公开(公告)号：US07304420B2

公开(公告)日：2007-12-04

申请号：US11016346

申请日：2004-12-17

Applicant: Mervyn John Rose ,  Ravi Silva ,  John Shannon ,  Janos Peter Hajto

Inventor： Mervyn John Rose ,  Ravi Silva ,  John Shannon ,  Janos Peter Hajto

IPC: H01J1/02

CPC classification number: H01J1/3044 ,  G02F2001/133625 ,  H01J2201/30407 ,  H01J2201/30446 ,  H01L51/5225

Abstract: A field emission device having improved properties and which finds use in display devices, such as a flat panel displays. Known devices and displays suffer from problems such as complexity of fabrication and limited color gamut. The present device provides a field emission backplate which is made from a substantially semiconductor based material and has a plurality of grown tips. The device also includes at least one electro-luminescent or photo-luminescent material having a fluorescent material such as a fluorescent dye doped material chemically attached thereto.

Abstract translation: 具有改进性能并可用于诸如平板显示器的显示装置中的场致发射装置。 已知的装置和显示器存在制造复杂性和色域有限等问题。 本发明的装置提供了一种场致发射背板，其由基本上为半导体的材料制成并且具有多个生长的尖端。 该装置还包括至少一种具有荧光材料的电致发光或光致发光材料，例如与其化学连接的荧光染料掺杂材料。

公开(公告)号：US07239073B2

公开(公告)日：2007-07-03

申请号：US10780714

申请日：2004-02-19

Applicant: Hirofumi Takikawa ,  Youhei Fujimura ,  Shigeo Itoh

Inventor： Hirofumi Takikawa ,  Youhei Fujimura ,  Shigeo Itoh

IPC: H01J1/62

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/949

Abstract: A carbon substance comprises a structure and line-shaped bodies, the structure having a size ranging from about 1 μm to about 100 μm and including carbon and a metal or a metallic oxide, and the line-shaped bodies having diameters smaller than about 200 nm and including carbon as a main component thereof and growing radially from a surface of the structure. A method for manufacturing the carbon substance uses a thermal decomposition of a source gas containing carbon in the vicinity of a catalyst, wherein the catalyst comprises a first and a second materials, the first material being Ni or a Ni oxide and the second material being In or an In oxide; and the thermal decomposition is performed at a temperature ranging from about 675° C. to about 750° C. An electron emission element uses the carbon substance as an electron emission material. A composite material includes the carbon substance in its matrix.

Abstract translation: 碳物质包括结构和线状体，该结构的尺寸范围为约1μm至约100μm，并且包括碳和金属或金属氧化物，并且直径小于约200nm的线状体 并且包括碳作为其主要成分并且从结构的表面径向生长。 制造碳物质的方法使用在催化剂附近含有碳原子气体的热分解，其中催化剂包含第一和第二材料，第一材料为Ni或Ni氧化物，第二材料为In 或In氧化物; 并且热分解在约675℃至约750℃的温度下进行。电子发射元件使用碳物质作为电子发射材料。 复合材料包括其基质中的碳物质。

公开(公告)号：US06979489B2

公开(公告)日：2005-12-27

申请号：US10243269

申请日：2002-09-13

Applicant: Yicheng Lu ,  Sriram Muthukumar ,  Nuri William Emanetoglu

Inventor： Yicheng Lu ,  Sriram Muthukumar ,  Nuri William Emanetoglu

IPC: C30B25/02 ,  H01J1/304 ,  H01J9/02 ,  B32B15/00 ,  B32B9/04 ,  B32B3/00

CPC classification number: B82Y30/00 ,  B82Y15/00 ,  C30B25/02 ,  C30B29/16 ,  C30B29/60 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30446 ,  Y10S977/811 ,  Y10T428/24802 ,  Y10T428/24917

Abstract: In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01{overscore (1)}2) Al2O3 substrates as long as the ZnO grows in a columnar stucture along the c-axis [0001] of ZnO on these materials. Such self-assembled ZnO nanotips and nanotip arrays are promising for applications in field emission displays and electron emission sources, photonic bandgap devices, near-field microscopy, UV optoelectronics, and bio-chemical sensors.

