公开(公告)号：US20070085005A1

公开(公告)日：2007-04-19

申请号：US11449650

申请日：2006-06-09

Applicant: Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

Inventor： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

IPC: G21K7/00

CPC classification number: H01J37/026 ,  G01R31/307 ,  H01J37/29 ,  H01J2237/0045 ,  H01J2237/0047 ,  H01J2237/045 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

Abstract translation: 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

公开(公告)号：US07038223B2

公开(公告)日：2006-05-02

申请号：US10818233

申请日：2004-04-05

Applicant: Ronald Starcher

Inventor： Ronald Starcher

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0045

Abstract: A means of neutralizing the excess charge on workpieces, such as semiconductor wafers, that results from ion-implantation processes, wherein the excess positive charge on a small area of the workpiece surface is locally sensed, and in response, an appropriate dose of charge-compensating electrons is delivered from an electron emission source to the area of excess charge on the workpiece. A charge-sensing probe and a voltage-controlled electron generator array are configurationally and operatively coupled in a closed feedback loop, and are made to scan the surface of the workpiece, in close but non-contacting proximity to the workpiece. Arrays of charge-sensing probes and electron generator arrays can be configured for rapid coverage of the implanted areas of the workpiece. The present invention has significant advantages over other methods, such as plasma and electron showers and plasma flood systems, for neutralizing the excess charge due to ion implantation.

Abstract translation: 一种中和离子注入工艺产生的工件（例如半导体晶片）上的过量电荷的方法，其中局部检测在工件表面的小区域上的过量正电荷，并且作为响应，适当剂量的电荷 - 补偿电子从电子发射源输送到工件上的过量电荷区域。 电荷感测探针和电压控制的电子发生器阵列在闭合反馈回路中构造和操作地耦合，并且被制造成以接近但非接近的工件扫描工件的表面。 电荷感测探针和电子发生器阵列的阵列可被配置为快速覆盖工件的注入区域。 本发明与诸如等离子体和电子淋浴和等离子体洪水系统的其它方法相比具有显着的优点，用于中和由于离子注入引起的过量电荷。

公开(公告)号：US20060071167A1

公开(公告)日：2006-04-06

申请号：US11282645

申请日：2005-11-21

Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

IPC: G21K7/00

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/281 ,  H01J2237/31701

Abstract: To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 102, by scanning it at a predetermined acceleration voltage, the positive charge 106 is formed on the surface of the insulator 101, and the secondary electrons 104 are attracted in the hole by this electric field, and the hole is continuously scanned at an acceleration voltage different from the acceleration voltage, and the sample is observed. When the wires embedded in the insulator are to be observed, by observing the insulator at a predetermined acceleration voltage, an electron beam is allowed to enter the sample, and the sample is continuously scanned at an acceleration voltage different from the acceleration voltage, and hence the existence of wires is reflected as a change in the charge of the surface, and it is observed. In either case, the acceleration voltage before observation is different from the one during observation, and the sample surface is temporarily radiated at an acceleration voltage positively generating a positive or negative charge, and thereafter, the acceleration voltage is returned to a one suited to observation, and the sample is observed.

Abstract translation: 为了可以观察接触孔和内部电线的底部，在观察接触孔102时，通过以预定的加速电压扫描，正电荷106形成在绝缘体101的表面上，次级 电子104通过该电场被吸引在孔中，并且以与加速电压不同的加速电压连续地扫描孔，并且观察样品。 当要观察嵌入在绝缘体中的电线时，通过以预定的加速电压观察绝缘体，允许电子束进入样品，并且以不同于加速电压的加速电压连续扫描样品，因此 电线的存在被反映为表面电荷的变化，并且被观察。 在任一种情况下，观察前的加速电压与观察期间的加速电压不同，并且以正向或正负电荷的正电荷的加速电压暂时照射样品表面，然后将加速电压恢复为适合于观察的加速电压 ，并观察样品。

公开(公告)号：US06972412B2

公开(公告)日：2005-12-06

申请号：US10664796

申请日：2003-09-18

Applicant: Jacob Johannes Scholtz ,  William Ralph Knowles ,  Bradley Lamar Thiel ,  Gerardus Van Veen ,  Rene Peter Marie Schroemges

Inventor： Jacob Johannes Scholtz ,  William Ralph Knowles ,  Bradley Lamar Thiel ,  Gerardus Van Veen ,  Rene Peter Marie Schroemges

IPC: H01J37/244 ,  G01N23/00 ,  G01Q30/20 ,  G01Q70/10 ,  H01J20060101 ,  H01J37/00 ,  H01J37/28

CPC classification number: H01J37/26 ,  H01J37/244 ,  H01J2237/0045 ,  H01J2237/2448 ,  H01J2237/2605

Abstract: A particle-optical apparatus comprising a sample holder for receiving a sample, a particle source embodied to produce a primary beam of first electrically charged particles along an optical axis for the purpose of irradiating the sample, first detector embodied to detect second electrically charged particles that emanate from the sample as a result of the irradiation thereof, a detection space that at the least is formed by the sample holder and the first detector, and an immersion lens embodied to produce a magnetic field for the purpose of focusing the primary beam in the vicinity of the sample holder. The first detector are embodied to produce an electric field in the detection space, and the detection space is embodied to comprise a gas.

