Abstract:
Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.
Abstract:
A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.
Abstract:
A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.
Abstract:
Disclosed is a light emitting device. The light emitting device includes a substrate, a semiconductor layer on the substrate, and an electrode on the semiconductor layer, wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein the predetermined tilt angle is an obtuse angle, and wherein a side surface of the semiconductor layer disposes vertically.
Abstract:
A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate.
Abstract:
A semiconductor light emitting device, including a reflective electrode layer; a second conductive semiconductor layer formed on a portion of a top surface of the reflective electrode layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; a first electrode formed under one portion of the first conductive semiconductor layer; and an insulating layer having a lower portion, a first upwardly directed side wall portion at a first side of the first electrode and a second upwardly directed side wall portion at a second side of the first electrode that is opposite to the first side. At least one portion of the lower portion is between the second conductive semiconductor layer and the reflective electrode layer.
Abstract:
A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.
Abstract:
Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes a stepped structure having a second top surface stepped lower than the first top surface thereof; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductive type semiconductor layer; an electrode electrically connected with the first conductive type semiconductor layer; an electrode layer under the second conductive type semiconductor layer; and a protective layer disposed on a periphery portion of a lower surface of the second conductive type semiconductor layer.
Abstract:
A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.
Abstract:
The apparatus for detecting arc occurred in chamber for plasma treatment used for manufacturing semiconductor or LCD panel comprises, a sensor module for sensing the arc; a processor module for processing data from the sensor module; wherein the sensor module includes RGB color sensor for sensing color data of the arc occurred in the chamber, the RGB color sensor is a sensor sensable at least one of red color or green color or blue color of the arc, the apparatus detects the arc by sensing data of color and chroma and brightness of the arc.