公开(公告)号：US20050263723A1

公开(公告)日：2005-12-01

申请号：US11196191

申请日：2005-08-02

Applicant: Michael Goldstein ,  Peter Silverman

Inventor： Michael Goldstein ,  Peter Silverman

IPC: G03F7/20 ,  G21G5/00

CPC classification number: G03F7/7005 ,  G03F7/201

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

公开(公告)号：US06967710B2

公开(公告)日：2005-11-22

申请号：US10759598

申请日：2004-01-20

Applicant: Naomasa Shiraishi

Inventor： Naomasa Shiraishi

IPC: G03B27/42 ,  G03B27/54 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F7/701 ,  G03F7/201 ,  G03F7/70066 ,  G03F7/70075 ,  G03F7/70108 ,  G03F7/70141 ,  G03F7/70158 ,  G03F7/70208 ,  G03F7/70316 ,  G03F7/70333 ,  G03F7/70358 ,  G03F7/70858 ,  G03F7/70883 ,  G03F7/70891 ,  G03F9/7088

Abstract: An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.

公开(公告)号：US20050025403A1

公开(公告)日：2005-02-03

申请号：US10924933

申请日：2004-08-25

Applicant: Masanori Ueda ,  Haruyuki Matsunaga

Inventor： Masanori Ueda ,  Haruyuki Matsunaga

IPC: C23F1/02 ,  F16C17/10 ,  F16C33/10 ,  F16C33/14 ,  G03F7/00 ,  G03F7/20 ,  G03F7/24 ,  F16C32/06

CPC classification number: G03F7/201 ,  C23F1/02 ,  F16C17/026 ,  F16C17/102 ,  F16C17/107 ,  F16C33/107 ,  F16C33/14 ,  F16C2223/70 ,  G03F7/00 ,  G03F7/2032 ,  G03F7/24 ,  Y10T29/49639

Abstract: A dynamic pressure bearing manufacturing method, comprising the steps of forming a herringbone groove pattern on the outer peripheral surface of a cylindrical mask and a spiral groove pattern on the lower surface of the flange part thereof, inserting the mask in a dynamic pressure bearing and optical fibers into the mask, radiating light from an external light source to the mask through optical fibers to transfer the herringbone groove pattern onto the inner peripheral surface of the dynamic pressure bearing and, at the same time, radiating the light from the upper side of the flange part to transfer the spiral groove pattern onto the upper surface of the dynamic pressure bearing performing development, and forming a herringbone groove on the inner peripheral surface of the bearing by etching and a spiral groove on the upper surface thereof.

Abstract translation: 一种动态压力轴承制造方法，包括以下步骤：在圆柱形掩模的外周面上形成人字形凹槽图案，并在其凸缘部分的下表面上形成螺旋形凹槽图案，将所述掩模插入动压轴承和光学 将光纤插入到掩模中，通过光纤将外部光源的光照射到掩模，将人字形槽图案转印到动压轴承的内周面上，并且同时从 凸缘部分将螺旋槽图案转移到动压轴承执行显影的上表面上，并且通过蚀刻在轴承的内周面上形成人字形槽，并在其上表面上形成螺旋槽。

公开(公告)号：US20040110092A1

公开(公告)日：2004-06-10

申请号：US10309427

申请日：2002-12-04

Applicant: Taiwan Semiconductor Manufacturing Company

Inventor： Chin-Hsiang Lin

IPC: G03F007/20

CPC classification number: G03F7/203 ,  G03F7/001 ,  G03F7/201

Abstract: A method for forming an arbitrary pattern of sub-micron contact holes in a substrate using a combination of interferometric photolithography and optical photolithography with a non-critical mask. The substrate is covered with a photosensitive material and is exposed by a standing wave interference pattern produced by the superposition of two coherent laser beams. Then the substrate is rotated through 90null and exposed by the same pattern. The double exposure produces a regular array of sub-micron unexposed regions which are all potentially holes if developed. The photosensitive material is then covered by a non-critical photomask and a standard light source is used to exposed those areas of the photosensitive material containing unwanted holes. Upon final development, the desired pattern is obtained.

