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    Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor
    41.
    发明申请
    Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor 失效
    电感耦合射频等离子体反应器及其等离子体室结构

    公开(公告)号：US20020020499A1

    公开(公告)日：2002-02-21

    申请号：US09970121

    申请日：2001-10-02

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

    IPC: C23F001/02

    CPC classification number: H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

    Abstract: A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

    Abstract translation: 用于RF等离子体反应器的等离子体室外壳结构。 等离子体腔室结构是倒置杯形构造的单壁电介质外壳结构，并且具有延伸到中心位置的气体入口的具有基本平坦的圆锥形构造的内表面的天花板。 等离子体室外壳结构具有侧壁，当定位在反应器基座上时，具有大体横向于基座的下部圆柱形部分，以及在下部圆柱形部分和天花板之间的过渡部分。 过渡部分从下圆柱形部分向内延伸并且包括曲率半径。 所述结构适于覆盖所述基座以包括所述RF等离子体反应器并且限定所述基座上的等离子体处理体积。 该结构由硅，碳化硅，石英和/或氧化铝的电介质材料形成，其能够从相邻天线传输感应电力。

    LOW CEILING TEMPERATURE PROCESS FOR A PLASMA REACTOR WITH HEATED SOURCE OF A POLYMER-HARDENING PRECURSOR MATERIAL
    42.
    发明申请
    LOW CEILING TEMPERATURE PROCESS FOR A PLASMA REACTOR WITH HEATED SOURCE OF A POLYMER-HARDENING PRECURSOR MATERIAL 无效
    用于聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程

    公开(公告)号：US20010054601A1

    公开(公告)日：2001-12-27

    申请号：US09008151

    申请日：1998-01-16

    Inventor： JIAN DING

    IPC: B44C001/22

    CPC classification number: H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

    Abstract: A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.

    Abstract translation: 一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体 包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料 包括氟清除剂前体材料。 优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。 在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。 在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

    Process for fabricating a metal silicide layer of a semiconductor and apparatus
    43.
    发明授权
    Process for fabricating a metal silicide layer of a semiconductor and apparatus 失效
    用于制造半导体的金属硅化物层的方法和装置

    公开(公告)号：US06271549B1

    公开(公告)日：2001-08-07

    申请号：US09469760

    申请日：1999-12-22

    Applicant: Nobuaki Hamanaka

    Inventor： Nobuaki Hamanaka

    IPC: H01L2358

    CPC classification number: H01J37/32871 ,  C23C14/564 ,  H01L21/28518 ,  H01L21/2855 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The magnetron sputtering apparatus of this invention has planar bodies 13 made of a material capable of capturing oxygen and water, heaters 14 to heat the planar bodies 13, an oxygen monitor 15 and others in a load lock chamber 11 and separate chamber 12. After a metal film has been formed on a silicon substrate 18 in a film forming chamber, the substrate is subjected to a heating treatment such that a metal silicide layer is formed. Before the silicon substrate being still hot is transferred to the load lock and separate chambers 11 and 12, oxygen and water in the same chambers have been removed. Through this arrangement it is possible to prevent oxidation of the metal silicide layer, and to form a high melting point silicide layer having a low resistance.

    Abstract translation: 本发明的磁控溅射装置具有由能够捕获氧和水的材料制成的平面体13，加热器14以加热平面体13，氧监测器15等在负载锁定室11和分隔室12中。在 在成膜室的硅基板18上形成金属膜，对基板进行加热处理，形成金属硅化物层。 在将硅衬底仍然热转移到负载锁和分离室11和12之前，同一腔室中的氧气和水已被去除。 通过这种布置，可以防止金属硅化物层的氧化，并形成具有低电阻的高熔点硅化物层。

    Process for etching oxides in an electromagnetically coupled planar plasma apparatus
    44.
    发明授权
    Process for etching oxides in an electromagnetically coupled planar plasma apparatus 失效
    在电磁耦合平面等离子体装置中蚀刻氧化物的方法

    公开(公告)号：US6090303A

    公开(公告)日：2000-07-18

    申请号：US761045

    申请日：1996-12-05

    Applicant: Kenneth S. Collins ,  Jeffrey Marks

    Inventor： Kenneth S. Collins ,  Jeffrey Marks

    IPC: H01L21/00 ,  H05H1/00

    CPC classification number: H01J37/32871

    Abstract: In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.