Abstract translation: 一种粒子光学装置，包括用于接收样品的样品保持器，用于产生用于照射样品的光轴沿着光轴产生第一带电粒子的主光束的粒子源，实施为检测第二带电粒子的第一检测器， 作为其照射的结果，从样品发出至少由样品保持器和第一检测器形成的检测空间，以及用于产生磁场的浸没透镜，用于将主光束聚焦在 样品架附近。 第一检测器被实施为在检测空间中产生电场，并且检测空间被实施为包括气体。

公开(公告)号：US20040124356A1

公开(公告)日：2004-07-01

申请号：US10664796

申请日：2003-09-18

Inventor： Jacob Johannes Scholtz ,  William Ralph Knowles ,  Bradley Lamar Thiel ,  Gerardus Van Veen ,  Rene Peter Marie Schroemges

IPC: G01N023/00

CPC classification number: H01J37/26 ,  H01J37/244 ,  H01J2237/0045 ,  H01J2237/2448 ,  H01J2237/2605

Abstract: A particle-optical apparatus comprising a sample holder for receiving a sample, a particle source embodied to produce a primary beam of first electrically charged particles along an optical axis for the purpose of irradiating the sample, first detector embodied to detect second electrically charged particles that emanate from the sample as a result of the irradiation thereof, a Detection space that at the least is formed by the sample holder and the first detector, and an immersion lens embodied to produce a magnetic field for the purpose of focusing the primary beam in the vicinity of the sample holder. The first detector are embodied to produce an electric field in the detection space, and the detection space is embodied to comprise a gas.

Abstract translation: 一种粒子光学装置，包括用于接收样品的样品保持器，用于产生用于照射样品的光轴沿着光轴产生第一带电粒子的主光束的粒子源，实施为检测第二带电粒子的第一检测器， 作为其照射的结果，从样品发出至少由样品保持器和第一检测器形成的检测空间以及用于产生磁场的浸没透镜，用于将主光束聚焦在 样品架附近。 第一检测器被实施为在检测空间中产生电场，并且检测空间被实施为包括气体。

公开(公告)号：US5399871A

公开(公告)日：1995-03-21

申请号：US243053

申请日：1994-05-16

Applicant: Hiroyuki Ito ,  Jonathan England ,  Frederick Plumb ,  Ian Fotheringham

Inventor： Hiroyuki Ito ,  Jonathan England ,  Frederick Plumb ,  Ian Fotheringham

IPC: C23C14/48 ,  H01J37/02 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265 ,  H05H1/00

CPC classification number: H01J37/026 ,  H01J2237/0045 ,  H01J2237/31701

Abstract: A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.

Abstract translation: 一种用于在半导体衬底中注入离子的等离子体放电系统，包括用于开发含有低能电子的等离子体和低能电子源的等离子体和低能电子源，用于磁场强化传输到负偏置的磁场辅助电子限制管并进入 离子束轴向流过管至半导体衬底，用于自调节和中和衬底表面上的正电荷，而不会引起衬底的显着负电荷。

公开(公告)号：US5293508A

公开(公告)日：1994-03-08

申请号：US865275

申请日：1992-04-08

Applicant: Shigeru Shiratake ,  Hirohisa Yamamoto

Inventor： Shigeru Shiratake ,  Hirohisa Yamamoto

IPC: C23C14/48 ,  C23C14/54 ,  C23C30/00 ,  H01J37/24 ,  H01J37/317 ,  H01L21/265 ,  H05F3/04

CPC classification number: C23C8/36 ,  H01J37/026 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/0045 ,  H01J2237/1202 ,  H01J2237/1215 ,  H01J2237/20

Abstract: An ion implanter encloses a semiconductor substrate adjacent to a fixing member which retains a semiconductor substrate on a supporting bed. The ion implanter includes a ring electrode for generating secondary electrons in response to incident ions and a cup-like electrode for directing the secondary ions to the semiconductor substrate. The ring electrode is negatively biased with respect to the supporting bed and the cup-like electrode surrounds the outer edge of the semiconductor substrate. The ion implanter increases the quantity of the secondary electrons produced and efficiently directs them to the semiconductor substrate. The semiconductor substrate which is electrically charged by implanting ions is neutralized, preventing dielectric breakdown from occurring in an insulating film.

Abstract translation: 离子注入机包围与固定部件相邻的半导体衬底，该固定部件将半导体衬底保持在支撑床上。 离子注入机包括用于响应于入射离子产生二次电子的环形电极和用于将二次离子引导到半导体衬底的杯形电极。 环状电极相对于支撑床呈负偏置，杯形​​电极围绕半导体衬底的外边缘。 离子注入机增加产生的二次电子的量并有效地将它们引导到半导体衬底。 通过注入离子而带电的半导体衬底被中和，防止在绝缘膜中发生电介质击穿。