公开(公告)号：US20120299671A1

公开(公告)日：2012-11-29

申请号：US13551122

申请日：2012-07-17

Applicant: Taro IKEDA ,  Yuki OSADA ,  Shigeru KASAI

Inventor： Taro IKEDA ,  Yuki OSADA ,  Shigeru KASAI

IPC: H01P1/00

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32293 ,  H01J37/32311 ,  H01Q15/0006 ,  H05H2001/4622 ,  H05H2001/463

Abstract: An electromagnetic-radiation power-supply mechanism includes a microwave power introduction port provided on the side of the coaxial waveguide, a power line being connected to the microwave power introduction port; and a power supply antenna for radiating the electromagnetic wave power into the waveguide, the power supply antenna being connected to the power line. The power supply antenna includes an antenna body having a first pole connected to the power line and a second pole connected to an inner conductor of the waveguide; and a ring-shaped reflection portion extending from opposite sides of the antenna body.

Abstract translation: 电磁辐射供电机构包括设置在同轴波导一侧的微波功率引入口，与微波功率引入口连接的电力线; 以及用于将电磁波功率辐射到波导中的电源天线，电源天线连接到电力线。 电源天线包括天线体，其具有连接到电力线的第一极和连接到波导的内部导体的第二极; 以及从天线体的相对侧延伸的环状的反射部。

公开(公告)号：US20110114600A1

公开(公告)日：2011-05-19

申请号：US12997183

申请日：2009-06-03

Applicant: Masaki Hirayama ,  Tadahiro Ohmi

Inventor： Masaki Hirayama ,  Tadahiro Ohmi

IPC: C23F1/08 ,  C23C16/50 ,  C23C16/455 ,  C23F1/00

CPC classification number: H05H1/46 ,  C03C17/002 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229

Abstract: Provided is a coaxial waveguide distributor including a coaxial waveguide which extends non-perpendicularly at a branched portion. A plasma processing apparatus in which a gas is excited by microwaves to plasma process an object to be processed includes a processing container, a microwave source which outputs microwaves, a transmission line which transmits the microwaves output from the microwave source, a plurality of dielectric plates which are provided on an inner wall of the processing container and emit microwaves into the processing container, a plurality of first coaxial waveguides which are adjacent to the plurality of dielectric plates and transmit microwaves to the plurality of dielectric plates, and one stage or two or more stages of a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the plurality of first coaxial waveguides. The coaxial waveguide distributor include s a second coaxial waveguide having an input portion and three or more of third coaxial waveguides which are connected to the second coaxial waveguide. Each of the third coaxial waveguides extends non-perpendicularly with respect to the second cable.

Abstract translation: 提供了一种同轴波导分配器，其包括在分支部分处非垂直延伸的同轴波导。 其中气体被微波激发以等离子体处理被处理物体的等离子体处理装置包括处理容器，输出微波的微波源，将微波源输出的微波传输的传输线，多个电介质板 它们设置在处理容器的内壁上并向处理容器发射微波;多个第一同轴波导，其与多个电介质板相邻并且将微波传输到多个电介质板，以及一个或两个或两个 更多级的同轴波导分配器，其将通过传输线传输的微波分布并传输到多个第一同轴波导。 同轴波导分配器包括具有连接到第二同轴波导的输入部分和三个或更多个第三同轴波导的第二同轴波导。 第三同轴波导中的每一个相对于第二缆线非垂直地延伸。

公开(公告)号：US07562638B2

公开(公告)日：2009-07-21

申请号：US11318360

申请日：2005-12-23

Applicant: Mohammad Kamarehi ,  Ing-Yann Albert Wang

Inventor： Mohammad Kamarehi ,  Ing-Yann Albert Wang

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H05H1/46 ,  H01J37/32211 ,  H01J37/32357

Abstract: An arrangement configured to contain plasma within plasma tube assembly of downstream microwave plasma system. Downstream microwave plasma system is configured to generate plasma within plasma-sustaining region of plasma tube assembly and channeling at least portion of plasma downstream to plasma processing chamber of downstream microwave plasma system. Arrangement includes a first hollow center electrically conductive disk surrounding a cylindrical structure that defines plasma passage of plasma tube assembly. Arrangement also includes a second hollow center electrically conductive disk also surrounding the cylindrical structure. Second hollow center electrically conductive disk is configured to be disposed in a spaced-apart relationship relative to first hollow center electrically conductive disk so as to form a first hollow center disk-shape interstitial region between first hollow center electrically conductive disc and second hollow center electrically conductive disc.

