公开(公告)号：US20100290500A1

公开(公告)日：2010-11-18

申请号：US12777661

申请日：2010-05-11

Applicant: Joerg-Thomas ZETTLER ,  Tobias SCHENK ,  Steffen UREDAT ,  Jens ZILIAN ,  Bernd HENNINGER ,  Marcello BINETTI ,  Kolja HABERLAND

Inventor： Joerg-Thomas ZETTLER ,  Tobias SCHENK ,  Steffen UREDAT ,  Jens ZILIAN ,  Bernd HENNINGER ,  Marcello BINETTI ,  Kolja HABERLAND

IPC: G01K15/00

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/0896 ,  G01J5/522 ,  G01J5/60

Abstract: The present invention relates to a method for calibrating a pyrometer, a method for determining the temperature of a semiconducting wafer and a system for determining the temperature of a semiconducting wafer.It is an object of the present invention to provide a method for calibrating a pyrometer which overcomes the disadvantages of the prior art.According to the invention, during the heating process, a first optical radiation having a first wavelength is irradiated onto the calibration sample (12), a first reflection signal resulting from reflection of the first radiation on the calibration sample (12) is measured, and a first reflectance of the calibration sample (12) for the first wavelength from the measured first reflection signal is determined, a second optical radiation having a second wavelength is irradiated onto the calibration sample (12), the first wavelength and the second wavelength being different from each other, a second reflection signal resulting from reflection of the second radiation on the calibration sample (12) is measured, and a second reflectance of the calibration sample (12) for the second wavelength from the measured second reflection signal is determined and, by the pyrometer (1), a thermal radiation signal received from the calibration sample (12) is measured, wherein a temperature of the calibration sample (12) is determined from the ratio of the first reflectance and the second reflectance and wherein the pyrometer (1) is calibrated by assigning the determined temperature of the calibration sample (12) with the thermal radiation signal measured by the pyrometer (1).

Abstract translation: 本发明涉及用于校准高温计的方法，用于确定半导体晶片的温度的方法和用于确定半导体晶片的温度的系统。 本发明的目的是提供一种克服现有技术的缺点的用于校准高温计的方法。 根据本发明，在加热过程中，将具有第一波长的第一光辐射照射到校准样品（12）上，测量由校准样品（12）上的第一辐射的反射产生的第一反射信号， 确定来自测量的第一反射信号的第一波长的校准样品（12）的第一反射率，将具有第二波长的第二光辐射照射到校准样品（12）上，第一波长和第二波长不同 测量由校准样品（12）上的第二辐射的反射产生的第二反射信号，并且确定来自测量的第二反射信号的第二波长的校准样品（12）的第二反射率， 通过高温计（1）测量从校准样品（12）接收的热辐射信号，其中校准器 从第一反射率和第二反射率的比值确定离子样品（12），其中通过用校准样品（12）测定的热辐射信号将测定的温度（1）由高温计（1 ）。

公开(公告)号：US07820967B2

公开(公告)日：2010-10-26

申请号：US11898247

申请日：2007-09-11

Applicant: Robert DeMarco ,  Frank Vallese ,  Gerard DiTaranto

Inventor： Robert DeMarco ,  Frank Vallese ,  Gerard DiTaranto

IPC: G01J5/00

CPC classification number: G01J5/02 ,  G01C3/08 ,  G01J5/0215 ,  G01J5/025 ,  G01J5/0265 ,  G01J5/0275 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/089 ,  G01J5/0896 ,  G01J2005/0077 ,  G01S17/46 ,  H04N5/2256 ,  H04N5/23293 ,  H04N5/33 ,  H04N5/332

Abstract: An infrared camera including optics and a detector sensitive to infrared radiation is used in conjunction with at least one light source, such as a laser, to locate a reference point on a target. Two intersecting line segments are produced by the one light source or a combination of two light sources to locate the reference point on the target. The infrared camera would display both an infrared image as well as a visible image which can be merged onto a single display. The teaching of the present invention could also be used to determine the distance to the target as well as the area of the target.

