公开(公告)号：US20040253832A1

公开(公告)日：2004-12-16

申请号：US10889597

申请日：2004-07-12

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates

IPC: H01L021/338 ,  H01L021/302 ,  H01L021/461

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

公开(公告)号：US20020165105A1

公开(公告)日：2002-11-07

申请号：US10186777

申请日：2002-07-01

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates ,  Max F. Hineman

IPC: C11D001/00

CPC classification number: C11D7/08 ,  C11D7/265 ,  C11D11/0047

Abstract: A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in about 40 wt. % to about 85 wt. % of the composition, the phosphoric acid can be present in about 0.01 wt. % to about 10 wt. % of the composition, and the organic acid can be present in about 10 wt. % to about 60 wt. % of the composition. The composition can be used for cleaning various surfaces, such as, for example, patterned metal layers and vias by exposing the surfaces to the composition.

Abstract translation: 一种用于半导体加工的组合物，其中组合物包含水，磷酸和有机酸; 其中有机酸是抗坏血酸，或者是具有两个以上羧酸基团的有机酸（例如柠檬酸）。 水可以约40wt。 ％至约85重量％ 组合物的％，磷酸可以以约0.01重量％存在。 ％至约10wt。 ％的组成，并且有机酸可以以约10重量％ ％至约60wt。 ％的组成。 组合物可以用于通过将表面暴露于组合物来清洁各种表面，例如图案化的金属层和通孔。

公开(公告)号：US20020187906A1

公开(公告)日：2002-12-12

申请号：US10186928

申请日：2002-07-01

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates ,  Max F. Hineman

IPC: C11D001/00

CPC classification number: C11D7/08 ,  C11D7/265 ,  C11D11/0047

Abstract: A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in about 40 wt. % to about 85 wt. % of the composition, the phosphoric acid can be present in about 0.01 wt. % to about 10 wt. % of the composition, and the organic acid can be present in about 10 wt. % to about 60 wt. % of the composition. The composition can be used for cleaning various surfaces, such as, for example, patterned metal layers and vias by exposing the surfaces to the composition.

公开(公告)号：US20020139387A1

公开(公告)日：2002-10-03

申请号：US10100319

申请日：2002-03-07

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates

IPC: B08B003/12 ,  B08B006/00 ,  B08B007/02 ,  B08B007/00

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k介电材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸，成分和控制pH的量，可以配制组合物以实现期望的低k电介质去除速率，其范围从慢和约在约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。

公开(公告)号：US20040242016A1

公开(公告)日：2004-12-02

申请号：US10889201

申请日：2004-07-12

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates

IPC: C25F001/00 ,  H01L021/461

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

公开(公告)号：US20040043610A1

公开(公告)日：2004-03-04

申请号：US10231416

申请日：2002-08-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Donald L. Yates

IPC: H01L021/44

CPC classification number: H01L21/02071 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/32136 ,  H01L43/12

Abstract: A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound and a pyridine compound. The semi-aqueous composition includes glacial acetic acid and one or more components including a fluoride compound and a pyridine compound. The composition can be used in removing processing byproducts from substrate assembly, including MRAM devices, that include at least a metal containing region and processing byproducts, where removing the processing byproducts includes exposing the substrate assembly to the composition for a time effective to remove at least a portion of the processing byproducts.

Abstract translation: 提供了组合物和使用该组合物去除加工副产物的方法。 组合物可以是非水或半水性的。 非水性组合物包括非水溶剂和一种或多种包含氟化物和吡啶化合物的组分。 半水性组合物包括冰醋酸和一种或多种组分，包括氟化物和吡啶化合物。 该组合物可用于从包括至少含金属区域和加工副产物的基片组装（包括MRAM器件）中除去加工副产物，其中除去加工副产物包括将基片组件暴露于组合物上一段时间以有效地除去至少 一部分加工副产品。

公开(公告)号：US20030205749A1

公开(公告)日：2003-11-06

申请号：US10453229

申请日：2003-06-03

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates ,  Garry A. Mercaldi

IPC: H01L027/108

CPC classification number: H01L28/92 ,  G03F7/0035 ,  G03F7/201 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/32139 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

Abstract: Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

公开(公告)号：US20030203508A1

公开(公告)日：2003-10-30

申请号：US10408358

申请日：2003-04-07

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates ,  Garry A. Mercaldi ,  James J. Hofmann

IPC: H01L021/00

CPC classification number: H01L27/1085 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/82 ,  H01L28/84 ,  H01L28/91

Abstract: Methods for forming the lower electrode of a capacitor in a semiconductor circuit, and the capacitors formed by such methods are provided. The lower electrode is fabricated by forming a texturizing underlayer and then depositing a conductive material thereover. In one embodiment of a method of forming the lower electrode, the texturizing layer is formed by depositing a polymeric material comprising a hydrocarbon block and a silicon-containing block, over the insulative layer of a container, and then subsequently converting the polymeric film to relief or porous nanostructures by exposure to UV radiation and ozone, resulting in a textured porous or relief silicon oxycarbide film. A conductive material is then deposited over the texturizing layer resulting in a lower electrode have an upper roughened surface. In another embodiment of a method of forming the lower electrode, the texturizing underlayer is formed by depositing overlying first and second conductive metal layers and annealing the metal layers to form surface dislocations, preferably structured as a periodic network. A conductive metal is then deposited in gaseous phase, and agglomerates onto the surface dislocations of the texturizing layer, forming nanostructures in the form of island clusters. The capacitor is completed by depositing a dielectric layer over the formed lower electrode, and forming an upper capacitor electrode over the dielectric layer. The capacitors are particularly useful in fabricating DRAM cells.

公开(公告)号：US20040250835A1

公开(公告)日：2004-12-16

申请号：US10889084

申请日：2004-07-12

Applicant: Micron Technology, Inc.

Inventor： Donald L. Yates

IPC: H01L021/302 ,  H01L021/461 ,  C23G001/02 ,  H01L021/311

CPC classification number: C09K13/08 ,  B08B3/08 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  C11D7/08 ,  C11D7/10 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/02 ,  G03F7/423 ,  H01L21/31111 ,  H01L21/31133 ,  Y10S438/948

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact.

Abstract translation: 提供了用于清洁半导体晶片的表面的改进的组合物和方法。 该组合物可用于选择性地除去低k电介质材料，例如二氧化硅，覆盖低k电介质层的光致抗蚀剂层，或从晶片表面两层。 根据本发明配制组合物以从晶片的表面提供低k电介质和/或光致抗蚀剂的期望的去除速率。 通过改变氟离子成分以及氟离子成分和酸，成分和控制pH的量，可以配制组合物以实现期望的低k电介质去除速率，其范围从慢和约在约 每分钟50至约1000埃，以每分钟大约1000埃的速度相对快速地除去低k电介质材料。 组合物也可以配制成选择性地除去光致抗蚀剂层，使底层的低k电介质层基本上完整无缺。

公开(公告)号：US20040157448A1

公开(公告)日：2004-08-12

申请号：US10770797

申请日：2004-02-03

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Donald L. Yates ,  Donald L. Westmoreland

IPC: H01L021/302 ,  H01L021/461

CPC classification number: C09K13/08 ,  H01L21/02063

Abstract: A composition suitable for cleaning and methods of cleaning etch residue are provided. The composition includes at least one source of a fluoride ion and at least one organic solvent.

Abstract translation: 提供了适用于清洗的组合物和清洗蚀刻残渣的方法。 该组合物包括至少一种氟离子源和至少一种有机溶剂。