Abstract translation: 配置成在下游微波等离子体系统的等离子体管组件内容纳等离子体的装置。 下游微波等离子体系统被配置为在等离子体管组件的等离子体维持区域内产生等离子体，并且将下游的等离子体处理室的等离子体下游的至少部分通道化。 布置包括围绕限定等离子体管组件的等离子体通道的圆柱形结构的第一空心中心导电盘。 布置还包括也围绕圆柱形结构的第二空心中心导电盘。 第二空心中心导电盘构造成相对于第一中空中心导电盘以间隔的关系设置，以便在第一中空中心导电盘和第二空心中心之间形成第一中空圆盘状间隙区域 导电盘。

公开(公告)号：US20090165951A1

公开(公告)日：2009-07-02

申请号：US12400266

申请日：2009-03-09

Applicant: Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

Inventor： Naoshi Itabashi ,  Tsutomu Tetsuka ,  Atsushi Ito

IPC: C23F1/08

CPC classification number: H01J37/3299 ,  H01J37/32183 ,  H01J37/32211 ,  H01J37/32935

Abstract: A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.

Abstract translation: 等离子体处理装置包括其内侧壁绝缘的反应容器，设置在反应容器中的样品台和天线。 高频电力从等离子体发生电源供给到天线，将处理气体引入反应容器中并转换为等离子体，并且通过等离子体处理放置在样品台上的样品。 用于确保阻抗匹配的匹配单元插入在等离子体发生电源和包括天线的负载电路之间。 匹配单元包括用于测量负载电路侧的阻抗特性的传感器和用于根据传感器的测量改变匹配点和匹配轨道到达匹配单元的输入侧上的匹配点的单元。

公开(公告)号：US07396431B2

公开(公告)日：2008-07-08

申请号：US10953801

申请日：2004-09-30

Applicant: Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

Inventor： Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32211 ,  H01J37/32082 ,  H01J37/32192

Abstract: A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

Abstract translation: 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

公开(公告)号：US07392760B2

公开(公告)日：2008-07-01

申请号：US10989106

申请日：2004-11-16

Applicant: Yoji Taguchi ,  Maiko Yoshida ,  Kohta Kusaba ,  Kibatsu Shinohara ,  Munekazu Matsuo ,  Kazuhiro Watanabe

Inventor： Yoji Taguchi ,  Maiko Yoshida ,  Kohta Kusaba ,  Kibatsu Shinohara ,  Munekazu Matsuo ,  Kazuhiro Watanabe

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32211 ,  H01J37/32192

Abstract: A microwave-excited plasma processing apparatus shows a wide pressure range and a wide applicable electric power range for normal electric discharges as a result of using slits cut through a rectangular waveguide and having a profile that allows the electric field and the magnetic field of microwave to be formed uniformly right below the microwave introducing window below an microwave antenna. The microwave-excited plasma processing apparatus is characterized by having four elliptic slits cut through the wall of the rectangular waveguide that is held in contact with the microwave introducing window of the top wall of the vacuum chamber, the four elliptic slits being arranged respectively along the four sides of a substantial square.

Abstract translation: 微波激发等离子体处理装置显示出宽的压力范围和广泛的适用电力范围，作为通过使用通过矩形波导切割的狭缝的结果的普通放电的结果，并且具有允许微波的电场和微波的轮廓 在微波天线下面的微波引入窗口的下方均匀地形成。 微波激发等离子体处理装置的特征在于具有四个椭圆形狭缝，该椭圆形切口穿过矩形波导的壁，该矩形波导的壁与真空室的顶壁的微波引入窗口保持接触，四个椭圆形狭缝分别沿着 四面大面积的广场。

