公开(公告)号：US08288722B2

公开(公告)日：2012-10-16

申请号：US12926489

申请日：2010-11-22

Applicant: Masaki Hasegawa ,  Hiroya Ohta

Inventor： Masaki Hasegawa ,  Hiroya Ohta

IPC: H01J37/26

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/2482 ,  H01J2237/2855

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

Abstract translation: 电子束检查装置对反射电子进行成像并消除由电子束照射产生的负电荷。 照射紫外线，照射紫外线的区域作为光电子图像显示。 光电子图像和反射电子图像在彼此重叠的状态下显示在监视器上，以容易地掌握图像之间的位置关系和它们之间的尺寸差异。 具体地，电子束的照射区域的形状包括在显示屏上照射的紫外线区域的形状。 调整电子束的照射区域中的紫外线的强度，同时维持反射电子图像的反射电子成像条件。 此外，在监视器上控制紫外线量调节机构，使得在观察紫外线照射期间获得的反射电子图像的同时调节紫外线的量。

公开(公告)号：US20110068267A1

公开(公告)日：2011-03-24

申请号：US12926489

申请日：2010-11-22

Applicant: Masaki HASEGAWA ,  Hiroya OHTA

Inventor： Masaki HASEGAWA ,  Hiroya OHTA

IPC: H01J37/26 ,  H01J37/29

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/2482 ,  H01J2237/2855

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

公开(公告)号：US07612570B2

公开(公告)日：2009-11-03

申请号：US11847790

申请日：2007-08-30

Applicant: Hiroyuki Suhara

Inventor： Hiroyuki Suhara

IPC: G01R31/305

CPC classification number: G01R31/305 ,  G03G15/5037 ,  G03G2215/00033 ,  G03G2215/00054 ,  H01J37/244 ,  H01J37/268 ,  H01J2237/0047 ,  H01J2237/0048 ,  H01J2237/2444 ,  H01J2237/24564 ,  H01J2237/2594

Abstract: A surface-potential distribution measuring apparatus includes an electron gun, an electron-beam optical system, an electron-emission panel, a detector, and a control system. The electron-beam optical system is located between the electron gun and a sample, and focuses a beam of electrons emitted from the electron gun to the surface of the sample. The electron-emission panel is located near the sample to be collided with at least part of the electrons via the sample, and emits secondary electrons corresponding to the number of collided electrons. The detector detects at least part of the secondary electrons. The control system obtains potential distribution on the surface of the sample based on a detection result obtained by the detector.

Abstract translation: 表面电位分布测量装置包括电子枪，电子束光学系统，电子发射面板，检测器和控制系统。 电子束光学系统位于电子枪和样品之间，并将从电子枪发射的电子束聚焦到样品的表面。 电子发射面板位于样品附近，通过样品与至少部分电子碰撞，并发射对应于碰撞电子数的二次电子。 检测器检测至少部分二次电子。 控制系统根据检测器得到的检测结果，获得样品表面的电位分布。

公开(公告)号：US07547884B2

公开(公告)日：2009-06-16

申请号：US11449650

申请日：2006-06-09

Applicant: Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

Inventor： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01J37/026 ,  G01R31/307 ,  H01J37/29 ,  H01J2237/0045 ,  H01J2237/0047 ,  H01J2237/045 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

Abstract translation: 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

公开(公告)号：US20030094572A1

公开(公告)日：2003-05-22

申请号：US10166774

申请日：2002-06-12

Applicant: Hitachi, Ltd.

Inventor： Miyako Matsui ,  Mari Nozoe

IPC: H01J037/26

CPC classification number: H01J37/28 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: In a method for inspecting positions and types of defects on wafers with circuit patterns in the semiconductor manufacturing process, a highly sensitive inspection is made regardless of the types and materials of junctions of circuit patterns of the semiconductor devices, different kinds of defects being distinguished from one another. Further, extraordinary electrification of the circuit pattern is prevented and an area to be exposed to an electron beam is controlled evenly and at a desired voltage. Thus, this method contributes to the early setup of manufacturing processes of integrated circuits and early measures against defects, increasing the reliability and productivity of the semiconductor devices. During an inspection of positions and types of defects on a wafer with a circuit pattern in the semiconductor manufacturing process, with the use of a charged-particle beam from a charged-particle source, an optical beam from an optical source as well as a charged-particle beam are applied to a junction of the circuit pattern of the wafer placed on a wafer holder. Thus, regardless of the types and materials of circuit patterns, a highly sensitive inspection is made according to contrasts of the defects in an image captured.