Abstract translation: 包括光学元件和对红外线辐射敏感的检测器的红外摄像机与至少一个光源（例如激光器）结合使用，以将目标点上的参考点定位。 两个相交的线段由一个光源或两个光源的组合产生以将参考点定位在目标上。 红外摄像机将显示红外图像以及可以合并到单个显示器上的可见图像。 本发明的教导还可以用于确定到目标​​的距离以及目标的面积。

公开(公告)号：US07781735B2

公开(公告)日：2010-08-24

申请号：US11973041

申请日：2007-10-04

Applicant: Virgil J. Gamroth ,  Ernest Cameron

Inventor： Virgil J. Gamroth ,  Ernest Cameron

IPC: G01J5/00

CPC classification number: G01J1/02 ,  G01J1/0219 ,  G01J1/0228 ,  G01J1/0271 ,  G01J1/04 ,  G01J1/0466 ,  G01J1/06 ,  G01J1/42 ,  G01J5/02 ,  G01J5/026 ,  G01J5/0265 ,  G01J5/06 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/0859 ,  G01J5/10 ,  G01J2001/0276 ,  G01J2001/4266 ,  G01J2005/0077

Abstract: A sun detection sensor assembly for attachment to a thermal imaging device, comprising an elongated tubular body having two ends and a sensor, characterized as Sun TECT sensor, attached to one end, the Sun TECT sensor having a tubular body, an IR window positioned at one end of the tubular body, and a photo a infrared photo transistor positioned within the tubular body, opposite the IR window, the infrared photo transistor having a photo sensitive surface for detecting the exposure from sun when the sun is within a field of view of the Sun TECT Sensor, and an automatic ON/OFF mechanism which is activated by the infrared photo transistor and protecting the thermal imaging device from undesired and harmful infrared radiation.

Abstract translation: 一种用于附接到热成像装置的太阳检测传感器组件，包括具有两端的细长管状体和附接到一端的Sun TECT传感器的传感器，所述Sun TECT传感器具有管状体，IR窗口位于 管状体的一端和与IR窗口相对的位于管状体内的红外光电晶体管的照片，红外光电晶体管具有光敏表面，用于当太阳处于 太阳TECT传感器，以及由红外光电晶体管激活的自动ON / OFF机构，并保护热成像设备免受不良和有害的红外辐射。

公开(公告)号：US20100202683A1

公开(公告)日：2010-08-12

申请号：US12367480

申请日：2009-02-06

Applicant: Ian S. Robinson

Inventor： Ian S. Robinson

IPC: G06K9/34 ,  G03B13/18

CPC classification number: H04N5/33 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/10 ,  G01J2005/0077 ,  G01N2021/1793 ,  G01N2021/3531

Abstract: Radiation is received from a scene impinging on at least one focal plane. A first spectral band is sampled to obtain a first band mean signal level, and either a first band image frame is collected when the first band mean signal level is at or below a first threshold, or a first image frame is collected in a first sub-band when the first band mean signal level is above the first threshold. A second sub-band is sampled to obtain a second sub-band mean signal level and a second image frame is collected in the second sub-band when the second sub-band mean signal level is at or below a second threshold. An image to be displayed is generated by combining at least two collected frames.

Abstract translation: 从入射至少一个焦平面的场景接收辐射。 对第一频谱带进行采样以获得第一频带平均信号电平，并且当第一频带平均信号电平处于或低于第一阈值时收集第一频带图像帧，或者在第一子集中收集第一图像帧 当第一频带平均信号电平高于第一阈值时。 当第二子带平均信号电平处于或低于第二阈值时，第二子带被采样以获得第二子带均衡信号电平，并且第二图像帧被收集在第二子带中。 通过组合至少两个收集的帧来生成要显示的图像。

公开(公告)号：US20100124249A1

公开(公告)日：2010-05-20

申请号：US12273842

申请日：2008-11-19

Applicant: WOLFGANG ADERHOLD ,  Ravi Jallepally ,  Balasubramanian Ramachandran ,  Aaron M. Hunter ,  Ilias Iliopoulos

Inventor： WOLFGANG ADERHOLD ,  Ravi Jallepally ,  Balasubramanian Ramachandran ,  Aaron M. Hunter ,  Ilias Iliopoulos

IPC: G01J5/00

CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0846 ,  G01J2005/0081

Abstract: Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.

