公开(公告)号：US20030234372A1

公开(公告)日：2003-12-25

申请号：US10436974

申请日：2003-05-14

Inventor： Sang-Kuk Park

IPC: H01J037/30 ,  H01J037/08

CPC classification number: H01J37/08 ,  H01J2237/31701

Abstract: An ion source for ionizing reactant gases in an ion implantation process for manufacturing semiconductor devices includes an arc chamber into which gas is supplied through a gas line, and a spray nozzle that is connected with the gas line. The spray nozzle has a plurality f minute spray openings that spray the gas flowing through the gas line uniformly into the arc chamber at a high velocity.

Abstract translation: 在用于制造半导体器件的离子注入工艺中用于电离反应气体的离子源包括通过气体管线供应气体的电弧室和与气体管线连接的喷嘴。 喷嘴具有多个f分钟的喷射开口，其以高速度将流过气体管线的气体均匀地喷射到电弧室中。

公开(公告)号：US20030183781A1

公开(公告)日：2003-10-02

申请号：US10105258

申请日：2002-03-26

Applicant: International Busines Machiness Corporation

Inventor： Rudolf M. Tromp

IPC: G21K005/10 ,  H01J037/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/093 ,  H01J37/3174 ,  H01J2237/31789

Abstract: A method (and structure) for controlling a beam used to generate a pattern on a target surface includes generating a beam of charged particles and directing the beam to a mask surface and causing the beam to be either absorbed by or reflected from the mask surface, thereby either precluding or allowing the beam to strike the target surface, based on a reflection characteristic of the mask surface.

公开(公告)号：US20030111617A1

公开(公告)日：2003-06-19

申请号：US10023516

申请日：2001-12-17

Inventor： Michel Pharand ,  Allan D. Weed

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01L21/68764 ,  G21K5/08 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/31701

Abstract: The invention provides a wafer pad assembly and actuation system for use in an ion implanter, preferably a batch-type ion implanter. The wafer pad assembly includes a rotatable wafer support pad having an upper surface for mounting the wafer, and a lower surface rotationally mounted to a housing of the wafer pad assembly. The lower surface of the wafer support pad further comprises a flange connected to a rotatable shaft. The shaft is connected to an actuator for selectively indexing the shaft so that the wafer support pad is rotationally indexed about its geometric center. The lower surface of the wafer support pad is also connected to a frame having an outer curved surface rotatably mounted within a mating bearing surface of a housing. The curved frame is connected to a plurality of linkages for moving the wafer support pad within the curved frame so that the wafer is pivotable or tiltable about its geometric center.

Abstract translation: 本发明提供了一种用于离子注入机，优选分批式离子注入机的晶圆垫组件和致动系统。 晶片垫组件包括可旋转晶片支撑垫，其具有用于安装晶片的上表面，以及可旋转地安装到晶片垫组件的壳体的下表面。 晶片支撑垫的下表面还包括连接到可旋转轴的凸缘。 轴连接到致动器以选择性地分度轴，使得晶片支撑垫围绕其几何中心旋转地分度。 晶片支撑垫的下表面还连接到具有可旋转地安装在壳体的配合支承表面内的外曲面的框架。 弯曲框架连接到多个联动装置，用于在晶片框架内移动晶片支撑垫，使得晶片围绕其几何中心可枢转或可倾斜。

公开(公告)号：US20030071223A1

公开(公告)日：2003-04-17

申请号：US10184089

申请日：2002-06-25

Inventor： Frank T. Hartley ,  Steven J. Smith

IPC: H01J037/08 ,  H01J049/16

CPC classification number: G01N27/68 ,  H01J49/168 ,  H01J49/288

Abstract: A field ionizing element formed of a membrane that houses electrodes therein that are located closer to one another than the mean free path of the gas being ionized. The membrane includes a supporting portion, and a non supporting portion where the ions are formed. The membrane may be used as the front end for a number of different applications including a mass spectrometer, a rotating field mass spectrometer, a thruster, an ion mobility element, or an electrochemical device such as a fuel cell.