Abstract translation: 在半导体制造工艺中利用电路图案检查晶片上的缺陷的位置和类型的方法中，无论半导体器件的电路图案的结的类型和材料如何，均进行高灵敏度检查，不同种类的缺陷与 另一个。 此外，防止电路图案的异常带电，并且暴露于电子束的区域被均匀地控制并且处于期望的电压。 因此，该方法有助于早期建立集成电路的制造工艺和早期的缺陷措施，提高半导体器件的可靠性和生产率。 在利用半导体制造工艺中的电路图案的晶圆上的缺陷位置和类型的检查中，使用来自带电粒子源的带电粒子束，来自光源的光束以及带电粒子 - 粒子束被施加到放置在晶片保持器上的晶片的电路图案的结。 因此，无论电路图案的类型和材料如何，根据所拍摄图像中的缺陷的对比度进行高灵敏度检查。

公开(公告)号：US06476387B1

公开(公告)日：2002-11-05

申请号：US09311268

申请日：1999-05-14

Applicant: Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Yuichi Hamamura ,  Michinobu Mizumura ,  Yasuhiro Koizumi ,  Hidemi Koike

Inventor： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Yuichi Hamamura ,  Michinobu Mizumura ,  Yasuhiro Koizumi ,  Hidemi Koike

IPC: H01J3730

CPC classification number: H01J37/28 ,  H01J2237/0047 ,  H01J2237/2482

Abstract: In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

Abstract translation: 在通过在至少部分地被绝缘体膜覆盖的样品上照射带电束的样品的表面的方法中，紫外光可能作为脉冲照射在样品（衬底）上，从而将绝缘体 由于光电导效应而成为导电材料，从而将样品（基板）的表面转变为导电材料，使得带电粒子从接地部分接地，以防止带电粒子由于带电粒子而被斥力 被照射的带电光束积聚在形成在样品（基板）表面上的绝缘体中。

公开(公告)号：US5432345A

公开(公告)日：1995-07-11

申请号：US958249

申请日：1992-10-08

Applicant: Michael A. Kelly

Inventor： Michael A. Kelly

IPC: G01Q30/02 ,  H01J37/02 ,  H01J37/00

CPC classification number: H01J37/026 ,  H01J2237/0045 ,  H01J2237/0047

Abstract: Electron or ion spectroscopy methods are commonly used for the surface analysis of insulating materials. During the illumination of the surface, electrons are emitted leaving behind a positively charged surface. The positively charged surface causes the energy of the emitted electrons to change and interferes with the analysis of their energy spectra. Conventionally, a source of neutralizing low energy electrons is directed to the illuminated region of the surface to neutralize the positive surface charge. The addition, to the non-illuminated region of the material, of a flux of positive particles or a means of emitting negative particles causes a discharge of the positive charge from the illuminated area of the material and establishes a dynamic equilibrium over the surface of the entire specimen. This permits the surface to be maintained at an arbitrarily uniform level controlled by the relative fluxes of the emitted electrons, the neutralizing electron flux, and the discharging means.

Abstract translation: 电子或离子光谱法通常用于绝缘材料的表面分析。 在照射表面期间，发射电子留下带正电的表面。 带正电的表面使发射的电子的能量发生变化并干扰其能谱的分析。 通常，中和低能电子的源被引导到表面的照射区域以中和正表面电荷。 向材料的非照射区域添加正极粒子的通量或发射负极的装置会引起正电荷从材料的照射区域的放电，并在材料的表面上形成动态平衡 整个标本。 这允许表面保持在由发射电子的相对通量，中和电子通量和放电装置控制的任意均匀的水平。