公开(公告)号：US07514942B2

公开(公告)日：2009-04-07

申请号：US11528785

申请日：2006-09-27

Applicant: Valluri Rao

Inventor： Valluri Rao

IPC: G01R31/02

CPC classification number: B81C1/00031 ,  B81C2201/0154 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/2049

Abstract: Patterning of microelectronic and micromechanical devices is described using probes. In one example, a plurality of probe tips are driven into a processing layer of a substrate. The probe tips are carried by movable sleds. The sleds are moved to write patterns into the processing layer using the probes, and the processing layer is processed to form features on the substrate.

Abstract translation: 使用探针描述微电子和微机械器件的图案化。 在一个示例中，多个探针尖端被驱动到衬底的处理层中。 探头尖端由可动滑板承载。 使用探针将滑板移动到将图案写入处理层中，并且处理层被处理以在基板上形成特征。

公开(公告)号：US20230382714A1

公开(公告)日：2023-11-30

申请号：US18201710

申请日：2023-05-24

Applicant: DB HITEK CO., LTD.

Inventor： Min Hyun JUNG ,  Joo Hyeon LEE

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81B2203/0353 ,  B81B2203/04 ,  B81C2201/0154 ,  B81C2201/014 ,  B81C2201/0133 ,  B81C2201/0166 ,  B81C2201/0164

Abstract: A MEMS microphone includes a substrate having a cavity, a diaphragm disposed above the cavity and having a ventilation path, and a back plate disposed above the diaphragm and having a plurality of air holes. The ventilation path includes a plurality of slits extending in a circumferential direction.

公开(公告)号：US09944517B2

公开(公告)日：2018-04-17

申请号：US14883745

申请日：2015-10-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. Luce ,  Anthony K. Stamper

IPC: H01H11/00 ,  H01H49/00 ,  B81C1/00 ,  H01H59/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first fixed electrode and a second fixed electrode, forming a first cantilevered electrode aligned vertically over the first fixed electrode, forming a second cantilevered electrode aligned vertically over the second fixed electrode, and which has an end that overlaps and is operable to directly contact an end of the first cantilevered electrode upon an application of a voltage to at least one of the first fixed electrode and the second fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

公开(公告)号：US20180093884A1

公开(公告)日：2018-04-05

申请号：US15809066

申请日：2017-11-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01H11/00 ,  H01H49/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode, forming a second cantilevered electrode over an electrode and operable to contact the first cantilevered electrode upon an application of a voltage to the electrode, and forming an arm on the first cantilevered electrode with an extending protrusion extending upward from an upper surface of the arm.

公开(公告)号：US20180016137A1

公开(公告)日：2018-01-18

申请号：US15717187

申请日：2017-09-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H49/00 ,  H01H59/00 ,  H01H11/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: An approach includes a method of fabricating a switch. The approach includes forming a first cantilevered electrode over a first fixed electrode, forming a second cantilevered electrode with an end that overlaps the first cantilevered electrode, forming a third cantilevered electrode operable to directly contact the first cantilevered electrode upon an application of a voltage to a second fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.

公开(公告)号：US09718682B2

公开(公告)日：2017-08-01

申请号：US15222006

申请日：2016-07-28

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Peng Ren

IPC: H01L21/00 ,  B81C1/00 ,  H01L23/48 ,  H01L21/768 ,  H01L21/67 ,  H01L21/687 ,  H01L23/00

CPC classification number: B81C1/00801 ,  B81C2201/0154 ,  B81C2201/05 ,  B81C2203/0778 ,  H01L21/67063 ,  H01L21/6715 ,  H01L21/687 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02317 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/13024

Abstract: A method for fabricating a semiconductor structure includes providing a substrate with a first surface and a second surface, wherein at least one soldering pad is formed on the first surface of the substrate. The method also includes forming at least one via to expose each soldering pad by etching the substrate from the second surface, forming a seed layer to cover the second surface of the substrate and the sidewall and the bottom surfaces of each via, and then forming a redistribution metal layer over a portion of the seed layer formed on the sidewall and the bottom surfaces of each via and the second surface of the substrate surrounding each via. The method further includes alternately performing a pre-wetting process and a chemical etching process to completely remove the portion of the seed layer not covered by the redistribution metal layer.