公开(公告)号：US20070144441A1

公开(公告)日：2007-06-28

申请号：US11318360

申请日：2005-12-23

Applicant: Mohammad Kamarehi ,  Ing-Yann Wang

Inventor： Mohammad Kamarehi ,  Ing-Yann Wang

IPC: C23F1/00 ,  C23C16/00

CPC classification number: H05H1/46 ,  H01J37/32211 ,  H01J37/32357

Abstract: An arrangement configured to contain plasma within plasma tube assembly of downstream microwave plasma system. Downstream microwave plasma system is configured to generate plasma within plasma-sustaining region of plasma tube assembly and channeling at least portion of plasma downstream to plasma processing chamber of downstream microwave plasma system. Arrangement includes a first hollow center electrically conductive disk surrounding a cylindrical structure that defines plasma passage of plasma tube assembly. Arrangement also includes a second hollow center electrically conductive disk also surrounding the cylindrical structure. Second hollow center electrically conductive disk is configured to be disposed in a spaced-apart relationship relative to first hollow center electrically conductive disk so as to form a first hollow center disk-shape interstitial region between first hollow center electrically conductive disc and second hollow center electrically conductive disc.

Abstract translation: 配置成在下游微波等离子体系统的等离子体管组件内容纳等离子体的装置。 下游微波等离子体系统被配置为在等离子体管组件的等离子体维持区域内产生等离子体，并且将下游的等离子体处理室的等离子体下游的至少部分通道化。 布置包括围绕限定等离子体管组件的等离子体通道的圆柱形结构的第一空心中心导电盘。 布置还包括也围绕圆柱形结构的第二空心中心导电盘。 第二空心中心导电盘被配置为相对于第一中空中心导电盘以间隔的关系设置，以便在第一中空中心导电盘和第二空心中心之间形成第一中空圆盘状间隙区域 导电盘。

公开(公告)号：US07210424B2

公开(公告)日：2007-05-01

申请号：US10843430

申请日：2004-05-12

Applicant: Yuri Nikolaevich Tolmachev ,  Sergiy Yakovlevich Navala ,  Dong-joon Ma ,  Dae-il Kim

Inventor： Yuri Nikolaevich Tolmachev ,  Sergiy Yakovlevich Navala ,  Dong-joon Ma ,  Dae-il Kim

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32211 ,  H01J37/321

Abstract: A high-density plasma processing apparatus includes a processing chamber, having a susceptor for supporting an object to be processed positioned therein and a dielectric window positioned on the processing chamber to form an upper surface of the processing chamber. A reaction gas injection device injects a reaction gas into an interior of the processing chamber. An inductively coupled plasma (ICP) antenna, which is installed on a center of the dielectric window, transfers radio frequency (RF) power from an RF power supply to the interior of the processing chamber. A waveguide guides a microwave generated by a microwave generator. A circular radiative tube, which is installed on the dielectric window around the ICP antenna and is connected to the waveguide, radiates a microwave toward the interior of the processing chamber via a plurality of slots formed through a bottom wall of the radiative tube.

Abstract translation: 高密度等离子体处理设备包括处理室，其具有用于支撑待处理物体的基座，以及位于处理室上的介电窗口，以形成处理室的上表面。 反应气体注入装置将反应气体注入到处理室的内部。 安装在电介质窗口的中心的电感耦合等离子体（ICP）天线将射频（RF）功率从RF电源传送到处理室的内部。 波导引导微波发生器产生的微波。 安装在ICP天线周围的电介质窗口并连接到波导的圆形辐射管通过经由辐射管的底壁形成的多个狭槽向处理室的内部辐射微波。

公开(公告)号：US07183514B2

公开(公告)日：2007-02-27

申请号：US10766973

申请日：2004-01-29

Applicant: Mohammad Kamarehi

Inventor： Mohammad Kamarehi

IPC: B23K10/00

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32357

Abstract: A remote plasma source employs a helical coil slow wave structure to couple microwave energy to a flowing gas to produce plasma for downstream substrate processing, such as photoresist stripping, ashing, or etching. The system also includes cooling structures for removing excess heat from the plasma source components.

Abstract translation: 远程等离子体源采用螺旋线圈慢波结构来将微波能量耦合到流动的气体，以产生用于下游衬底处理的等离子体，例如光刻胶剥离，灰化或蚀刻。 该系统还包括用于从等离子体源组件去除多余热量的冷却结构。

公开(公告)号：US20060065367A1

公开(公告)日：2006-03-30

申请号：US10953801

申请日：2004-09-30

Applicant: Lee Chen ,  Hiromitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

Inventor： Lee Chen ,  Hiromitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC: H01L21/306

CPC classification number: H01J37/32211 ,  H01J37/32082 ,  H01J37/32192

Abstract: A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

Abstract translation: 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。