公开(公告)号：US20210202797A1

公开(公告)日：2021-07-01

申请号：US17185551

申请日：2021-02-25

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.

公开(公告)号：US20210119084A1

公开(公告)日：2021-04-22

申请号：US17136714

申请日：2020-12-29

Applicant: EPISTAR CORPORATION

Inventor： Tzung-Shiun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38

Abstract: An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, covering the current blocking region and/or a surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.

公开(公告)号：US20200243714A1

公开(公告)日：2020-07-30

申请号：US16749884

申请日：2020-01-22

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Wen-Hsiang LIN ,  Pei-Chi CHIANG ,  Yi-Wen KU

IPC: H01L33/10 ,  F21V8/00 ,  H01L33/00 ,  H01L33/20

Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.

公开(公告)号：US20190312179A1

公开(公告)日：2019-10-10

申请号：US16446059

申请日：2019-06-19

Applicant: EPISTAR CORPORATION

Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/44 ,  H01L33/24 ,  H01L33/62 ,  H01L33/20 ,  H01L33/54

Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.

公开(公告)号：US20180233629A1

公开(公告)日：2018-08-16

申请号：US15889888

申请日：2018-02-06

Applicant: Epistar Corporation

Inventor： Tzung-Shiun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN

IPC: H01L33/36 ,  H01L33/62

Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion and comprising an elongate shape; and a first electrode formed above the current blocking region and electrically connecting to the semiconductor stack through the first opening.

公开(公告)号：US20180212123A1

公开(公告)日：2018-07-26

申请号：US15874501

申请日：2018-01-18

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Yu-Rui LIN ,  Chen OU ,  Hsin-Ying WANG ,  Hui-Chun YEH

IPC: H01L33/62

CPC classification number: H01L33/62 ,  F21K9/232 ,  F21Y2115/10 ,  H01L23/60 ,  H01L33/0016 ,  H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38

Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.

公开(公告)号：US20180145223A1

公开(公告)日：2018-05-24

申请号：US15862368

申请日：2018-01-04

Applicant: EPISTAR CORPORATION

Inventor： Hong-Che CHEN ,  Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Yu-Chen YANG ,  Jia-Kuen WANG ,  Chih-Nan LIN

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

公开(公告)号：US20170141260A1

公开(公告)日：2017-05-18

申请号：US15350893

申请日：2016-11-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

公开(公告)号：US20160372635A1

公开(公告)日：2016-12-22

申请号：US15256263

申请日：2016-09-02

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/22 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.

Abstract translation: 光电子半导体器件包括衬底; 包括第一导电层，第二导电层和第一导电层与第二导电层之间的转换单元的半导体系统，其中第一导电层比第二导电层更靠近基板，并且 所述第二导电层包括垂直于所述半导体系统的厚度方向的顶表面，并且在所述半导体系统的俯视图中，所述第一导电层的轮廓围绕所述第二导电层的轮廓; 在半导体系统的第一导电层上的第一电连接器; 第二电连接器，包括形成在半导体系统的第二导电层上的形状; 以及形成在所述第二导电层的顶表面上并且在所述半导体系统的顶视图中在所述第二导电层的轮廓的内侧具有外周的接触层，其中所述接触层包括暴露所述第二导电层的不连续区域 第二导电层的顶表面沿着第二电连接器的形状形成不连续区域。

公开(公告)号：US20160005926A1

公开(公告)日：2016-01-07

申请号：US14791949

申请日：2015-07-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Chien-Chih LIAO ,  Tzu-Yao TSENG ,  Tsun-Kai KO ,  Chien-Fu SHEN

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/405

Abstract: An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.

Abstract translation: 一种光电子器件，包括：包括四个边界的第一半导体层，由两个相邻边界形成的拐角，第一表面和与第一表面相对的第二表面; 形成在第一半导体层的第一表面上的第二半导体层; 形成在所述第二半导体层上的第二导电型电极; 以及形成在第一表面上的两个第一导电型电极，其中第一导电类型电极被分离并形成图案。