Light emitting device and light emitting device package having the same
    41.
    发明授权
    Light emitting device and light emitting device package having the same 有权
    发光器件和具有该发光器件的发光器件封装

    公开(公告)号:US08421112B2

    公开(公告)日:2013-04-16

    申请号:US12986592

    申请日:2011-01-07

    Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode layer under the second conductive semiconductor layer; an electrode including a top surface making contact with a part of a bottom surface of the first conductive semiconductor layer; and an insulating member for covering an outer peripheral surface of the electrode, wherein a part of the insulating member extends into a region between the second conductive semiconductor layer and the first electrode layer from a bottom surface of the electrode.

    Abstract translation: 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括发光结构,其包括第一导电半导体层,第一导电半导体层下方的有源层和有源层下的第二导电半导体层; 第二导电半导体层下面的第一电极层; 电极,其包括与所述第一导电半导体层的底表面的一部分接触的顶表面; 以及用于覆盖电极的外周面的绝缘构件,其中绝缘构件的一部分从电极的底面延伸到第二导电半导体层和第一电极层之间的区域中。

    Semiconductor light emitting device including bonding layer and semiconductor light emitting device package
    43.
    发明授权
    Semiconductor light emitting device including bonding layer and semiconductor light emitting device package 有权
    半导体发光器件包括结合层和半导体发光器件封装

    公开(公告)号:US08154046B2

    公开(公告)日:2012-04-10

    申请号:US13044721

    申请日:2011-03-10

    Abstract: A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.

    Abstract translation: 提供了一种发光器件。 发光器件包括:导电支撑衬底; 导电支撑基板上的接合层; 接合层上的反射层; 和反射层上的发光结构层。 所述接合层包括在所述导电性支撑基板上的焊料接合层,以及所述焊料接合层,所述焊料接合层,所述扩散阻挡层和所述粘附层的扩散阻挡层和粘附层中的至少一个由 金属或其杨氏模量为9GPa至200GPa的合金。

    LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURE OF THE SAME
    44.
    发明申请
    LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURE OF THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号:US20120074382A1

    公开(公告)日:2012-03-29

    申请号:US13308146

    申请日:2011-11-30

    Applicant: Sang Youl LEE

    Inventor: Sang Youl LEE

    Abstract: Disclosed is a light emitting device. The light emitting device includes a substrate, a semiconductor layer on the substrate, and an electrode on the semiconductor layer, wherein the substrate has at least one side surface having a predetermined tilt angle with respect to a bottom surface of the substrate, wherein the predetermined tilt angle is an obtuse angle, and wherein a side surface of the semiconductor layer disposes vertically.

    Abstract translation: 公开了一种发光器件。 发光器件包括衬底,衬底上的半导体层和半导体层上的电极,其中衬底具有相对于衬底的底表面具有预定倾斜角的至少一个侧表面,其中预定 倾斜角是钝角,并且其中半导体层的侧表面垂直布置。

    Semiconductor light emitting device
    45.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US08120042B2

    公开(公告)日:2012-02-21

    申请号:US12506771

    申请日:2009-07-21

    CPC classification number: H01L33/0095 H01L33/22 H01L33/32 H01L2933/0091

    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate.

    Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和发光结构。 基板在其至少一个侧表面上包括多个不连续的熔接点。 发光结构在基板上包括多个化合物半导体层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    46.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20110284823A1

    公开(公告)日:2011-11-24

    申请号:US13112322

    申请日:2011-05-20

    Applicant: Sang Youl LEE

    Inventor: Sang Youl LEE

    CPC classification number: H01L33/385 H01L33/0079 H01L33/44

    Abstract: A semiconductor light emitting device, including a reflective electrode layer; a second conductive semiconductor layer formed on a portion of a top surface of the reflective electrode layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; a first electrode formed under one portion of the first conductive semiconductor layer; and an insulating layer having a lower portion, a first upwardly directed side wall portion at a first side of the first electrode and a second upwardly directed side wall portion at a second side of the first electrode that is opposite to the first side. At least one portion of the lower portion is between the second conductive semiconductor layer and the reflective electrode layer.