Abstract translation: 提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。 还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。 应用径向和方位角微分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。 应用虚拟计量来控制处理室的性能。

公开(公告)号：US20100121479A1

公开(公告)日：2010-05-13

申请号：US12451070

申请日：2008-12-08

Applicant: Sotaro Ol ,  Masanari Matsuura ,  Tomoyuki Kubota ,  Masaya Tsuruta

Inventor： Sotaro Ol ,  Masanari Matsuura ,  Tomoyuki Kubota ,  Masaya Tsuruta

IPC: G05D23/19

CPC classification number: G01K13/00 ,  G01J5/0003 ,  G01J5/0044 ,  G01J5/08 ,  G01J5/0846 ,  G01K1/143 ,  H05K3/3494 ,  H05K2203/111 ,  H05K2203/163

Abstract: An object is heated to a preheating temperature in an atmosphere of a reducing gas under the atmospheric pressure while adjusting the setting of the emissivity of a non-contact temperature measuring part and regulating the temperature of the object according to the measured value measured by a contact temperature measuring part. The pressure of the atmosphere is reduced. The object is further heated to a heating temperature under a lowered pressure while regulating the temperature of the object according to the measured value measured by the non-contact temperature measuring part whose setting of the emissivity is adjusted during the heating process to the preheating temperature. The pressure of the atmosphere is increased back to the atmospheric pressure while maintaining the heating temperature of the object. The temperature of the object is decreased under the atmospheric pressure. With this, in the process of heating an object under a lowered pressure, the actual temperature of the object is managed over the whole steps, and the object can be most suitably heated according to the actual temperature.

Abstract translation: 将物体在大气压下在还原气体的气氛中加热到预热温度，同时调节非接触式温度测量部件的发射率的设定，并根据由接触测量的测量值来调节物体的温度 温度测量部件。 大气压力降低。 将该物体进一步在降低的压力下加热到加热温度，同时根据由加热过程中的发射率设定调节到预热温度的非接触式温度测量部件测量的测量值来调节物体的温度。 在保持物体的加热温度的同时，将气氛的压力提高回大气压。 物体的温度在大气压下降低。 由此，在降低压力下对物体进行加热的过程中，物体的实际温度在整个步骤中被管理，并且可以根据实际温度最适当地加热物体。

公开(公告)号：US20100051795A1

公开(公告)日：2010-03-04

申请号：US12461536

申请日：2009-08-14

Applicant: Keiji Tsubota ,  Yutaka Yoshida ,  Eiichi Kito ,  Yasunori Ohta ,  Naoyuki Nishino ,  Shinji Imai ,  Yasuhiro Seto

Inventor： Keiji Tsubota ,  Yutaka Yoshida ,  Eiichi Kito ,  Yasunori Ohta ,  Naoyuki Nishino ,  Shinji Imai ,  Yasuhiro Seto

IPC: G01D18/00

CPC classification number: A61B6/00 ,  A61B6/4291 ,  A61B6/4423 ,  A61B6/5258 ,  A61B6/585 ,  G01J1/0252 ,  G01J1/029 ,  G01J1/42 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/20

Abstract: A radiation detecting apparatus includes a radiation conversion panel for detecting the radiation which has passed through the subject and converting the detected radiation into radiation image information, a temperature sensor for detecting a temperature of the radiation conversion panel, and a sensitivity corrector for correcting at least one of a sensitivity, a dark current, a density step, and a residual image of the radiation conversion panel based on the temperature detected by the temperature sensor.

