公开(公告)号：US20050133735A1

公开(公告)日：2005-06-23

申请号：US10952477

申请日：2004-09-29

Applicant: Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01J1/304 ,  H01J1/308 ,  H01J63/02 ,  G21G5/00

CPC classification number: H01J63/02 ,  H01J1/3044 ,  H01J1/308

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract translation: 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US06847045B2

公开(公告)日：2005-01-25

申请号：US09975297

申请日：2001-10-12

Applicant: Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

Inventor： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

IPC: H01J1/308 ,  H01J1/312 ,  H01L29/06 ,  H01L29/12

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312

Abstract: A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer, effective negative electron affinity is realized for the quasi-equilibrium “cold” electrons accumulated in the depletion layer in the p-region next to the dielectric layer. These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the n+-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.

Abstract translation: 冷电子发射器可以包括大量p掺杂的半导体和介电层，以及金属层（p-D-M结构）。 该结构的修改包括p区下面的n +掺杂区域（n + -p-D-M结构）。 这些结构使得可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为在电介质层两端的某些电压降下，实现了与介质层相邻的p区中累积在耗尽层中的准平衡“冷”电子的有效负电子亲和力。 这些电子是由于p-D-M结构中的雪崩或n + -p-D-M结构中的注入过程而产生的。 这些发射体是稳定的，因为它们在真空区域中使用相对低的提取场，并且不受加速离子的污染和吸收的影响。 此外，结构可以用当前最先进的技术制造。

公开(公告)号：US06806630B2

公开(公告)日：2004-10-19

申请号：US10042927

申请日：2002-01-09

Applicant: Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

Inventor： Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

IPC: H01J114

CPC classification number: B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

公开(公告)号：US06771010B2

公开(公告)日：2004-08-03

申请号：US09845845

申请日：2001-04-30

Applicant: Xia Sheng ,  Nobuyoshi Koshida ,  Huei-Pei Kuo

Inventor： Xia Sheng ,  Nobuyoshi Koshida ,  Huei-Pei Kuo

IPC: H01J102

CPC classification number: H01J1/308 ,  H01J9/022 ,  Y10S438/96

Abstract: A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.

Abstract translation: 高发射电子发射体包括电子注入层，与电子注入层接触的高孔隙率多孔硅材料的有源层，与活性层接触的低孔隙率多孔硅材料的接触层， 重掺杂区域和与接触层接触的可选顶部电极。 接触层降低有源层和顶部电极之间的接触电阻，并且重掺杂区域降低接触层的电阻率，从而增加电子发射效率和从顶部电极稳定的电子发射。 电子注入层由诸如n +半导体，n +单晶硅，金属，硅化物或氮化物的导电材料制成。 有源层和接触层形成在沉积在电子注入层上的硅材料层中，然后在氢氟酸溶液中电化学阳极氧化。 在阳极氧化之前，可以将界面表面掺杂以形成重掺杂区域。 硅材料层可以是多孔外延硅，多孔多晶硅，多孔非晶硅和多孔碳化硅。

公开(公告)号：US20040147050A1

公开(公告)日：2004-07-29

申请号：US10758801

申请日：2004-01-15

Inventor： Thomas Novet ,  David M. Schut

IPC: H01J009/00 ,  H01J009/24 ,  H01J009/14

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  Y10S977/939

Abstract: An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.

公开(公告)号：US20040061125A1

公开(公告)日：2004-04-01

申请号：US10443970

申请日：2003-05-23

Applicant: NAGOYA UNIVERSITY

Inventor： Nobuhiko Sawaki ,  Yoshio Honda

IPC: H01L033/00

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first semiconductor nitride in the opening to complete a semiconductor element structure.

Abstract translation: 在开口部露出的硅基板的主面上形成具有开口部的掩模层。 然后，在开口中由第一半导体氮化物形成六角锥形岛状部分，以完成半导体元件结构。

公开(公告)号：US20040031955A1

公开(公告)日：2004-02-19

申请号：US10439642

申请日：2003-05-15

Inventor： Xia Sheng ,  Nobuyoshi Koshida ,  Huei-Pei Kuo

IPC: H01L029/06

CPC classification number: H01J1/308 ,  H01J9/022 ,  Y10S438/96

Abstract: A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as nnull semiconductor, nnull single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.

Abstract translation: 公开了高发射电子发射器和制造高发射电子发射体的方法。 高发射电子发射体包括电子注入层，与电子注入层接触的高孔隙率多孔硅材料的有源层，与活性层接触的低孔隙率多孔硅材料的接触层， 重掺杂区域和与接触层接触的可选顶部电极。 接触层降低有源层和顶部电极之间的接触电阻，并且重掺杂区域降低接触层的电阻率，从而增加电子发射效率和从顶部电极稳定的电子发射。 电子注入层由诸如n +半导体，n +单晶硅，金属，硅化物或氮化物的导电材料制成。 有源层和接触层形成在沉积在电子注入层上的硅材料层中，然后在氢氟酸溶液中电化学阳极氧化。 在阳极氧化之前，可以将界面表面掺杂以形成重掺杂区域。 硅材料层可以是多孔外延硅，多孔多晶硅，多孔非晶硅和多孔碳化硅。

