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    Electron beam mask substrate, electron beam mask blank, electron beam mask, and fabrication method thereof
    41.
    发明申请
    Electron beam mask substrate, electron beam mask blank, electron beam mask, and fabrication method thereof 审中-公开
    电子束掩模基板，电子束掩模基板，电子束掩模及其制造方法

    公开(公告)号：US20040023509A1

    公开(公告)日：2004-02-05

    申请号：US10442051

    申请日：2003-05-21

    Applicant: HOYA CORPORATION

    Inventor： Isao Amemiya

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  G03F1/20 ,  H01J2237/0453 ,  H01J2237/31788 ,  H01J2237/31794

    Abstract: An electron beam mask substrate including a substrate layer to form a membrane layer support through backside etching, an etching stopper layer formed on the substrate layer, and a membrane layer formed on the etching stopper layer. When the tensile stress of the membrane layer is reduced with the reduction in the thickness of the layer and when the membrane part having the membrane layer and the etching stopper layer is deformed during backside processing owing to the influence of the stress of the etching stopper layer thereon, and/or when the membrane layer is deformed within a range not satisfying the mask pattern positioning accuracy during removal of the etching stopper layer, then the membrane stress of the membrane layer and the membrane stress of the etching stopper layer are so correlated that the membrane part is not deformed during backside processing, and/or so correlated that the membrane layer is not deformed over the range satisfying the mask pattern positioning accuracy during removal of the etching stopper layer. This allows for the production of a tough electron beam mask for which the membrane stress of the etching stopper is specifically so controlled as to reduce the deformation of the layer structure, and to provide an electron beam mask substrate and an electron beam mask blank which are for producing the electron beam mask.

    Abstract translation: 电子束掩模基板，其包括通过背面蚀刻形成膜层的基板层，形成在基板层上的蚀刻停止层，以及形成在蚀刻停止层上的膜层。 当膜层的拉伸应力随着层的厚度的减小而减小，并且当由于蚀刻停止层的应力的影响而在背面加工期间具有膜层和蚀刻阻挡层的膜部分变形时 和/或当膜层在除去蚀刻阻挡层之前在不满足掩模图案定位精度的范围内变形时，膜层的膜应力和蚀刻停止层的膜应力如此相关，使得 膜部分在背面处理期间不变形，和/或如此相关，使得膜层在去除蚀刻停止层期间在满足掩模图案定位精度的范围内不变形。 这允许制造坚固的电子束掩模，其特别地控制蚀刻阻挡层的膜应力以减小层结构的变形，并提供电子束掩模基板和电子束掩模坯 用于产生电子束掩模。

    Method for making CMOS-based monolithic micro electromechanical system (MEMS) integrated circuits and integrated circuits made thereby
    42.
    发明申请
    Method for making CMOS-based monolithic micro electromechanical system (MEMS) integrated circuits and integrated circuits made thereby 审中-公开
    制造基于CMOS的单片微机电系统（MEMS）集成电路和集成电路的方法

    公开(公告)号：US20030104649A1

    公开(公告)日：2003-06-05

    申请号：US10218902

    申请日：2002-08-15

    Inventor： Mehmet Ozgur ,  Mona Elwakkad Zaghloul

    IPC: H01L021/00 ,  H01L029/82 ,  H01L029/00

    CPC classification number: B81C1/00246 ,  B81B2201/0221 ,  B81C1/00801 ,  B81C2201/0167 ,  B81C2203/0735

    Abstract: A method is provided for fabricating a CMOS based micro-electromechanical system (MEMS) integrated circuit. A CMOS circuit layout is fabricated on a silicon substrate. A first thick film photo resist layer is then deposited on the CMOS circuit layout. To prevent oxidation from occurring between aluminum and gold, a seed layer is applied to the first thick film photo resist layer. A mold is then formed by selectively depositing a second thick film photo resist layer on portions of the seed layer so that a conductive layer can be applied to the mold. Portions of the seed layer are then removed and a stress compensation material is applied to the conductive layer. A back side surface of the silicon substrate is then etched to remove areas not covered by a mask, and the first thick film photo resist layer is removed via openings in the CMOS circuit layout.

