公开(公告)号：US20060108907A1

公开(公告)日：2006-05-25

申请号：US10995003

申请日：2004-11-23

Applicant: Yasushi Sano

Inventor： Yasushi Sano

IPC: H01J1/02 ,  H01J1/00 ,  H01J1/14

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: The present investigation relate to an electron emission device which is composed by an insulated board in which a cathode electrode, an electron emission film, a gate insulation film, and a gate electrode were arranged, and an anode electrode estranged above said insulated board, and characterized by that an electron emission film is exposed to a bottom of an emitter hole provided in said gate insulation film on said insulated board, and an electron emission film in a part for an emitter hole central part being in a low position rather than an electron emission film of an emitter hole deep pool contiguity portion.

Abstract translation: 本研究涉及一种电子发射装置，其由布置有阴极电极，电子发射膜，栅极绝缘膜和栅电极的绝缘板和位于绝缘板上方的阳极电极组成， 其特征在于，电子发射膜暴露于设置在所述绝缘板上的所述栅极绝缘膜中的发射极的底部，并且用于发射极孔中心部分的电子发射膜位于低位置而不是电子 发射孔深池邻接部分的发射膜。

公开(公告)号：US20050269593A1

公开(公告)日：2005-12-08

申请号：US11180350

申请日：2005-07-13

Applicant: Aref Chowdhury ,  Hock Ng ,  Richart Slusher

Inventor： Aref Chowdhury ,  Hock Ng ,  Richart Slusher

IPC: H01L21/205 ,  B81B1/00 ,  G02B6/122 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01L21/306 ,  H01L29/24

CPC classification number: B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

Abstract: A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

Abstract translation: 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

公开(公告)号：US20050189870A1

公开(公告)日：2005-09-01

申请号：US11068067

申请日：2005-02-26

Applicant: Sang-Jo Lee ,  Chun-Gyoo Lee ,  Sang-Hyuck Ahn ,  Su-Bong Hong ,  Byong-Gon Lee ,  Sang-Ho Jeon ,  Yong-Soo Choi

Inventor： Sang-Jo Lee ,  Chun-Gyoo Lee ,  Sang-Hyuck Ahn ,  Su-Bong Hong ,  Byong-Gon Lee ,  Sang-Ho Jeon ,  Yong-Soo Choi

IPC: H01J1/304 ,  H01J3/02 ,  H01J1/62

CPC classification number: H01J3/022

Abstract: An electron emission device includes gate electrodes formed on a substrate. The gate electrodes are located on a first plane. An insulating layer is formed on the gate electrodes. Cathode electrodes are formed on the insulating layer. Electron emission regions are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(μm)≦D≦28.1553+1.7060t(μm), where t indicates a thickness of the insulating layer.

Abstract translation: 电子发射器件包括形成在衬底上的栅电极。 栅电极位于第一平面上。 在栅电极上形成绝缘层。 阴极电极形成在绝缘层上。 电子发射区域电连接到阴极电极。 电子发射区位于第二平面上。 此外，电子发射装置包括基本上放置在电子发射区的第二平面上的相对电极。 栅电极和对电极用于接收相同的电压，并且至少一个电子发射区域和至少一个相对电极之间的距离D满足以下条件：1（mum）<= D < = 28.1553 + 1.7060t（mum），其中t表示绝缘层的厚度。

公开(公告)号：US20050189865A1

公开(公告)日：2005-09-01

申请号：US10980677

申请日：2004-11-02

Applicant: Sang-Jin Lee

Inventor： Sang-Jin Lee

IPC: H01J29/04 ,  H01J1/00 ,  H01J1/30 ,  H01J1/304 ,  H01J1/62 ,  H01J3/02 ,  H01J29/06 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J3/022

Abstract: An electron emission device includes cathode electrodes and gate electrodes formed on a first substrate and crossing each other while interposing an insulation layer. Opening portions are formed at the gate electrodes and the insulation layer while exposing the cathode electrodes. Electron emission sources are formed on the cathode electrodes exposed through the opening portions each with an area smaller than the area of the opening portion. An anode electrode is formed on a second substrate. Phosphor layers are formed on the anode electrode each with long sides proceeding in a first direction and short sides proceeding in a second direction. When the first substrate is viewed from the plan side, the electron emission source satisfies the following condition: a

