji Aota ,  Koichi Nagami ,  Kota Ishiharada

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32577 ,  H01J37/32651 ,  H01J2237/334

Abstract: There is provided a radio frequency power filter circuit used in a plasma processing apparatus that includes an electrode and a feeding body connected to a center of a rear surface of the electrode and generates plasma by applying radio frequency power, the filter circuit including a series resonance circuit provided in a wiring line between a conductive member provided in the plasma processing apparatus and a power supply configured to supply DC power or power having a frequency of less than 400 kHz to the conductive member, and including a coil connected in series to the wiring line and a capacitor connected between the wiring line and a ground. A central axis of the coil and a central axis of the feeding body coincide with each other.

公开(公告)号：US20240222075A1

公开(公告)日：2024-07-04

申请号：US18605275

申请日：2024-03-14

Applicant: Tokyo Electron Limited

Inventor： Naoki MATSUMOTO ,  Ken KOBAYASHI ,  Shinya TAMONOKI

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32091 ,  H01J37/32146 ,  H01J2237/327 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a first power source configured to supply a first electric signal to an antenna, the first electric signal including a first RF signal having a first RF frequency; a second power source configured to supply a second electric signal to at least one electrode, the second electric signal including a second RF signal having a second RF frequency; a third power source configured to supply a third electric signal to the at least one electrode, the third electric signal including a third RF signal or a DC signal having a third RF frequency that is lower than the first RF frequency and the second RF frequency; and a controller configured to control the first power source, the second power source, and the third power source so as to selectively execute a first, a second, and a third plasma processing mode.

公开(公告)号：US20240212992A1

公开(公告)日：2024-06-27

申请号：US18453378

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changheon Lee ,  Sangki Nam ,  Kuihyun Yoon ,  Kiho Lee ,  Sangho Lee ,  Sangheun Lee ,  Jaemin Rhee ,  Junghyun Cho ,  Seoyeon Choi

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J37/3299 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Provided is a plasma processing apparatus including a substrate chuck in a chamber, a restriction ring surrounding an outer perimeter of the substrate chuck, a movable ring on the restriction ring, and an actuator configured to move the movable ring, wherein grooves formed in the restriction ring are opened or closed by movement of the movable ring. In addition, provided is a plasma processing method using the plasma processing apparatus.

公开(公告)号：US20240212987A1

公开(公告)日：2024-06-27

申请号：US18433862

申请日：2024-02-06

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Kota ISHIHARADA ,  Hideaki YAKUSHIJI ,  Yoshiyasu SATO ,  Shinya MORIKITA ,  Shota YOSHIMURA ,  Toshihiro TSURUTA ,  Kazuaki TAKAAI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32834 ,  H01L21/67017 ,  H01J2237/334

Abstract: A gas supply system includes: gas supply flow paths for independently supplying gas to a processing chamber; a flow rate controller arranged in each gas supply flow path; a primary-side valve arranged on an upstream side of the flow rate controller; a primary-side gas exhaust flow path branched between the primary-side valve and the flow rate controller; a primary-side exhaust valve arranged in the primary-side gas exhaust flow path; a secondary-side valve arranged on a downstream side of the flow rate controller; a secondary-side gas exhaust flow path branched between the secondary-side valve and the flow rate controller; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust flow path. The flow rate controller includes: a control valve connected to the primary-side valve and the secondary-side valve; and a control-side orifice arranged between the control valve and the secondary-side valve.