公开(公告)号：US06507029B1

公开(公告)日：2003-01-14

申请号：US09255700

申请日：1999-02-23

Applicant: Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

Inventor： Norimasa Nishimura ,  Akira Shimase ,  Junzou Azuma ,  Asahiro Kuni ,  Hiroya Koshishiba

IPC: H01J3730

CPC classification number: B82Y15/00 ,  H01J37/026 ,  H01J2237/0047 ,  H01J2237/28

Abstract: In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

Abstract translation: 在用于观察，检查，处理或分析作为基板或样品的半导体晶片的电子粒子机中，将光源安装在准备室中。 使用静电用卡盘夹住半导体晶片的夹持台设置有用于连接到地面的部件，使得它们与夹持的半导体晶片接触。 在观察，检查，处理或分析之后释放使用静电的卡盘后，用来自光源的光照射半导体晶片的表面和用于连接到地球的部分。 这为半导体晶片的表面提供导电性，从而通过用于连接到地球的部件从表面去除积聚在半导体晶片上的电荷。

公开(公告)号：US06344115B1

公开(公告)日：2002-02-05

申请号：US09417996

申请日：1999-10-13

Applicant: Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

Inventor： Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

IPC: C23C1400

CPC classification number: H01J37/18 ,  C23C16/26 ,  H01J2237/317

Abstract: A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.

Abstract translation: 使用改进的带电粒子束工艺的图案形成方法和带电粒子束处理系统，当工件被排出到大气中之后，通过被吸收并附着在工件表面上的反应气体有效地防止工件的腐蚀 图案形成。 带电粒子束处理系统作为主要部件包括设置有离子束光学系统的离子束室，设置有气体喷嘴的处理室，反应气体通过该喷嘴吹向工件，负载锁定室通过 一个闸阀到处理室。 负载锁定室能够产生用于通过溅射处理工件的表面的惰性气体的等离子体。 在通过反应性处理在处理室中形成图案之后，工件返回到装载锁定室，包括在反应气体的环境中用带电粒子束照射工件的表面，并且对工件进行 等离子体处理，以在图案形成期间去除被工件吸附的反应气体并附着到工件上。

公开(公告)号：US06303932B1

公开(公告)日：2001-10-16

申请号：US09195711

申请日：1998-11-19

Applicant: Yuichi Hamamura ,  Akira Shimase ,  Junzou Azuma ,  Michinobu Mizumura ,  Norimasa Nishimura ,  Yasuhiro Koizumi ,  Hidemi Koike

Inventor： Yuichi Hamamura ,  Akira Shimase ,  Junzou Azuma ,  Michinobu Mizumura ,  Norimasa Nishimura ,  Yasuhiro Koizumi ,  Hidemi Koike

IPC: H01J37244

CPC classification number: H01J37/28 ,  H01J2237/004 ,  H01J2237/2817

Abstract: A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.

Abstract translation: 二次带电粒子图像采集方法及其装置，用于检测二次带电粒子图像。 该方法包括以下步骤：用聚焦的带电粒子束照射样品的表面并检测从样品表面发出的二次带电粒子，基于检测到的二次带电粒子获得二次带电粒子图像，照射正离子 在被照射聚焦的带电粒子束的样品的表面上射束，并通过正离子束的照射在样品的表面上引导导电层，并在导电层的表面上扩散电荷。

公开(公告)号：US5976328A

公开(公告)日：1999-11-02

申请号：US788421

申请日：1997-01-27

Applicant: Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

Inventor： Junzou Azuma ,  Akira Shimase ,  Yuichi Hamamura ,  Hidemi Koike

IPC: H01J37/305 ,  C23C16/26 ,  H01J37/18 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/34

CPC classification number: H01J37/18 ,  C23C16/26 ,  H01J2237/317

Abstract: A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber (18) provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.