Abstract translation: 电子发射装置包括阴极电极和形成在第一衬底上的栅极，并且在插入绝缘层的同时彼此交叉。 在阴极电极露出的同时，在栅电极和绝缘层上形成开口部。 电子发射源形成在通过开口部暴露的阴极电极，每个阴极电极的面积小于开口部分的面积。 在第二基板上形成阳极电极。 在阳极电极上形成荧光体层，其长边沿第一方向进行，短边沿第二方向进行。 当从平面侧观察第一衬底时，电子发射源满足以下条件：a

公开(公告)号：US20050174028A1

公开(公告)日：2005-08-11

申请号：US11048810

申请日：2005-02-03

Applicant: Jae-Eun Jung ,  Jong-Min Kim ,  Tae-Sik Oh ,  Young-Jun Park

Inventor： Jae-Eun Jung ,  Jong-Min Kim ,  Tae-Sik Oh ,  Young-Jun Park

IPC: G02F1/13357 ,  F21S2/00 ,  F21Y105/00 ,  H01J1/304 ,  H01J3/02 ,  H01J29/48 ,  H01J63/06 ,  H01J1/02 ,  H01J1/14

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J3/022 ,  H01J29/481 ,  H01J63/06 ,  H01J2201/30469

Abstract: A field emission device and a backlight device using the field emission device includes a cathode electrode and a gate electrode formed in alternating parallel strips on a substrate, a catalytic metal layer arranged on the cathode electrode and adapted to enhance Carbon NanoTube (CNT) growth, and grown CNTs arranged on the catalytic metal layer.

Abstract translation: 场致发射器件和使用场致发射器件的背光装置包括阴极电极和在基底上以交替的平行条形成的栅电极，布置在阴极上的催化金属层，并适于增强碳纳米管（CNT）生长， 并且生长的CNT布置在催化金属层上。

公开(公告)号：US20050168128A1

公开(公告)日：2005-08-04

申请号：US11046285

申请日：2005-01-27

Applicant: Jung-Ho Kang

Inventor： Jung-Ho Kang

IPC: H01J1/30 ,  H01J1/62 ,  H01J3/02 ,  H01J9/02 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J9/025

Abstract: An electron emission device includes first and second substrates facing each other, first electrodes formed on the first substrate, and second electrodes separated from the first electrodes by interposing an insulating layer. The first electrodes have first sub electrodes which with a partially removed portions, and second sub electrodes formed on at least one surface of the first sub electrodes with a transparent conductive material. Electron emission regions are formed on the second sub electrodes within the partially removed portions of the first sub electrodes. The electron emission regions are in surface contact with the second sub electrodes.

Abstract translation: 电子发射装置包括彼此面对的第一和第二基板，形成在第一基板上的第一电极和通过插入绝缘层与第一电极分离的第二电极。 第一电极具有第一子电极，其具有部分去除的部分，以及在第一子电极的至少一个表面上形成有透明导电材料的第二子电极。 电子发射区形成在第一子电极的部分去除部分中的第二子电极上。 电子发射区域与第二子电极表面接触。

公开(公告)号：US20050139817A1

公开(公告)日：2005-06-30

申请号：US11002242

申请日：2004-12-03

Applicant: Jun-Hee Choi ,  Andrei Zoulkarneev

Inventor： Jun-Hee Choi ,  Andrei Zoulkarneev

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127

Abstract: A field emission device manufactured by the disclosed method and employed in a display unit includes a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter. Electron beams are extracted from the CNT emitter and the extracted electron beams are focused onto a given position. The gate stack includes a mask layer that covers the emitter electrode provided around the CNT emitter, a gate insulating layer and a gate electrode sequentially formed on the mask layer, a focus gate insulating layer having double inclined planes facing the CNT emitter on the gate electrode, and focus gate electrode coated on the focus gate insulating layer.