公开(公告)号：US20170081176A1

公开(公告)日：2017-03-23

申请号：US14981461

申请日：2015-12-28

Applicant: HANGZHOU SILAN MICROELECTRONICS CO., LTD. ,  HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD

Inventor： Feng JI ,  Yongxiang WEN ,  Chen LIU ,  Hao ZHOU

IPC: B81B7/00 ,  H01L23/26 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0384 ,  B81C1/00285 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0154 ,  B81C2201/0198 ,  B81C2203/0109 ,  H01L23/26

Abstract: The invention provides a MEMS device, semiconductor device, and method for manufacturing the same. The MEMS device comprises an enclosed cavity, the cavity having an inner wall extending in a first plane, the inner wall including a film deposition region for depositing a getter film, wherein one or more grooves are formed in the film deposition region, the angle between the sidewalls of the grooves and the first plane is more than 0° and less than 180°, and the getter film overlays the sidewall of the grooves. The invention can form the getter film in a smaller incident flux angle with a common sputtering, evaporation apparatus, that is, form the porous, high roughness getter.

公开(公告)号：US20160145097A1

公开(公告)日：2016-05-26

申请号：US15012314

申请日：2016-02-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: B81C1/00

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US09153437B2

公开(公告)日：2015-10-06

申请号：US14009000

申请日：2012-03-30

Applicant: Marco Rolandi ,  Hideki Sato ,  Stephanie Vasko ,  Michael Brasino ,  Adnan Kapetanovic ,  Vamsi Talla

Inventor： Marco Rolandi ,  Hideki Sato ,  Stephanie Vasko ,  Michael Brasino ,  Adnan Kapetanovic ,  Vamsi Talla

IPC: H01L21/36 ,  H01L21/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00 ,  B81C1/00

CPC classification number: H01L21/02636 ,  B81C1/00492 ,  B81C2201/0154 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/02532 ,  H01L21/02656

Abstract: Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g., a conductive “stamp”) spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.

Abstract translation: 提供了形成无机纳米结构的方法。 这些方法通过将位于衬底上方的纳米级的写入电极（例如，导电“印模”）定位，使得前体在两者之间，形成无机纳米结构。 在写入电极和衬底之间施加电场，电压偏置，离子电流或电子电流在写入电极的区域中将前体转化为无机固体材料（例如半导体，例如硅或锗） 。

公开(公告)号：US08968673B2

公开(公告)日：2015-03-03

申请号：US13805491

申请日：2011-06-29

Applicant: Vincent Agache ,  Antoine Hoang ,  Françoise Vinet

Inventor： Vincent Agache ,  Antoine Hoang ,  Françoise Vinet

IPC: G01N33/00 ,  G03F7/24 ,  B81C1/00 ,  F04B19/00

CPC classification number: G03F7/24 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2201/06 ,  B81C1/00206 ,  B81C2201/0154 ,  F04B19/006

Abstract: The present invention relates to a method for functionalizing fluid lines (1b) in a micromechanical device, the walls of which include an opaque layer. For this purpose, the invention provides a method for functionalizing a micromechanical device provided with a fluid line including a peripheral wall (5) having a surface (2) outside the line and an inner surface (3) defining a space (1b) in which a fluid can circulate, the peripheral wall at least partially including a silicon layer (5a). The method includes the following steps: a) providing a device, the peripheral wall (5) of which at least partially includes a silicon layer (5a) having, at least locally, a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm; c) silanizing at least the inner surface of the fluid line; d) the localized, selective photo-deprotection on at least the inner surface of the silanized device by exposing the peripheral wall (5) at the point at which said wall has a thickness (e) of more than 100 nm and less than 200 nm, advantageously of 160 to 180 nm.

Abstract translation: 本发明涉及一种在微机械装置中功能化流体管线（1b）的方法，该方法的壁包括不透明层。 为此，本发明提供了一种功能化微机械装置的方法，该微机械装置具有流体管线，该流体管线包括在管线外部具有表面（2）的周壁（5）和限定空间（1b）的内表面（3） 流体可以循环，周壁至少部分地包括硅层（5a）。 该方法包括以下步骤：a）提供一种器件，其外围壁（5）至少部分地包括硅层（5a），该硅层至少局部地具有大于100nm的厚度（e）并且小于 200nm，有利地为160〜180nm; c）至少使流体管线的内表面硅烷化; d）通过在所述壁的厚度（e）大于100nm且小于200nm的点处暴露外围壁（5），至少在硅烷化装置的内表面上进行局部选择性光 - 去保护 ，有利地为160至180nm。