    Abstract translation: 提供了一种用于制造基于CMOS的微机电系统（MEMS）集成电路的方法。 在硅衬底上制造CMOS电路布局。 然后在CMOS电路布局上沉积第一厚膜光致抗蚀剂层。 为了防止在铝和金之间发生氧化，将种子层施加到第一厚膜光致抗蚀剂层。 然后通过在种子层的部分上选择性地沉积第二厚膜光致抗蚀剂层来形成模具，使得可以将导电层施加到模具。 然后去除种子层的一部分，并且将应力补偿材料施加到导电层。 然后蚀刻硅衬底的背侧表面以除去未被掩模覆盖的区域，并且通过CMOS电路布局中的开口去除第一厚膜光致抗蚀剂层。

    Actuator
    43.
    发明申请
    Actuator 失效
    执行器

    公开(公告)号：US20020149294A1

    公开(公告)日：2002-10-17

    申请号：US10121342

    申请日：2002-04-12

    Applicant: OLYMPUS OPTICAL CO., LTD.

    Inventor： Kazuya Matsumoto ,  Masahiro Katashiro ,  Hiroshi Miyajima ,  Toshihiko Isokawa

    IPC: H02N001/00

    CPC classification number: G02B26/0841 ,  B81B3/0062 ,  B81B3/0086 ,  B81B2203/0109 ,  B81C2201/0167 ,  G02B26/085 ,  G02B26/101 ,  H02N1/006

    Abstract: A two-dimensional driving actuator comprises a flat spring structure, and a driver for driving the flat spring structure. The flat spring structure includes a moving plate, a moving inner frame surrounding the moving plate, first torsion bars coupling the moving plate and the moving inner frame so as to allow the moving plate to be vibrated relative to the moving inner frame, a fixed outer frame surrounding the moving inner frame, and second torsion bars coupling the moving inner frame and the fixed outer frame so as to allow the moving inner frame to be vibrated relative to the fixed outer frame. The flat spring structure is manufactured from a single semiconductor substrate. The first and second torsion bars are made of different materials.

    Abstract translation: 二维驱动致动器包括平板弹簧结构和用于驱动扁平弹簧结构的驱动器。 平板弹簧结构包括移动板，围绕移动板的移动内框架，联接移动板和移动内框架的第一扭杆，以允许移动板相对于移动内框架振动;固定外壳 围绕移动的内框架的框架，以及联接移动内框架和固定外框架的第二扭杆，以允许移动的内框架相对于固定的外框架振动。 扁平弹簧结构由单个半导体衬底制造。 第一和第二扭杆由不同的材料制成。

    Adjusting operating characteristics of micromachined torsional oscillators
    44.
    发明授权
    Adjusting operating characteristics of micromachined torsional oscillators 失效
    调整微加工扭转振荡器的工作特性

    公开(公告)号：US5969465A

    公开(公告)日：1999-10-19

    申请号：US53232

    申请日：1998-04-01

    Applicant: Armand P. Neukermans ,  Timothy G. Slater ,  Philip Downing

    Inventor： Armand P. Neukermans ,  Timothy G. Slater ,  Philip Downing

    IPC: B81B3/00 ,  G01C19/56 ,  G01P9/04 ,  G02B26/08 ,  G02B26/10 ,  H01L41/09 ,  H02K33/18 ,  H02K33/00

    CPC classification number: B81B3/0078 ,  G02B26/0841 ,  G02B26/085 ,  G02B26/0858 ,  G02B26/0866 ,  G02B26/101 ,  H02K33/18 ,  B81B2203/0109 ,  B81C2201/0167

    Abstract: An improved micromachined structure used for beam scanners, gyroscopes, etc. includes a reference member from which project a first pair of axially aligned torsion bars. A first dynamic member, coupled to and supported from the reference member by the torsion bars, oscillates in one-dimension about the torsion bar's axis. A second dynamic member may be supported from the first dynamic member by a second pair of axially aligned torsion bars for two-dimensional oscillation. The dynamic members respectively exhibit a plurality of vibrational modes each having a frequency and a Q. The improvement includes means for altering a characteristic of the dynamic member's frequency and Q. Coupling between dynamic members permits altering the second dynamic member's frequency and Q by techniques applied to the first dynamic member. Some techniques disclosed also increase oscillation amplitude or reduce driving voltage, and also increase mechanical ruggedness of the structure.

    Abstract translation: 用于光束扫描器，陀螺仪等的改进的微加工结构包括参考构件，从基准构件突出出第一对轴向对准的扭杆。 通过扭力杆耦合并由参考构件支撑的第一动态构件围绕扭杆的轴线一维摆动。 第二动态构件可以由第二对轴向对准的扭杆从第一动态构件支撑，用于二维振荡。 动态构件分别表现出多个具有频率和Q的振动模式。改进包括用于改变动态构件的频率和Q的特性的装置。动态构件之间的耦合允许通过应用的技术改变第二动态构件的频率和Q 到第一个动态成员。 公开的一些技术还增加振荡幅度或降低驱动电压，并且还增加了结构的机械坚固性。

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