Abstract translation: 使用干涉光刻和具有非临界掩模的光学光刻的组合在衬底中形成亚微米接触孔的任意图案的方法。 衬底被感光材料覆盖，并且通过由两个相干激光束的叠加产生的驻波干涉图案曝光。 然后将基板旋转90°并以相同的图案曝光。 双重曝光产生了亚微米未曝光区域的规则阵列，如果显影，这些区域都是潜在的孔。 感光材料然后被非关键光掩模覆盖，并且使用标准光源来曝光含有不想要的孔的感光材料的那些区域。 在最终显影时，获得所需的图案。

公开(公告)号：US06694503B2

公开(公告)日：2004-02-17

申请号：US09773909

申请日：2001-02-02

Applicant: Jun Minakuti ,  Osamu Tabata ,  Koji Yamamoto

Inventor： Jun Minakuti ,  Osamu Tabata ,  Koji Yamamoto

IPC: G06F1750

CPC classification number: G03F7/70558 ,  G03F7/201 ,  G03F7/2039 ,  G03F7/70358 ,  G03F7/70366 ,  G03F7/70416 ,  G03F7/70425

Abstract: For allowing processing of a material into an intended three-dimensional configuration having different processed depths while suppressing an influence exerted on a processed configuration by a configuration of a transparent portion, a processing device includes an SR light source 1 for emitting SR light, an X-ray mask having a transparent portion of a predetermined configuration for passing the X-rays emitted from the SR light source 1, and exposure stage 3 for oscillating the X-ray mask and the material relatively to each other in accordance with a movement pattern determined based on the processing configuration of the processing material for moving the X-ray mask and the material relatively to each other and thereby oscillating the region where the material is irradiated with the X-ray passed through the transparent opening.

Abstract translation: 为了允许通过透明部分的配置来抑制材料处理成具有不同处理深度的预期三维构造，同时抑制通过透明部分的配置对加工构造的影响，处理装置包括用于发射SR光的SR光源1，X射线 具有用于使从SR光源1发射的X射线通过的预定构造的透明部分的曝光掩模和用于相对于彼此相对地振动X射线掩模和材料的曝光级3 基于用于相对于彼此移动X射线掩模和材料的处理材料的处理配置，从而使穿过透明开口的X射线照射材料的区域振荡。

公开(公告)号：US20030205749A1

公开(公告)日：2003-11-06

申请号：US10453229

申请日：2003-06-03

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates ,  Garry A. Mercaldi

IPC: H01L027/108

CPC classification number: H01L28/92 ,  G03F7/0035 ,  G03F7/201 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/32139 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

Abstract: Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

公开(公告)号：US20020102475A1

公开(公告)日：2002-08-01

申请号：US10022067

申请日：2001-12-18

Applicant: The University of Vermont and State Agricultural College

Inventor： Brian Esser ,  Dryver R. Huston ,  Noel V. Pelczarski ,  Wolfgang Sauter

IPC: G03F007/20 ,  G03F007/24

CPC classification number: B82Y10/00 ,  G02B27/56 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/70383

Abstract: A method of curing a photosensitive material (10) having a critical electrical field amplitude at which photoinitiation occurs. The method includes contacting the photosensitive material, e.g., a photoinitiator/monomer resin system, with a substrate (18), such as an optical element, so as to form an interface (20) between the photosensitive material and the substrate. A light beam (12) is directed into the substrate such that the light beam is totally internally reflected from the interface within the substrate so that an evanescent wave is created in the photosensitive material. In order for curing to occur, the electric field amplitude of the evanescent wave at the interface must be at least equal to the critical electric field amplitude of the photosensitive material.

Abstract translation: 一种固化具有发生光引发的临界电场振幅的感光材料（10）的方法。 该方法包括使感光材料（例如光引发剂/单体树脂体系）与诸如光学元件的基材（18）接触，以在感光材料和基材之间形成界面（20）。 将光束（12）引导到基板中，使得光束从基板内的界面全内反射，使得在感光材料中产生ev逝波。 为了固化发生，界面处的消逝波的电场振幅必须至少等于感光材料的临界电场振幅。

公开(公告)号：US20010008741A1

公开(公告)日：2001-07-19

申请号：US09795442

申请日：2001-03-01

Applicant: FUJITSU LIMITED

Inventor： Junji Tomita ,  Fumio Yamagishi

IPC: G03F007/004 ,  G03F007/26 ,  G02B005/18

CPC classification number: G03F7/201 ,  G02B5/1857 ,  G03F7/0005

Abstract: A method of fabricating a diffraction grating by utilizing a single substrate comprises the steps of forming a photosensitive material layer and a light transmission reducing film having a predetermined pattern integrally with each other on the substrate, exposing the photosensitive material layer by exposure irradiation light via the light transmission reducing film, and developing the photosensitive material layer after exposure. It is composed so that the direction of exposure and the direction of development are opposite to each other. It is possible to fabricate a diffraction grating in which each grating is formed on a predetermined substrate at a predetermined pitch and a root portion in a cross-section of each diffraction grating is constricted. In this way, it is possible to reduce or eliminate interfaces, so that the generation of noise light can be effectively suppressed and a diffraction grating having a high diffraction efficiency can be made.