Abstract translation: 使用改进的带电粒子束工艺的图案形成方法和带电粒子束处理系统，当工件被排出到大气中之后，通过被吸收并附着在工件表面上的反应气体有效地防止工件的腐蚀 图案形成。 带电粒子束处理系统作为主要部件包括设置有离子束光学系统的离子束室，设置有气体喷嘴的处理室（18），通过该喷嘴将反应气体吹向工件，加载锁 室通过闸阀连接到处理室。 负载锁定室能够产生用于通过溅射处理工件的表面的惰性气体的等离子体。 在通过反应性处理在处理室中形成图案之后，工件返回到装载锁定室，包括在反应气体的环境中用带电粒子束照射工件的表面，并且对工件进行 等离子体处理，以在图案形成期间去除被工件吸附的反应气体并附着到工件上。

公开(公告)号：US5683547A

公开(公告)日：1997-11-04

申请号：US273780

申请日：1994-07-12

Applicant: Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

Inventor： Junzou Azuma ,  Fumikazu Itoh ,  Satoshi Haraichi ,  Akira Shimase ,  Junichi Mori ,  Takahiko Takahashi ,  Emiko Uda

IPC: H01J37/305 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/30

CPC classification number: H01L21/76892 ,  H01J37/3056 ,  H01L21/32136 ,  H01L21/76879 ,  H01J2237/006 ,  H01J2237/31744

Abstract: A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.

Abstract translation: 一种处理方法和装置，其特征在于，在蚀刻气体气氛中，通过用离子束或电子束等聚焦能量束照射样品，使用聚焦能量束进行聚焦能量束照射区域的局部能量束处理。 作为蚀刻气体，使用与常规方法不同组成的混合气体，并将气体均匀地供给到蚀刻区域，并且这种混合气体的至少一个成分是用于蚀刻样品的自发反应气体 自发和各向同性。 通过这种布置，由于单一蚀刻气体引起反应太剧烈或几乎几乎不发生反应，因此可以局部蚀刻局部蚀刻不可能提供的材料。

公开(公告)号：US5504340A

公开(公告)日：1996-04-02

申请号：US207860

申请日：1994-03-09

Applicant: Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

Inventor： Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

IPC: G01Q30/20 ,  G01Q60/52 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3056 ,  H01J2237/0802 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/0817 ,  H01J2237/31732 ,  H01J2237/31742 ,  H01J2237/31749

Abstract: A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.

Abstract translation: 实现该方法的处理方法和处理装置使用聚焦离子束发生器。 该装置包括：等离子体或液体金属离子源，其产生不影响样品电特性的离子;离子束发生器，用于将离子源离子离子束提取到离子束;离子束聚焦装置，用于聚焦离子束;辐照器， 将聚焦的离子束照射到样品上，并且在其中安装待照射用于处理的样品的样品室。 将聚焦离子束照射到诸如硅晶片或器件的样品上以在样品的特定位置上进行精细加工，细层积累和分析。

公开(公告)号：US5358806A

公开(公告)日：1994-10-25

申请号：US854861

申请日：1992-03-19

Applicant: Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

Inventor： Satoshi Haraichi ,  Fumikazu Itoh ,  Akira Shimase ,  Hiroshi Yamaguchi ,  Junzou Azuma ,  Yasuhiro Koizumi

IPC: G03F1/26 ,  G03F1/74 ,  G03F9/00

CPC classification number: H01J37/228 ,  G03F1/74 ,  H01J37/3056 ,  G03F1/26 ,  H01J2237/2482 ,  H01J2237/30466

Abstract: A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.

Abstract translation: 具有设置在透明基板上的移相器的相移掩模的缺陷形成为预定图案并且用于移动透过其的曝光光的相位和设置在移相器和透明基板之间的蚀刻阻挡层， 对于移相器经受的蚀刻和曝光的透明度的蚀刻是通过沿相位的整个厚度相对于蚀刻停止层选择性蚀刻缺陷型缺陷的相移器的缺陷部分而被校正的 并且通过将位于蚀刻的缺陷部分下方的蚀刻阻挡层和透明基板的一部分穿孔相当于用于曝光光的移相器的光路的大小的深度，蚀刻是使用的反应性蚀刻 带电粒子束和反应性气体，并且通过利用被蚀刻的部分的底表面变平 移相器被选择性蚀刻的事实。

