公开(公告)号：US10571681B2

公开(公告)日：2020-02-25

申请号：US15682671

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

公开(公告)号：US09934966B2

公开(公告)日：2018-04-03

申请号：US15189060

申请日：2016-06-22

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Klemens Pruegl

IPC: H01L21/02 ,  H01L21/768 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/16 ,  H01L21/04 ,  H01L21/225 ,  H01L29/04 ,  H01L29/06 ,  H01L29/167

CPC classification number: H01L21/02524 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0405 ,  H01L21/2254 ,  H01L21/7685 ,  H01L29/04 ,  H01L29/0669 ,  H01L29/1075 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/66037 ,  H01L29/778

Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

公开(公告)号：US09915707B2

公开(公告)日：2018-03-13

申请号：US15433524

申请日：2017-02-15

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: H01L21/00 ,  G01R33/00 ,  G01R33/09 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

公开(公告)号：US20170371148A1

公开(公告)日：2017-12-28

申请号：US15682671

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

CPC classification number: G02B26/001 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/047 ,  B81C1/00158 ,  B81C1/00476 ,  B81C1/00539 ,  G02B26/007

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

公开(公告)号：US09733107B2

公开(公告)日：2017-08-15

申请号：US14535537

申请日：2014-11-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Juergen Zimmer ,  Klemens Pruegl

IPC: G01R33/09 ,  G01R33/02 ,  G01D5/16 ,  H04L12/877 ,  H04L12/911 ,  H04L12/927 ,  G01B7/30 ,  H04L12/863

CPC classification number: G01D5/16 ,  G01B7/30 ,  G01R33/02 ,  G01R33/09 ,  G01R33/093 ,  H04L47/525 ,  H04L47/6215 ,  H04L47/72 ,  H04L47/781 ,  H04L47/805

Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.

公开(公告)号：US09620707B2

公开(公告)日：2017-04-11

申请号：US14688177

申请日：2015-04-16

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Andreas Strasser ,  Wolfgang Raberg ,  Klemens Pruegl

IPC: H01L21/02 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.

公开(公告)号：US20160351800A1

公开(公告)日：2016-12-01

申请号：US15215631

申请日：2016-07-21

Applicant: Infineon Technologies AG

Inventor： Stefan Kolb ,  Klemens Pruegl ,  Juergen Zimmer

IPC: H01L43/14 ,  H01L43/06 ,  H01L43/08 ,  H01L43/04

CPC classification number: H01L27/22 ,  G01R33/07 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/552 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。

公开(公告)号：US09449873B2

公开(公告)日：2016-09-20

申请号：US13921284

申请日：2013-06-19

Applicant: Infineon Technologies AG

Inventor： Guenther Ruhl ,  Klemens Pruegl

IPC: H01L21/768 ,  H01L23/498 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/16

CPC classification number: H01L21/02524 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0405 ,  H01L21/2254 ,  H01L21/7685 ,  H01L29/04 ,  H01L29/0669 ,  H01L29/1075 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/66037 ,  H01L29/778

Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

Abstract translation: 在各种实施例中，提供了一种处理载体的方法。 用于处理载体的方法可以包括：在载体上形成第一催化金属层; 在所述第一催化金属层上形成源层; 在所述源层上形成第二催化金属层，其中所述第二催化金属层的厚度大于所述第一催化金属层的厚度; 并且随后进行退火以使源层的材料与源层的扩散材料形成与载体表面相邻的界面层的扩散。

公开(公告)号：US20150362722A1

公开(公告)日：2015-12-17

申请号：US14722552

申请日：2015-05-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Roland Meier ,  Klemens Pruegl ,  Bernhard Winkler ,  Thomas Popp ,  Raimund Foerg

IPC: G02B26/00 ,  B81C1/00

CPC classification number: G02B26/001 ,  B81C1/00158 ,  B81C1/00539 ,  G02B26/007

Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Abstract translation: 实施例涉及微机电系统（MEMS），更具体地涉及包括用于例如显示装置的像素的膜结构。 在实施例中，膜结构包括在硅衬底上形成的腔上方的单晶硅膜。 膜结构可以包括光干涉结构，其根据膜和衬底之间的可变距离透射或反射不同波长的光。 还公开了相关设备，系统和方法。

公开(公告)号：US20150355295A1

公开(公告)日：2015-12-10

申请号：US14830195

申请日：2015-08-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Juergen Zimmer ,  Klemens Pruegl ,  Olaf Kuehn ,  Andreas Strasser ,  Ralf-Rainer Schledz ,  Norbert Thyssen

IPC: G01R33/09 ,  H01L43/12

CPC classification number: G01R33/0052 ,  G01R33/09 ,  G01R33/093 ,  G01R33/096 ,  G01R33/098 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract translation: 实施例涉及具有非常高的形状各向异性的xMR传感器。 实施例还涉及xMR堆叠的新结构化过程，以实现非常高的形状各向异性，而不会在性能相关的磁场敏感层系统中产生化学影响，同时在晶片上提供相对均匀的结构宽度，在实施例中可降低至约100nm。 实施例还可以提供具有性能相关自由层系统的侧壁的xMR堆叠，其平滑和/或限定的横向几何形状对于在晶片上实现均匀的磁性行为是重要的。