Abstract:
A multi-indicia fluorescent display tube having a casing formed of a base plate and a cover plate bonded together, a plurality of pattern display sections provided on the base plate and each composed of a plurality of segment anodes each having a fluorescent layer thereon, a cathode stretched opposite to the pattern display sections, shield-electrode layers for preventing electrification, etc. provided on the portions of the base plate in the vicinity of the segment anodes, and a diffusion electrode for levelling the density of electron current flowing from the cathode to each of the segment anodes during operation by the influence of a positive potential applied thereto with respect to the cathode potential, said diffusion electrode being provided on the portion of the inside surface of the cover plate opposite to the pattern display sections or in the vicinity of the inside surface of the cover plate.
Abstract:
In an electronic device such as a fluorescent display tube which comprises an evacuated envelope, a plurality of cathode electrodes and an anode electrode, auxiliary electrodes are arranged between the cathode electrodes and the anode electrode. Each auxiliary electrode is impressed with AC potential superposed on DC potential and acts to disperse the electron flux emitted by the cathode electrodes in the lateral direction thus uniformly distributing the electron flux on the anode electrode.
Abstract:
A vacuum fluorescent display is disclosed having a grid plate substantially coplanar with the anode and which is controllable with conventional metal oxide semiconductor devices. Each digit of the display includes a segmented anode structure substantially surrounded by a control electrode or grid plate. At least one cathode is disposed adjacent the anode segments and control electrode such that the distance between the cathode and the control electrode is less than the distance between the cathode and any of the anode segments. Utilizing such a structure, a voltage on the order of about -5 volts on the control electrode is effective to cut off luminescence from any of the anode segments of that digit.
Abstract:
In a transparent resin wafer are confined units made up of a light-emitting diode capable of emitting infrared light and a luminescent stick consisting of infrared-excitable luminescent material and transparent resin, and seven of these units are arranged so as to indicate a numeral by seven light segments, so that when specified ones of the light-emitting diodes are lit, the respective sticks or strips combined therewith are excited by infrared light from the light-emitting diodes to indicate a desired numeral. By selecting a suitable luminescent material, any desired color is obtainable.
Abstract:
The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO3:Pr3+, Lu2Si2O2:Pr3+, LaPO4:Pr3+, YBO3:Pr3+ and YPO4:Bi3+.
Abstract:
Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.
Abstract:
The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO3:Pr3+, Lu2Si2O2:Pr3+, LaPO4:Pr3+, YBO3:Pr3+ and YPO4:Bi3+.
Abstract:
Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.
Abstract:
The present invention generally relates to an extraction structure for a UV lighting element. The present invention also relates to a UV lamp comprising such an extraction structure onto a substrate. The extraction structure comprises a plurality of nanostructures for anti-reflecting purposes. The nanostructures are grown on the top surface of at least one of the first and second side of the substrate.
Abstract:
The present invention relates to a field emission lighting arrangement, comprising an anode and a cathode, where the shape of the cathode is selected based on the shape of a evacuated envelope in which the anode and cathode is provided. The inventive shape of cathode allows for an improved uniformity of an electric field provided between the anode and cathode during operation of the field emission lighting arrangement. The invention also relates to a corresponding method for selecting a shape of such a cathode.