Abstract translation: 通过所公开的方法制造并用于显示单元的场致发射器件包括玻璃衬底，形成在玻璃衬底上的发射极，形成在发射极上的碳纳米管（CNT）发射体，以及形成在CNT周围的栅叠层 发射器。 从CNT发射器提取电子束，并将提取的电子束聚焦到给定位置。 栅极堆叠包括覆盖围绕CNT发射极设置的发射极的掩模层，顺序形成在掩模层上的栅极绝缘层和栅电极，在栅电极上具有面向CNT发射极的双倾斜面的聚焦栅极绝缘层 ，并且聚焦栅电极涂覆在聚焦栅极绝缘层上。

公开(公告)号：US20050116214A1

公开(公告)日：2005-06-02

申请号：US10974895

申请日：2004-10-27

Applicant: Victor Mammana ,  Gary McGuire ,  Olga Shenderova

Inventor： Victor Mammana ,  Gary McGuire ,  Olga Shenderova

IPC: H01J3/02 ,  H01J9/02 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  Y10S977/939

Abstract: A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

Abstract translation: 与某些实施例一致的场发射器件具有形成栅电极的基本上平面的导体。 导电条在绝缘层上形成阴极。 绝缘层覆盖阴极和栅极之间的表面的至少一部分。 阳极位于阴极上方。 例如碳纳米管的发射极结构设置在最靠近阳极的阴极的表面上。 当跨绝缘层产生电场时，阴极/发射极结构具有功函数和纵横比的组合，其导致电子从发射极结构向阳极发射的场强低于引起来自其它辐射的场强 阴极的区域。 该摘要不被认为是限制性的，因为其他实施例可能偏离本摘要中描述的特征。

公开(公告)号：US06882098B2

公开(公告)日：2005-04-19

申请号：US10223625

申请日：2002-08-20

Applicant: Young-Chul Choi ,  Ji-Hoon Ahn ,  Hyek-Bok Rhee ,  Dong-Hee Han

Inventor： Young-Chul Choi ,  Ji-Hoon Ahn ,  Hyek-Bok Rhee ,  Dong-Hee Han

IPC: H01J1/312 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J1/62

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469

Abstract: The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500˜800 degrees Celsius (° C.).

Abstract translation: 本发明提供一种冷阴极电子源及其制造方法。 冷阴极电子源包括沉积有催化剂金属层，绝缘层和栅极金属层的基板; 通过催化剂金属层，绝缘层和栅极金属层形成的空腔部分; 以及通过多个碳纳米管实现的发射体，其从暴露在空腔部分中的具有平行于衬底的长轴的催化剂金属层的壁生长。 该方法包括在衬底上沉积催化剂金属层，绝缘层和栅极金属层; 通过使用光刻工艺去除栅极金属层，绝缘层和催化剂金属层的一部分来形成空腔部分; 并通过将基板安装在化学气相沉积反应器上并在500〜800摄氏度（℃）的低温气氛中生长碳纳米管而形成发射体。

公开(公告)号：US20050057168A1

公开(公告)日：2005-03-17

申请号：US10923818

申请日：2004-08-24

Applicant: Yoon Song ,  Chi Hwang ,  Kwang Kim

Inventor： Yoon Song ,  Chi Hwang ,  Kwang Kim

IPC: H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J31/12 ,  H01J7/24

CPC classification number: H01J3/022

Abstract: A field emission device including a cathode having an electric field emitter for emitting electrons, a field emission inducing gate for inducing electron emission, and an anode for receiving the emitted electrons. A field emission suppressing gate is interposed between the cathode and the field emission inducing gate for suppressing electron emission, so that problems such as gate leakage current, electron emission due to anode voltage, and electron beam spreading of the conventional field emission device are significantly overcome.

Abstract translation: 包括具有用于发射电子的电场发射体的阴极，用于感应电子发射的场致发射栅和用于接收发射的电子的阳极的场致发射装置。 在阴极和用于抑制电子发射的场致发射栅之间插入场致发射抑制栅极，从而显着地克服了常规场致发射器件中的栅极漏电流，由阳极电压引起的电子发射和电子束扩散等问题 。