Abstract translation: 辐射检测装置包括：辐射转换面板，用于检测已经穿过被摄体的辐射并将检测到的辐射转换成放射线图像信息;温度传感器，用于检测辐射转换面板的温度;以及灵敏度校正器，用于至少校正 基于由温度传感器检测到的温度的敏感度，暗电流，密度阶跃和辐射转换面板的残留图像之一。

公开(公告)号：US07543981B2

公开(公告)日：2009-06-09

申请号：US11478312

申请日：2006-06-29

Applicant: Paul Janis Timans

Inventor： Paul Janis Timans

IPC: G01G5/00 ,  G01K17/08 ,  G01K11/00

CPC classification number: G01K15/00 ,  G01J5/0007 ,  G01J5/0806 ,  G01J5/0831 ,  G01J5/0846 ,  G01K11/125

Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.

Abstract translation: 用于晶片温度测量和温度测量装置的校准的方法和装置可以基于确定半导体晶片中的层的吸收。 可以通过将光引向晶片并且从入射光入射的表面下方测量从晶片反射的光来确定吸收。 校准晶片和测量系统可以被布置和配置，以便测量以预定角度反射到晶片表面的光并且其它光不是。 测量也可以基于评估晶片中或晶片上的图案的图像中的对比度。 其他测量可以利用基于反射或透射光的温度确定旁边的晶片内的光程长度的确定。

公开(公告)号：US07528348B2

公开(公告)日：2009-05-05

申请号：US11021915

申请日：2004-12-22

Applicant: Markus Hauf

Inventor： Markus Hauf

IPC: G01J5/06 ,  G01J5/08 ,  F27B5/18

CPC classification number: G01J5/06 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0831 ,  G01J5/0846 ,  G01J2005/0048

Abstract: An apparatus for measuring an object temperature of an object, and including at least one heating apparatus having at least one heating element for heating an object via electromagnetic radiation. Also included is at least one first radiation detector that detects radiation coming from the object within a first field of vision, and, for determining correction parameters, a measuring device that detects the electromagnetic radiation that reaches the first field of vision from the at least one heating element up to a proportionality factor or a known intensity-dependent function.

Abstract translation: 一种用于测量物体的物体温度的装置，并且包括至少一个具有至少一个用于通过电磁辐射加热物体的加热元件的加热装置。 还包括至少一个第一辐射检测器，其在第一视野内检测来自物体的辐射，并且为了确定校正参数，测量装置从至少一个检测器检测到达到第一视场的电磁辐射 加热元件达到比例因子或已知的强度依赖功能。

公开(公告)号：US07491935B2

公开(公告)日：2009-02-17

申请号：US11481262

申请日：2006-07-05

Applicant: Richard A. Burne ,  Dan T. Horak ,  Timothy J. Case

Inventor： Richard A. Burne ,  Dan T. Horak ,  Timothy J. Case

IPC: G01J5/00

CPC classification number: G01J5/08 ,  G01J5/026 ,  G01J5/0806 ,  G01J5/084 ,  G01J5/0846 ,  G01J5/089 ,  G01J5/0893 ,  G01J5/10 ,  G01J2005/0077 ,  H04N5/33 ,  H04N5/332

Abstract: A thermally-directed optical imager and a method of thermally-directing optical processing are described. The thermally-directed imager includes a thermal image sensor, an optical image sensor, and a processor. The thermal and optical sensors respectively generate thermal image and optical image signals. The processor uses the thermal image signal to determine an optical processing region, which the processor uses to derive a compressed-image signal. The optical processing region may be determined by detecting a center of heat-mass associated with the thermal image signal or by performing an edge detection algorithm. In addition, the thermally-directed imager may be focused, zoomed, or centered via the thermal image signal.

Abstract translation: 描述了热定向光学成像器和热引导光学处理的方法。 热定向成像器包括热图像传感器，光学图像传感器和处理器。 热和光传感器分别产生热图像和光学图像信号。 处理器使用热图像信号来确定处理器用于导出压缩图像信号的光学处理区域。 可以通过检测与热图像信号相关联的热质量的中心或通过执行边缘检测算法来确定光学处理区域。 此外，热定向成像器可以经由热图像信号进行聚焦，缩放或居中。