公开(公告)号：US20180076358A1

公开(公告)日：2018-03-15

申请号：US15820002

申请日：2017-11-21

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Chien-Chih LIAO ,  Tzu-Yao TSENG ,  Tsun-Kai KO ,  Chien-Fu SHEN

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L33/405

Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.

公开(公告)号：US20170054056A1

公开(公告)日：2017-02-23

申请号：US15345185

申请日：2016-11-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Ching-San TAO ,  Chen OU ,  Min-Hsun HSIEH ,  Chao-Hsing CHEN

IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/22

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电型半导体层的第一部分上的第一电介质层; 第一透明导电氧化物层，形成在第一介电层上和第二导电类型半导体层的第二部分上，第一透明导电氧化物层包括与第一电介质层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

公开(公告)号：US20160197237A1

公开(公告)日：2016-07-07

申请号：US15067517

申请日：2016-03-11

Applicant: EPISTAR CORPORATION

Inventor： Hong-Che CHEN ,  Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Yu-Chen YANG ,  Jia-Kuen WANG ,  Chih-Nan LIN

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract translation: 发光装置包括包括多个凹部和台面的发光半导体堆叠，所述多个凹部中的每一个包括底表面，并且所述台面包括上表面; 形成在台面的上表面上的第一电极; 分别形成在所述多个凹部的底面上的多个第二电极; 形成在所述发光半导体堆叠上并与所述第一电极接触的第一电极焊盘; 形成在所述发光半导体堆叠上并与所述多个第二电极接触的第二电极焊盘; 第一绝缘层，包括多个通道以暴露所述多个第二电极; 以及形成在所述第一绝缘层上的多个空间的第二绝缘层，其中所述多个空间被所述第一电极焊盘覆盖。

公开(公告)号：US20150236208A1

公开(公告)日：2015-08-20

申请号：US14705453

申请日：2015-05-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/60

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures.

Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 多个突出结构; 半导体层中的多个倾斜沟槽序列并分别容纳多个突起结构; 所述第二半导体层上的电介质层和所述多个倾斜沟槽的内侧壁，其中所述电介质层包括垂直于所述半导体层序列的厚度方向的表面; 沿着所述多个倾斜沟槽的内侧壁形成并延伸到所述电介质层的表面的金属层，其中所述金属层通过所述电介质层与所述第二半导体层绝缘; 以及形成在所述多个突出结构上的第一电极。

公开(公告)号：US20140159091A1

公开(公告)日：2014-06-12

申请号：US14098911

申请日：2013-12-06

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

IPC: H01L33/62

CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

Abstract: A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.

Abstract translation: 发光元件包括：包含第一半导体层的发光半导体堆叠; 在所述第一半导体层上的第二半导体层; 以及在所述第一半导体层和所述第二半导体层之间的发光层; 在所述第一半导体层上的第一电极; 在所述发光半导体堆叠上的第一保护层，并且包括第一通孔; 以及在所述第一保护层上的导电接触层，并且通过所述第一通孔电连接到所述第一电极。

公开(公告)号：US20240395975A1

公开(公告)日：2024-11-28

申请号：US18789312

申请日：2024-07-30

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU

IPC: H01L33/40 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y115/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

公开(公告)号：US20230317765A1

公开(公告)日：2023-10-05

申请号：US18128327

申请日：2023-03-30

Applicant: EPISTAR CORPORATION

Inventor： Yong-Yang CHEN ,  Chao-Hsing CHEN ,  Chi-Shiang HSU

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A light-emitting device comprises a plurality of light-emitting elements, comprising a first group light-emitting elements and a second group light-emitting elements; a trench separating the plurality of light-emitting units; a first electrode pad covering the first group light-emitting elements and located on the trench; a second electrode pad covering the second group light-emitting elements and located on the trench; and a cavity located on the trench, formed between the first electrode pad and the protective layer or formed between the second electrode pad and the protective layer.

公开(公告)号：US20230215998A1

公开(公告)日：2023-07-06

申请号：US18089727

申请日：2022-12-28

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Meng-Hsiang HONG ,  Chi-Shiang HSU ,  Yen-Liang KUO ,  Chien-Ya HUNG ,  Yong-Yang CHEN ,  Yu-Ling LIN ,  Xue-Cheng YAO

IPC: H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/40 ,  H01L33/38

CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/405 ,  H01L33/38 ,  H01L33/32

Abstract: A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.

公开(公告)号：US20220367562A1

公开(公告)日：2022-11-17

申请号：US17875068

申请日：2022-07-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Yong-Yang CHEN

IPC: H01L27/15

Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emitting unit without covering the first insulating layer opening on the second light-emitting unit; a first electrode pad covering a part of the plurality of the light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.

公开(公告)号：US20210336090A1

公开(公告)日：2021-10-28

申请号：US17237825

申请日：2021-04-22

Applicant: EPISTAR CORPORATION

Inventor： Jhih-Yong YANG ,  Hsin-Ying WANG ,  De-Shan KUO ,  Chao-Hsing CHEN ,  Yi-Hung LIN ,  Meng-Hsiang HONG ,  Kuo-Ching HUNG ,  Cheng-Lin LU

IPC: H01L33/46 ,  H01L27/15 ,  H01L33/10 ,  H01L33/62 ,  H01L33/38

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.