Abstract:
A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.
Abstract:
A method for establishing a parametric model of a semiconductor process is provided. A first intermediate result is generated according to layout data and a non-parametric model of the semiconductor process. A first response is obtained according to the first intermediate result. A specific mathematical function is selected from a plurality of mathematical functions, and the parametric model is obtained according to the specific mathematical function. A second intermediate result is generated according to the layout data and the parametric model. A second response is obtained according to the second intermediate result. It is determined whether the parametric model is an optimal model according to the first and second responses.
Abstract:
The present invention generally relates to a low temperature plasma probe for desorbing and ionizing at least one analyte in a sample material and methods of use thereof. In one embodiment, the invention generally relates to a low temperature plasma probe including: a housing having a discharge gas inlet port, a probe tip, two electrodes, and a dielectric barrier, in which the two electrodes are separated by the dielectric barrier, in which application of voltage from a power supply generates a low temperature plasma, and in which the low temperature plasma is propelled out of the discharge region by the electric field and/or the discharge gas flow.
Abstract:
Methods and apparatus are disclosed for the preparation of microscopic samples using light pulses. Material volumes greater than 100 μm3 are removed. The methods include inspecting an object with a scanning electron microscope (SEM) or a focused ion beam (FIB). The inspection includes recording an image of the object. The methods also includes delineating within the object a region to be investigated, and delineating a laser-machining path based on the image of the object so that a sample can be prepared out of the object. The methods further include using laser-machining along the delineated laser-machining path to remove a volume that is to be ablated, and inspecting the object with the scanning electron microscope (SEM) or a focused ion beam (FIB).
Abstract:
An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser focused onto a line on a surface of the specimen, a table unit which mounts the specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from the specimen and passed through a filter which blocks diffraction light resulting from patterns formed on the specimen, a signal processor which processes a signal outputted from the image sensor of the detection optical unit to extract defects of the specimen, and a display unit which displays information of defects extracted by the signal processor. The filter is adjustable.
Abstract:
An apparatus for detecting defects on a specimen including am illumination optical unit which obliquely projects a laser onto a region which is longer in one direction than in a direction transverse to said one direction on a surface of a specimen, a table unit which mounts said specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from said specimen in both directions of the one direction and the direction transverse and which reflected light in both directions is formed on said image sensor while said table is moving, a signal processor which processes a signal outputted from said image sensor of said detection optical unit to extract defects of said specimen. A display unit which displays information of defects extracted by said signal processor.
Abstract:
A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.
Abstract:
Apparatus for creating scaled three-dimensional physical models of characteristics of microscopic objects, includes a transducer apparatus including a transducer for creating first electrical signals representative of the magnitude of a physical characteristic of the microscopic object at a selected point within a selected area thereof, the first electrical signals having a first component defining said selected point and a second component related to the magnitude of the physical characteristic, a material shaping apparatus configured to create a physical model in a workspace, the workspace having an area related to the selected area of the microscopic object by a first selected scale factor, the material shaping apparatus including apparatus responsive to second electrical signals representing x, y, and z co-ordinates in the workspace for directing the formation of the physical model; and control apparatus, connected to the transducer apparatus and the material shaping apparatus, for converting the first electrical signals from the transducer to the second electrical signals and supplying the electrical signals to the material shaping apparatus, the control apparatus processing the first electrical signals according to the first and second selected scale factors.
Abstract:
A defect detecting apparatus including an illumination system for radiating a light of a plane wave linearly to a substrate having repetitive patterns of different pitches; a focusing optical system for focusing a light image reflected from the substrate thus illuminated by the illumination system; a spatial filter disposed intermediate the focusing optical system so as to shield a diffraction light from repetitive patterns of a small pitch on the substrate; a detector for detecting the light image formed by the focusing optical system; an erasing means for comparing and erasing signals which are generated on the basis of repetitive patterns of a large pitch and obtained through the spatial filter, out of signals detected by the detector; and a defect detecting means for detecting defects on the substrate in accordance with a signal detected by the detector, as well as a method applied to the said apparatus.
Abstract:
This disclosure is concerned with a process of and apparatus for producing relatively low energy electron beams through pulsed cold-cathode beam generation in a mode of operation involving an important intermediate region of a substantially linear depth-dose profile characteristic that reduces the sensitivity to possible voltage variations, and with improved triggering structures that significantly improve reliability and minimize erratic pulse generation and missing pulses, thus particularly adapting the process and apparatus for such stringent applications as production-line sterilization of surfaces, materials or workpieces passed by the apparatus.