Abstract:
Provided are connection structures for a microelectronic device and methods for forming the structure. A substrate is included having opposing surfaces and a plurality of holes extending through the surfaces. Also included is a plurality of electrically conductive posts. Each post extends from a base to a tip located within a corresponding hole of the substrate. An additional substrate may be provided such that the base of each post is located on a surface thereof. Additional electrically conductive posts may be provided having tips in corresponding holes of the additional substrate. Optionally, a dielectric material may be placed between the substrate and the posts.
Abstract:
An embedded capacitor structure in a circuit board and a method for fabricating the same are proposed. The circuit board is formed with a first circuit layer on at least one surface thereof, wherein the first circuit layer has at least one first electrode plate for the capacitor structure. Then, a dielectric layer is formed on the first circuit layer and made flush with the first circuit layer. The dielectric layer has a relatively low dielectric constant and good fluidity to effectively fill the spaces between patterned traces of the first circuit later. A capacitive material is deposited on the dielectric layer and the first circuit layer. Finally, a second circuit layer is formed on the capacitive material and has at least one second electrode plate corresponding to the first electrode plate, together with the capacitive material disposed in-between, to form the capacitor structure.
Abstract:
Provided is a method for manufacturing a printed wiring board, which can enhance the peel strength between an insulating layer and a conductive pattern by a two-step process, that is, a semi-hardening and full-hardening of the insulating layer. In the method for manufacturing the printed wiring board having one or more layers of a conductive pattern and an insulating pattern, an insulating pattern is formed on an insulating substrate, and at least one of the insulating substrate and the insulating pattern is semi-hardened. A conductive pattern is formed on the insulating substrate and/or the insulating pattern, thereby providing a stack structure. Then, a thermal treatment is performed on the stack structure to fully harden the semi-hardened insulating substrate and/or insulating pattern, and the conductive pattern is fired.
Abstract:
A method of manufacturing a substrate structure includes the steps of: (1) providing a metal substrate having a metal portion; (2) chemically etching a plurality of trenches in the metal substrate; (3) applying a polymer composite material into the trenches to form a substrate having a polymer composite portion abutted to the metal portion; (4) polishing a surface of the substrate to make a height of the polymer composite portion equal to that of the metal portion; (5) forming a covering material on the surface of the substrate; and (6) cutting the substrate via the polymer composite portion for decreasing cutting bur produced on the metal portion. Furthermore, the method is provided for combining the metal substrate and the polymer composite material, thereby to increase cutting precision and strength of the substrate structure.
Abstract:
In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 includes columnar interconnects which may be fabricated by etching a conductive member such as copper foil, for example. In one application, the pitch or center to center spacing of the columnar interconnects may be defined by masking techniques to provide an interconnect pitch suitable for a particular application. In yet another aspect, etching rates may be controlled to provide height to width aspect ratios of the columnar interconnects which are suitable for various applications.
Abstract:
A semiconductor substrate structure includes a substrate having a trench formed thereon, a polymer composite material supplied into the trench and an electroplate conductive layer formed on the substrate. Further, a semiconductor substrate processing method includes the steps of: providing a substrate forming a trench thereon, supplying a polymer composite material into the trench, polishing a surface of the substrate and forming a covering material on the surface of the substrate. Therefore, the method is provided for combining the polymer composite material into the substrate, thereby to raise cutting precision and strength of the semiconductor substrate structure.
Abstract:
A release layer paste used for producing a multilayer electronic device, used in combination with an electrode layer paste including terpineol, dehydroterpineol, terpineol acetate, or dehydroterpineol acetate and including a ceramic powder, organic vehicle, plasticizer, and dispersion agent, the organic vehicle containing a binder having polyvinyl acetal as its main ingredient, a ratio (P/B) of the ceramic powder and the binder and plasticizer being controlled to 1.33 to 5.56 (however, excluding 5.56).
Abstract:
A method for providing a layer by ink jetting, comprising: (a) discharging a first liquid insulating material of a first concentration on a surface of a first level so that a side of a first conductive layer placed on the surface is covered by the first insulating material; (b) providing a first insulating layer facing the first conductive layer by one of activating and drying the first insulating material that has been discharged; (c) discharging a second liquid insulating material of a second concentration on the first conductive layer and the first insulating layer, the second concentration being higher than the first concentration; and (d) providing a second insulating layer covering the first conductive layer and the first insulating layer by one of activating and drying the second insulating material that has been discharged.
Abstract:
A method of manufacturing a wiring board includes steps of: providing a substrate; forming a first wiring layer on the substrate by photolithography; forming a first insulating layer by ink jetting so as to cover a part of the first wiring layer and expose an exposed section of the first wiring layer; and forming a second wiring layer by ink jetting partly over the first wiring layer, with the first insulating layer being between the part of the first wiring layer and a part of the second wiring layer. A wider variety of conductive material and insulating material can be used for forming the wiring layers and the insulating layers on the substrate by ink jetting, while the wiring board has a first wiring layer having high density.
Abstract:
A packaging substrate without plating bar and a method of forming the same is provided. A substrate is firstly provided with circuit patterns formed thereon. Then, solder masks are formed to define connecting points on the circuit patterns. Afterward, the openings of the solder mask on a bottom surface of the substrate are filled with solder material. Thereafter, a seed layer is formed on the bottom surface of the solder mask and the solder material, and then a passivation layer is formed on a surface of the seed layer. Finally, a plating process is carried out by using the seed layer to input cathode electric level to form metal pads on the defined connecting points on the upper surface of the substrate.