HYBRID FEATURE ETCHING AND BEVEL ETCHING SYSTEMS
    41.
    发明申请
    HYBRID FEATURE ETCHING AND BEVEL ETCHING SYSTEMS 有权
    混合特征蚀刻和水蚀蚀系统

    公开(公告)号:US20150013906A1

    公开(公告)日:2015-01-15

    申请号:US13942502

    申请日:2013-07-15

    Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

    Abstract translation: 一种等离子体处理系统,至少具有用于对基板进行等离子体处理并利用至少第一处理状态和第二处理状态的等离子体处理室。 在第一处理过程期间,等离子体存在于衬底的中心区域之上,以在第一处理状态期间至少执行中心区域的等离子体处理。 在第二处理状态期间,等离子体不存在于基板的中心区域上方,但在斜边缘区域附近存在,以至少在第二处理状态期间执行斜面边缘区域的等离子体处理。 在第二处理状态期间,上电极处于RF浮置状态,并且衬底设置在下电极表面上。

    METHOD AND SYSTEM FOR ESTABLISHING PARAMETRIC MODEL
    42.
    发明申请
    METHOD AND SYSTEM FOR ESTABLISHING PARAMETRIC MODEL 有权
    建立参数模型的方法和系统

    公开(公告)号:US20140200866A1

    公开(公告)日:2014-07-17

    申请号:US13742881

    申请日:2013-01-16

    Abstract: A method for establishing a parametric model of a semiconductor process is provided. A first intermediate result is generated according to layout data and a non-parametric model of the semiconductor process. A first response is obtained according to the first intermediate result. A specific mathematical function is selected from a plurality of mathematical functions, and the parametric model is obtained according to the specific mathematical function. A second intermediate result is generated according to the layout data and the parametric model. A second response is obtained according to the second intermediate result. It is determined whether the parametric model is an optimal model according to the first and second responses.

    Abstract translation: 提供了一种用于建立半导体工艺的参数模型的方法。 根据布局数据和半导体工艺的非参数模型生成第一中间结果。 根据第一中间结果获得第一响应。 从多个数学函数中选择具体的数学函数,并且根据具体的数学函数获得参数模型。 根据布局数据和参数模型生成第二个中间结果。 根据第二中间结果获得第二响应。 根据第一和第二响应确定参数模型是否是最优模型。

    Methods and Apparatus for the Preparation of Microscopy Samples by Using Pulsed Light
    44.
    发明申请
    Methods and Apparatus for the Preparation of Microscopy Samples by Using Pulsed Light 有权
    用脉冲光制备显微镜样品的方法和装置

    公开(公告)号:US20130213945A1

    公开(公告)日:2013-08-22

    申请号:US13765022

    申请日:2013-02-12

    Applicant: Heiko Stegmann

    Inventor: Heiko Stegmann

    Abstract: Methods and apparatus are disclosed for the preparation of microscopic samples using light pulses. Material volumes greater than 100 μm3 are removed. The methods include inspecting an object with a scanning electron microscope (SEM) or a focused ion beam (FIB). The inspection includes recording an image of the object. The methods also includes delineating within the object a region to be investigated, and delineating a laser-machining path based on the image of the object so that a sample can be prepared out of the object. The methods further include using laser-machining along the delineated laser-machining path to remove a volume that is to be ablated, and inspecting the object with the scanning electron microscope (SEM) or a focused ion beam (FIB).

    Abstract translation: 公开了使用光脉冲制备微观样品的方法和装置。 去除大于100 mum3的物料体积。 这些方法包括用扫描电子显微镜(SEM)或聚焦离子束(FIB)检查物体。 检查包括记录对象的图像。 该方法还包括在对象内描绘待研究的区域,并且基于对象的图像描绘激光加工路径,从而可以从对象中准备样本。 所述方法还包括沿着描绘的激光加工路径使用激光加工以去除要消融的体积,并用扫描电子显微镜(SEM)或聚焦离子束(FIB)检查物体。

    Apparatus for creating three-dimensional physical models of
characteristics of microscopic objects
    48.
    发明授权
    Apparatus for creating three-dimensional physical models of characteristics of microscopic objects 失效
    用于创建微观物体特征的三维物理模型的装置

    公开(公告)号:US5818042A

    公开(公告)日:1998-10-06

    申请号:US898383

    申请日:1997-07-22

    Abstract: Apparatus for creating scaled three-dimensional physical models of characteristics of microscopic objects, includes a transducer apparatus including a transducer for creating first electrical signals representative of the magnitude of a physical characteristic of the microscopic object at a selected point within a selected area thereof, the first electrical signals having a first component defining said selected point and a second component related to the magnitude of the physical characteristic, a material shaping apparatus configured to create a physical model in a workspace, the workspace having an area related to the selected area of the microscopic object by a first selected scale factor, the material shaping apparatus including apparatus responsive to second electrical signals representing x, y, and z co-ordinates in the workspace for directing the formation of the physical model; and control apparatus, connected to the transducer apparatus and the material shaping apparatus, for converting the first electrical signals from the transducer to the second electrical signals and supplying the electrical signals to the material shaping apparatus, the control apparatus processing the first electrical signals according to the first and second selected scale factors.

    Abstract translation: 用于创建微观物体特征的缩放三维物理模型的装置包括换能器装置,其包括用于产生代表在其选定区域内的选定点处的微观物体的物理特性的大小的第一电信号的换能器, 第一电信号具有限定所述选定点的第一分量和与所述物理特性的大小有关的第二分量;材料成形装置,被配置为在工作空间中创建物理模型,所述工作空间具有与所选择的区域的所选区域相关的区域 所述材料成形设备包括响应于在工作空间中表示x,y和z坐标的第二电信号的装置,用于引导物理模型的形成; 以及连接到换能器装置和材料成型装置的控制装置,用于将来自换能器的第一电信号转换为第二电信号,并将电信号提供给材料成形装置,所述控制装置根据 第一和第二选择的比例因子。

    Process of and apparatus for cold-cathode electron-beam generation for
sterilization of surfaces and similar applications
    50.
    发明授权
    Process of and apparatus for cold-cathode electron-beam generation for sterilization of surfaces and similar applications 失效
    冷阴极电子束产生的方法和设备用于表面和类似应用的灭菌

    公开(公告)号:US4305000A

    公开(公告)日:1981-12-08

    申请号:US957483

    申请日:1978-11-03

    CPC classification number: H01J37/00 A61L2/08

    Abstract: This disclosure is concerned with a process of and apparatus for producing relatively low energy electron beams through pulsed cold-cathode beam generation in a mode of operation involving an important intermediate region of a substantially linear depth-dose profile characteristic that reduces the sensitivity to possible voltage variations, and with improved triggering structures that significantly improve reliability and minimize erratic pulse generation and missing pulses, thus particularly adapting the process and apparatus for such stringent applications as production-line sterilization of surfaces, materials or workpieces passed by the apparatus.

    Abstract translation: 本公开涉及通过脉冲冷阴极束产生的相对低能量电子束的生产方法和装置,该方法包括基本上线性深度剂量分布特征的重要中间区域,该特征降低了对可能的电压的敏感性 变化和改进的触发结构,显着提高了可靠性并最大程度地减少了不规则的脉冲产生和缺失的脉冲,从而特别适用于用于由设备通过的表面,材料或工件的生产线灭菌等严格应用的工艺和设备。

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