公开(公告)号：US5134965A

公开(公告)日：1992-08-04

申请号：US538150

申请日：1990-06-14

Applicant: Mitsuo Tokuda ,  Junzou Azuma ,  Toru Otsubo ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki

Inventor： Mitsuo Tokuda ,  Junzou Azuma ,  Toru Otsubo ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32

CPC classification number: C23C16/45502 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32247 ,  H01J37/32449 ,  H01J2237/3321

Abstract: Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate.Further disclosed is a plasma processing apparatus and a method therefor, the apparatus comprising; a plasma chamber for maintaining plasma generated in the inside of the plasma chamber so as to perform plasma processing; a first microwave accumulating and intensifying cavity resonance chamber connected with the plasma chamber through a first slot plate; a second microwave accumulating and intensifying cavity resonance chamber connected with the first cavity resonance chamber through a second slot plate parallel to the first slot plate; and a microwave generator for leading a microwave into the second cavity resonance chamber through a waveguide.

Abstract translation: 公开了一种等离子体CVD装置及其方法，该装置包括：微波产生部分; 用于使从微波产生部供给的微波共振的同轴空腔谐振器; 设置在空腔谐振器的轴的下部的多个气体导入口和用于引入所提供的CVD气体的空腔谐振器的周壁部; 以及等离子体产生室，其中CVD气体通过气体引入入口进入等离子体发生室并使其均匀地流动到衬底的表面上受到微波在空腔谐振器中通过谐振强化并通过耦合辐射 使得产生均匀的等离子体，从而在衬底的表面上形成薄膜。 另外公开了一种等离子体处理装置及其方法，该装置包括： 等离子体室，用于保持等离子体室内部产生的等离子体，以进行等离子体处理; 通过第一槽板与等离子体室连接的第一微波积聚和增强腔共振腔; 第二微波积聚和增强腔谐振室，通过与第一槽板平行的第二槽板与第一空腔共振室连接; 以及微波发生器，用于通过波导将微波引导到第二腔谐振室。

公开(公告)号：US5825035A

公开(公告)日：1998-10-20

申请号：US745657

申请日：1996-11-08

Applicant: Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

Inventor： Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

IPC: H01J37/317

CPC classification number: H01J37/3056 ,  H01J2237/0802 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/0817 ,  H01J2237/31732 ,  H01J2237/31742

Abstract: A processing method using a plasma ion source for generating a focused ion beam, characterized by covering, with an insulator, an inner wall of a plasma holding vessel excluding a reference electrode for applying a voltage to a plasma and an ion extraction electrode for extracting ions from the plasma, and employing means of continuously controlling the absolute value of an ion beam current in a range of from 1 to 10 .mu.A by changing the absolute value of an ion extraction voltage applied between the reference electrode and the ion extraction electrode in a range of from 0 to 100 V; and an apparatus for carrying out the processing method. This is advantageous in stabilizing the ion beam current and in preventing the ion beam from being made dim even when the current value of the ion beam is changed.

Abstract translation: 一种使用等离子体离子源产生聚焦离子束的处理方法，其特征在于，用绝缘体覆盖除了用于向等离子体施加电压的参考电极之外的等离子体保持容器的内壁和用于提取离子的离子提取电极 并且通过改变在参考电极和离子提取电极之间施加的离子提取电压的绝对值，在1至10μA的范围内连续地控制离子束电流的绝对值的方法， 范围为0〜100V; 以及用于执行处理方法的装置。 这有利于稳定离子束电流，并且即使当离子束的电流值改变时也防止离子束变暗。

公开(公告)号：US5583344A

公开(公告)日：1996-12-10

申请号：US595993

申请日：1996-02-09

Applicant: Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

Inventor： Michinobu Mizumura ,  Yuuichi Hamamura ,  Junzou Azuma ,  Akira Shimase ,  Takashi Kamimura ,  Fumikazu Itoh ,  Kaoru Umemura ,  Yoshimi Kawanami ,  Yuuichi Madokoro

IPC: G01Q30/20 ,  G01Q60/52 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3056 ,  H01J2237/0802 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/0817 ,  H01J2237/31732 ,  H01J2237/31742 ,  H01J2237/31749

Abstract: A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.