    Abstract translation: 在一种用于制造电磁耦合平面等离子体的装置中，包括在其壁中具有介电屏蔽的腔室和在所述腔室外面的平面线圈，并且与耦合到射频源的所述窗口相邻，其中安装有用于氟的清除剂的改进 进入或添加到所述室中。 当用氟烃气体的等离子体蚀刻氧化硅时，氟清除剂减少游离氟自由基，从而提高蚀刻的选择性和各向异性，并且在减少颗粒形成的同时提高蚀刻速率。

    High selectivity etch using an external plasma discharge
    45.
    发明授权
    High selectivity etch using an external plasma discharge 失效

    公开(公告)号：US6074514A

    公开(公告)日：2000-06-13

    申请号：US20959

    申请日：1998-02-09

    Applicant: Claes Bjorkman ,  Hongching Shan ,  Michael Welch

    Inventor： Claes Bjorkman ,  Hongching Shan ,  Michael Welch

    IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23F1/02

    CPC classification number: H01J37/32871

    Abstract: An apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gas entering a primary processing chamber of a plasma reactor. There is at least one scavenging chamber, each of which is connected at an inlet thereof to an etchant gas source and at an outlet thereof to a gas distribution device of the primary processing chamber. Each scavenging chamber has a radiation applicator that irradiates the interior of the scavenging chamber and creates a plasma therein from etchant gas flowing through the chamber from the etchant gas source to the gas distribution apparatus of the primary processing chamber. The applicator uses either an inductive discharge, capacitive discharge, direct current (DC) discharge or microwave discharge to irradiate the interior of the scavenging chamber and ignite the plasma. An etchant species scavenging source is also disposed within the scavenging chamber. This source provides scavenging material that interacts with the plasma to scavenge etchant species created by the dissociation of the etchant gas in the plasma and form etch by-products comprised of substances from both the etchant species and the scavenging source. The scavenging chambers can be employed, as is or in a modified form, as excitation chambers to excite gases at optimal conditions and feed the modified gases into the primary chamber. The scavenging chamber is modified by removing its scavenging source if this source would adversely interact with the gas being excited.

    Plasma processing method and plasma generator
    47.
    发明授权
    Plasma processing method and plasma generator 失效
    等离子体处理方法和等离子体发生器

    公开(公告)号：US5637180A

    公开(公告)日：1997-06-10

    申请号：US533095

    申请日：1995-09-25

    Applicant: Dharam P. Gosain ,  Jonathan Westwater ,  Setsuo Usui

    Inventor： Dharam P. Gosain ,  Jonathan Westwater ,  Setsuo Usui

    IPC: C23C14/54 ,  C23C16/452 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C03C25/06

    CPC classification number: H01J37/32871 ,  C23C16/452

    Abstract: A plasma-processing method used in processes for manufacturing semiconductor devices. During plasma processing, ultraviolet radiation is emitted from a region where a plasma is created. An ultraviolet radiation-blocking means blocks the ultraviolet radiation from impinging on the sample surface to protect it. The blocking means passes particles forming a plasma onto the sample surface. The particles passed through the ultraviolet radiation-blocking plates are implanted into the sample. Alternatively, the processed surface of the sample is etched, or a film is deposited on the processed surface of the sample.

    Abstract translation: 一种等离子体处理方法，用于制造半导体器件的工艺。 在等离子体处理期间，从产生等离子体的区域发射紫外线。 紫外线辐射阻挡装置阻止紫外线照射在样品表面上以保护其。 阻挡装置将形成等离子体的颗粒通过到样品表面上。 将穿过紫外线辐射阻挡板的颗粒植入样品中。 或者，对被处理的样品表面进行蚀刻，或者将膜沉积在样品的经处理表面上。

    Method of reducing particulates in a plasma tool through steady state flows
    50.
    发明授权
    Method of reducing particulates in a plasma tool through steady state flows 失效
    通过稳态流减少等离子体工具中的微粒的方法

    公开(公告)号：US5543184A

    公开(公告)日：1996-08-06

    申请号：US450120

    申请日：1995-05-25

    Applicant: Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  Thomas Wicker

    Inventor： Michael S. Barnes ,  Dennis K. Coultas ,  John C. Forster ,  John H. Keller ,  Thomas Wicker

    IPC: C23C16/44 ,  H01J37/32 ,  H05H1/02

    CPC classification number: H01J37/32871 ,  C23C16/4401

    Abstract: A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.

    Abstract translation: 用于使用稳态流减少等离子体工具中的微粒的方法和装置包括可操作地耦合到壳体的装置，其中待处理对象被定位在其中，用于产生邻近物体朝向泵送孔径的等离子体流。 泵送机构泵送邻近物体的介质。 介质支持等离子体，并将离子束中的等离子体中的微粒夹带在泵送孔径之外。 由形成环尖的多极磁体产生的磁场优选用于产生径向远离待处理物体的等离子体流。 在第二实施例中，提供形成线尖端的磁体阵列以产生等离子体将流过的开口。

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