Abstract translation: 在本发明中，提供了通过金属有机化学气相沉积（MOCVD）在各种基底上在较低温度下生长的自组装ZnO纳米二极管。 ZnO纳米芯片在相对低的温度下制成，使ZnO比其他宽带隙半导体（如GaN和SiC）具有独特的优势。 纳米片具有均匀的尺寸，分布和取向。 这些ZnO纳米芯片具有单晶质量，显示n型导电性，并具有良好的光学性能。 ZnO纳米片的选择性生长也已经在r-蓝宝石（SOS）上的图案化（100）硅和r-蓝宝石衬底上的无定形SiO 2上实现。 自组装ZnO纳米技术也可以选择性地生长在由R平面上沉积的半导体，绝缘体或金属制成的图案化的层或岛上（01（过滤（12）Al 2 O 2 只要ZnO沿着这些材料上的ZnO的c轴[0001]在柱状结构中生长，这些自组装的ZnO纳米尖端和纳米尖端阵列对于在场发射显示器和电子发射中的应用是有希望的 光源带隙器件，近场显微镜，紫外光电子学和生物化学传感器。

公开(公告)号：US20050225228A1

公开(公告)日：2005-10-13

申请号：US10508985

申请日：2003-03-24

Applicant: Adrian Burden ,  Hugh Bishop ,  Warren Lee

Inventor： Adrian Burden ,  Hugh Bishop ,  Warren Lee

IPC: H01J29/04 ,  H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J63/06 ,  H01J1/62 ,  H01J63/04

CPC classification number: B82Y10/00 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30446

Abstract: In a method of creating a field electron emission material, vanadium or a vanadium compound is disposed in respective locations of a substrate in order to create a plurality of emission site at said locations, at an average density of at least 10cm−2.Preferably, the vanadium or vanadium compound is in the form of particles.

Abstract translation: 在产生场电子发射材料的方法中，将钒或钒化合物设置在衬底的相应位置，以便在所述位置产生多个发射部位，平均密度为至少10％ 优选地，钒或钒化合物为颗粒形式。

公开(公告)号：US20050104499A1

公开(公告)日：2005-05-19

申请号：US11020615

申请日：2004-12-22

Applicant: Ioannis Kymissis ,  Akintunde Akinwande

Inventor： Ioannis Kymissis ,  Akintunde Akinwande

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/00 ,  H01J1/14

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30446

Abstract: A patterned field emission device fabricated using conducting or semiconducting organic materials is described.

Abstract translation: 描述了使用导电或半导体有机材料制造的图案化场致发射器件。

公开(公告)号：US06870312B2

公开(公告)日：2005-03-22

申请号：US10284796

申请日：2002-10-31

Applicant: Ioannis Kymissis ,  Akintunde Ibitayo Akinwande

Inventor： Ioannis Kymissis ,  Akintunde Ibitayo Akinwande

IPC: H01J1/304 ,  H01J9/02 ,  H01J63/04

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30446

Abstract: A patterned field emission device fabricated using conducting or semiconducting organic materials is described.

公开(公告)号：US06815884B2

公开(公告)日：2004-11-09

申请号：US09847420

申请日：2001-05-03

Applicant: Shuji Yamada ,  Kazuya Ishiwata ,  Tadayasu Meguro

Inventor： Shuji Yamada ,  Kazuya Ishiwata ,  Tadayasu Meguro

IPC: H01J162

CPC classification number: H01J1/3048 ,  H01J9/022 ,  H01J2201/30446 ,  H01J2329/00

Abstract: An electron source forming substrate wherein an insulating material film is disposed on the surface of the substrate at which surface an electron-emitting device is arranged. The insulating material film contains a plurality of metallic oxide particles having an average particle size within the range of 6 nm to 60 nm as expressed in a median value, and suppresses undesirable diffusion of Na from the substrate, thereby makes stable an electron-emitting characteristics, without an adverse effect due to the Na diffusion, even elapsing longer time.