公开(公告)号：US20030010996A1

公开(公告)日：2003-01-16

申请号：US10191477

申请日：2002-07-10

Applicant: NEC CORPORATION

Inventor： Hiroo Hongo

IPC: H01L029/74 ,  H01L031/111

CPC classification number: H01J1/308

Abstract: A cold cathode device is formed from a p-type semiconductor substrate 1. Two source/drain regions 2 are formed in the p-type semiconductor substrate 1, a silicon oxide film 3, which is an insulating film, is formed on the surface of the p-type semiconductor substrate 1 (the face where the source/drain regions 2 are formed), and a gate electrode 4 is formed on top of the silicon oxide film 3. Furthermore, a substrate electrode 5 is formed on the back surface of the p-type semiconductor substrate 1. The same voltages are applied to the source/drain regions 2 and the gate electrode 4, and a lower voltage is applied to the substrate electrode 5.

Abstract translation: 冷阴极器件由p型半导体衬底1形成。在p型半导体衬底1中形成两个源极/漏极区域2，在绝缘膜的表面上形成作为绝缘膜的氧化硅膜3 p型半导体衬底1（形成源极/漏极区域2的面）和栅电极4形成在氧化硅膜3的顶部。此外，衬底电极5形成在氧化硅膜3的背面 p型半导体衬底1.对源极/漏极区域2和栅极电极4施加相同的电压，并且向衬底电极5施加较低的电压。

公开(公告)号：US06441542B1

公开(公告)日：2002-08-27

申请号：US09358863

申请日：1999-07-21

Applicant: Glen Hush ,  Dean Wilkinson ,  Zhong-Yi Xia

Inventor： Glen Hush ,  Dean Wilkinson ,  Zhong-Yi Xia

IPC: H01L2906

CPC classification number: H01J1/308 ,  H01J1/3042 ,  H01J1/34

Abstract: In one aspect, a cathode emitter device comprises an infrared receptor having an n-type doped semiconductive region overlying a p-type doped semiconductive region. The n-type and p-type doped regions of the receptor join at a junction diode. The cathode emitter device further comprises an array of cathode emitter tips in electrical connection with the n-type region of the infrared receptor. In other aspects, the invention encompasses field emission display devices, such as, for example, devices comprising the above-described cathode emitter device. In yet other aspects, the invention encompasses methods of utilizing cathode emitter devices, such as, for example, methods of utilizing the above-described cathode emitter device.

Abstract translation: 一方面，阴极发射器件包括红外接收器，其具有覆盖p型掺杂半导体区域的n型掺杂半导体区域。 受体的n型和p型掺杂区域在结二极管处连接。 阴极发射器件还包括与红外线接收器的n型区域电连接的阴极发射器尖端的阵列。 在其它方面，本发明包括场发射显示装置，例如包括上述阴极发射装置的装置。 在其它方面，本发明包括利用阴极发射器件的方法，例如利用上述阴极发射器件的方法。

公开(公告)号：US06340859B1

公开(公告)日：2002-01-22

申请号：US09248122

申请日：1999-02-11

Applicant: Jung-Yong Lee ,  Byoung Lyong Choi

Inventor： Jung-Yong Lee ,  Byoung Lyong Choi

IPC: H01J102

CPC classification number: H01J1/308

Abstract: A cold cathode electron emission device activating electron emission applying an external electric field is provided, in which an inversion layer inverting the type of a semiconductor layer by an external electric field is generated to form a shallow channel, and an electron beam due to a number of electrons is emitted by an avalanche breakdown in the shallow channel. A single or plurality of active regions are formed in the upper portion of the semiconductor substrate in fabrication and then an inversion layer is formed by the external electric field. The cold cathode electron emission device is driven according to the principle that a number of electrons are emitted by the avalanche breakdown in the inversion layer. Thus, since the high-density electrons are instantaneously emitted at the inversion layer by the external electric field, a preheating is not required. As a result, the cold cathode electron emission device can be applied to a variety of fields such as a cathode ray tube (CRT), a field emission display (FED), a microwave device, an e-beam lithography, a laser and a sensor. Also, when a logic circuit, a signal processing circuit and a memory device are integrated together with the cold cathode electron emission device on a semiconductor substrate, various high efficiency devices and circuits can be fabricated which are light, thin, short and small.

Abstract translation: 提供了施加外部电场的激活电子发射的冷阴极电子发射装置，其中产生通过外部电场反转半导体层的类型的反转层以形成浅沟道，并且由于数量而产生电子束 的电子由浅沟道中的雪崩击穿发射。 在制造中在半导体衬底的上部形成单个或多个有源区，然后通过外部电场形成反型层。 冷阴极电子发射器件根据反转层中的雪崩击穿发射多个电子的原理被驱动。 因此，由于高密度电子通过外部电场在反转层瞬时发射，因此不需要预热。 结果，冷阴极电子发射器件可以应用于诸如阴极射线管（CRT），场发射显示器（FED），微波器件，电子束光刻，激光和 传感器。 此外，当逻辑电路，信号处理电路和存储器件与半导体衬底上的冷阴极电子发射器件集成在一起时，可以制造出轻，薄，短和小的各种高效率器件和电路。