Abstract translation: 通过利用单个基板制造衍射光栅的方法包括以下步骤：在基板上形成具有预定图案的感光材料层和相互一体的透光率降低膜，通过曝光照射光将光敏材料层经由 透光降低膜，曝光后显影感光材料层。 它的组成是使曝光方向和发展方向彼此相反。 可以制造衍射光栅，其中每个光栅以预定间距形成在预定基板上，并且每个衍射光栅的横截面中的根部被收缩。 以这种方式，可以减少或消除界面，从而可以有效地抑制噪声光的产生，并且可以制造具有高衍射效率的衍射光栅。

公开(公告)号：US06233041B1

公开(公告)日：2001-05-15

申请号：US09106721

申请日：1998-06-29

Applicant: Naomasa Shiraishi

Inventor： Naomasa Shiraishi

IPC: G03B2742

CPC classification number: G03F9/7088 ,  G03F7/201 ,  G03F7/701 ,  G03F7/70241 ,  G03F7/7025 ,  G03F7/70308

Abstract: A method for transferring a fine pattern (12) on a mask (11) onto a substrate (17) by a projection exposure apparatus including an illumination optical system (1-10) for irradiating an illuminating light on the mask (11), and a projection optical system (13) for projecting an image of the fine pattern (12) on the illuminated mask onto the substrate (17). The illuminating light is irradiated at least in the form of a pair of light beams opposedly inclined with respect to the mask through a pair of transparent windows (6a, 6b) of a spatial filter (6) whereby either one of the ±first-order diffracted beams and the 0-order diffracted beam produced from the fine pattern (12) of the mask (11) illuminated by each light beam are respectively passed apart by the equal distance from the optical axis of the projection optical system at or near to the Fourier transform plane within the projection optical system with respect to the fine pattern (12) of the mask (11), thereby forming on the substrate (17) a high-resolution projected image of a strong light-and-dark contrast with a high degree of focus depth.

Abstract translation: 一种通过包括照射光学系统（1-10）的投影曝光装置将掩模（11）上的精细图案（12）转印到基板（17）上的方法，用于将掩模（11）上的照明光照射，以及 投影光学系统（13），用于将照射的掩模上的精细图案（12）的图像投影到基板（17）上。 照明光至少以通过空间滤光片（6）的一对透明窗（6a，6b）相对于掩模相对倾斜的一对光束的形式照射，由此±一阶 衍射光束和由每个光束照射的掩模（11）的精细图案（12）产生的0级衍射光束分别从投影光学系统的光轴在等于或接近于 相对于掩模（11）的精细图案（12）在投影光学系统内的傅立叶变换平面，从而在基板（17）上形成具有高的亮 - 暗对比度的高分辨率投影图像 焦点深度。

公开(公告)号：US6025115A

公开(公告)日：2000-02-15

申请号：US429288

申请日：1995-04-25

Applicant: Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

Inventor： Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

IPC: C23C16/04 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042

Abstract: A processing method for etching a substrate is described. This method includes subjecting a surface of a substrate to be processed to selective irradiation with a light in a gas atmosphere to form a surface-modified layer. The substrate surface with the surface-modified layer is then annealed to stabilize and make the surface-modified layer more etch resistant. Both the stabilized surface-modified layer and a non-modified portion of the substrate are then subjected to dry etching, thereby utilizing the higher resistance to dry etching of the stabilized surface-modified layer compared to the non-modified portion to selectively etch the non-modified portion to a desired depth.

Abstract translation: 对基板的蚀刻处理方法进行说明。 该方法包括使待处理的基板的表面经受气体气氛中的光的选择性照射，以形成表面改性层。 然后将具有表面改性层的衬底表面退火以稳定并使表面改性层更耐蚀刻。 然后将稳定化的表面改性层和基底的未改性部分进行干蚀刻，从而与未改性部分相比，利用较稳定的表面改性层的干蚀刻的较高电阻以选择性地蚀刻非 - 改变的部分到期望的深度。