Abstract translation: 一种电子源形成基板，其中绝缘材料膜设置在基板的表面上，在该表面上布置电子发射器件。 绝缘材料膜含有以中值表示的平均粒径在6nm〜60nm的范围内的多个金属氧化物粒子，并抑制不希望的Na从衬底的扩散，从而使电子发射特性稳定 ，由于Na扩散而没有不利影响，甚至经过更长的时间。

公开(公告)号：US06809464B2

公开(公告)日：2004-10-26

申请号：US09754273

申请日：2001-01-05

Applicant: Jun-hee Choi ,  Seung-nam Cha ,  Hang-woo Lee

Inventor： Jun-hee Choi ,  Seung-nam Cha ,  Hang-woo Lee

IPC: H01J102

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30446

Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.

Abstract translation: 提供场发射装置（FED）和制造FED的方法。 FED包括具有纳米尺寸表面特征的微型尖端。 由于微尖作为大量纳米尖端的集合，所以FED可在具有高发射电流密度的低栅极导通电压下工作，从而降低功耗。

公开(公告)号：US20040202779A1

公开(公告)日：2004-10-14

申请号：US10764806

申请日：2004-01-26

Inventor： Donald A. Shiffler JR.

IPC: B05D005/12

CPC classification number: H01J1/304 ,  H01J2201/30446

Abstract: A method for making a field emission cold cathode for use in vacuum tubes. A carbon velvet material is coated with a low work function cesiated salt and bonded to a cathode surface. Alternatively, the carbon velvet material is bonded to the cathode surface before being coated with the cesiated salt. The coating may be applied by spraying the carbon velvet material with a cesiated salt solution, or by dipping the material into a crucible of molten cesiated salt. This abstract is provided to comply with the rules requiring an abstract, and is intended to allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning the claims.

Abstract translation: 一种制造用于真空管的场致发射冷阴极的方法。 碳丝绒材料涂覆有低功函数的切割盐并结合到阴极表面。 或者，碳纤维材料在被切割的盐被涂覆之前结合到阴极表面。 涂层可以通过用切丝的盐溶液喷洒碳丝绒材料，或通过将材料浸入熔融的澄清盐的坩埚中来施加。 提供该摘要以符合要求摘要的规则，并且旨在允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US20040066127A1

公开(公告)日：2004-04-08

申请号：US10460052

申请日：2003-06-11

Inventor： Chien-Min Sung

IPC: H01J019/06 ,  H01J001/38 ,  H01J001/05 ,  H01J001/48 ,  H01J001/14

CPC classification number: H01J1/304 ,  C01B32/25 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: An amorphous diamond electrical generator having a cathode at least partially coated with amorphous diamond material and an intermediate member coupled between the cathode and an anode. The amorphous diamond material can have at least about 90% carbon atoms with at least about 20% of the carbon atoms bonded in a distorted tetrahedral coordination. The amorphous diamond coating has an energy input surface in contact with a base member of the cathode and an electron emission surface opposite the energy input surface. The electron emission surface can have an asperity height of from about 10 to about 1,000 nanometers and is capable of emitting electrons upon input of a sufficient amount of energy. The intermediate member can be coupled to the electron emission surface of the amorphous diamond coating such that the intermediate member has a thermal conductivity of less than about 100 W/mK and a resistivity of less than about 80 nullnull-cm at 20null C. The amorphous diamond electrical generator is a thermionic emission device having improved electron emission properties.

Abstract translation: 一种非晶金刚石发电机，其具有至少部分地涂覆有非晶金刚石材料的阴极和耦合在阴极和阳极之间的中间部件。 无定形金刚石材料可以具有至少约90％的碳原子，其中至少约20％的碳原子以变形的四面体配位键合。 无定形金刚石涂层具有与阴极的基底部件接触的能量输入表面和与能量输入表面相对的电子发射表面。 电子发射表面可以具有约10至约1000纳米的粗糙度高度，并且能够在输入足够量的能量时发射电子。 中间构件可以耦合到无定形金刚石涂层的电子发射表面，使得中间构件具有小于约100W / mK的热导率和在20℃下小于约80μΩ-cm的电阻率。 非晶金刚石发电机是具有改善的电子发射特性的热电子发射装置。