    Abstract translation: 一种半导体发光器件,包括反射电极层; 形成在所述反射电极层的顶表面的一部分上的第二导电半导体层; 形成在所述第二导电半导体层上的有源层; 形成在所述有源层上的第一导电半导体层; 形成在所述第一导电半导体层的一部分下的第一电极; 以及具有下部的绝缘层,在第一电极的第一侧的第一向上指向的侧壁部分和与第一侧相对的第一电极的第二侧的第二向上指向侧壁部分。 下部的至少一部分在第二导电半导体层和反射电极层之间。

    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME
    48.
    发明申请
    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME 有权
    发光装置和具有该发光装置的发光装置包装

    公开(公告)号:US20110193058A1

    公开(公告)日:2011-08-11

    申请号:US13024883

    申请日:2011-02-10

    Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes a stepped structure having a second top surface stepped lower than the first top surface thereof; an insulating layer disposed on a lateral surface of the light emitting structure and the second top surface of the first conductive type semiconductor layer; an electrode electrically connected with the first conductive type semiconductor layer; an electrode layer under the second conductive type semiconductor layer; and a protective layer disposed on a periphery portion of a lower surface of the second conductive type semiconductor layer.

    Abstract translation: 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层,第二导电类型半导体层和有源层的发光结构,其中第一导电类型半导体层 包括阶梯式结构,其具有比第一顶表面低的第二顶表面; 绝缘层,设置在所述发光结构的侧表面和所述第一导电类型半导体层的所述第二顶表面上; 与第一导电型半导体层电连接的电极; 第二导电型半导体层下的电极层; 以及设置在所述第二导电型半导体层的下表面的周边部分上的保护层。

    LIGHT EMITTING APPARATUS
    49.
    发明申请
    LIGHT EMITTING APPARATUS 有权
    发光装置

    公开(公告)号:US20110133242A1

    公开(公告)日:2011-06-09

    申请号:US12964161

    申请日:2010-12-09

    Abstract: A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

    Abstract translation: 一种发光器件,包括接触层,接触层上的阻挡层,与阻挡层相邻的保护层,阻挡层上的发光体以及耦合到光发射器的电极层。 电极层与阻挡层和保护层重叠,并且阻挡层具有导电性,其基本上阻挡来自光发射器的电流沿朝向接触层的方向。 此外,保护层可以是导电的,以允许电流流到光发射器或不导电以阻止电流从发光体朝向接触层流动。

    APPARATUS AND METHOD FOR DETECTING ARCS
    50.
    发明申请
    APPARATUS AND METHOD FOR DETECTING ARCS 失效
    用于检测ARCS的装置和方法

    公开(公告)号:US20110040508A1

    公开(公告)日:2011-02-17

    申请号:US12772565

    申请日:2010-05-03

    Abstract: The apparatus for detecting arc occurred in chamber for plasma treatment used for manufacturing semiconductor or LCD panel comprises, a sensor module for sensing the arc; a processor module for processing data from the sensor module; wherein the sensor module includes RGB color sensor for sensing color data of the arc occurred in the chamber, the RGB color sensor is a sensor sensable at least one of red color or green color or blue color of the arc, the apparatus detects the arc by sensing data of color and chroma and brightness of the arc.

    Abstract translation: 在用于制造半导体或LCD面板的等离子体处理室中检测电弧的装置包括:用于感测电弧的传感器模块; 处理器模块,用于处理来自传感器模块的数据; 其中传感器模块包括RGB颜色传感器,用于感测在室中发生的电弧的颜色数据,RGB颜色传感器是可感测到电弧的红色或绿色或蓝色中的至少一种的传感器,该装置通过 感测电弧的颜色和色度和亮度的数据。

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