Abstract translation: 一种场电离元件，其由容纳电极的膜形成，所述电极位于比被离子化的气体的平均自由程更靠近的位置。 膜包括支撑部分和形成离子的非支撑部分。 膜可以用作许多不同应用的前端，包括质谱仪，旋转场质谱仪，推进器，离子迁移元件或诸如燃料电池的电化学装置。

公开(公告)号：US20030001111A1

公开(公告)日：2003-01-02

申请号：US10185553

申请日：2002-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Pyo Kim ,  Mun-Hee Lee

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3171 ,  H01J2237/30411

Abstract: An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.

Abstract translation: 公开了一种输入参数监测装置，其中用于离子注入的输入参数可以在离子注入过程期间存储在数据库中，从而允许用户从远程位置监测操作历史。 一种在半导体制造装置中监测在离子注入过程期间产生的输入参数的方法，包括收集由多个离子注入装置生成的对数数据，按照时间顺序列出数据库中收集的日志数据，并在所述处理过程中基本同时更新数据库 。 可以处理日志数据以启用文本或图形显示。 LAN将通过输入端口连接的本地计算机连接到多个ion-imp设备和远程计算机，从而使远程计算机可以监控操作过程和可能的交互。

公开(公告)号：US20020166980A1

公开(公告)日：2002-11-14

申请号：US10184939

申请日：2002-07-01

Applicant: MATSUSHITA ELECTRONICS CORPORATION

Inventor： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

IPC: H01J037/08

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701 ,  H01L21/26513

Abstract: An impurity introducing apparatus of the present invention includes: a system for introducing an impurity having charges into a target to be processed, the target being a semiconductor substrate or a film formed on the substrate; a system for supplying electrons into the target, the electrons canceling the charges of the impurity; and a system for controlling the maximum energy of the electrons supplied by the electron supply system at a predetermined value or less.

Abstract translation: 本发明的杂质导入装置包括：将具有电荷的杂质引入被处理对象物，所述靶为半导体基板或形成在所述基板上的膜的系统; 用于向目标物质供给电子的系统，电子消除杂质的电荷; 以及用于控制由电子供给系统提供的电子的最大能量以预定值或更小的系统。

公开(公告)号：US20020130277A1

公开(公告)日：2002-09-19

申请号：US09772146

申请日：2001-01-29

Inventor： Alfred Michael Halling

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3171 ,  H01J37/304

Abstract: The invention provides a method and system for determining a pressure compensation factor for use in an ion implanter, which uses one or a small number of test workpieces. The method includes providing a test workpiece in the ion implantation system, wherein the test workpiece has at least one band region, assuming a predicted pressure compensation factor, implanting the at least one band region of the test workpiece with an ion beam using the ion implantation system and the predicted pressure compensation factor while measuring ion beam current and a pressure in the ion implantation system, measuring a sheet resistance associated with the implanted test workpiece, and determining a pressure compensation factor according to the predicted pressure compensation factor, the measured sheet resistance, the measured ion beam current, and the measured pressure.

Abstract translation: 本发明提供一种用于确定使用一个或少量测试工件的离子注入机中使用的压力补偿系数的方法和系统。 该方法包括在离子注入系统中提供测试工件，其中假设预测的压力补偿因子，测试工件具有至少一个带区域，使用离子注入使用离子束注入测试工件的至少一个带区域 系统和预测的压力补偿因子，同时测量离子束电流和离子注入系统中的压力，测量与植入的测试工件相关联的薄层电阻，以及根据预测的压力补偿因子确定压力补偿因子，测量的薄层电阻 ，测量的离子束电流和测量的压力。

公开(公告)号：US20020125442A1

公开(公告)日：2002-09-12

申请号：US09364840

申请日：1999-07-30

Inventor： TIMOTHY A. BRUNNER

IPC: A61N005/00 ,  H01J037/08 ,  G21G005/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31794

Abstract: A stencil-scattering mask for e-beam lithography includes four complementary sub-field reticles, each of which is exposed with one fourth of the total dose. nullDoughnutnull stencil shapes have four different patterns of struts, so that an area that is blocked by a strut in one shape is exposed in three other shapes.

Abstract translation: 用于电子束光刻的模板散射掩模包括四个互补子场标线，其中每个掩模版以总剂量的四分之一暴露。 “甜甜圈”模板形状具有四种不同的支柱图案，使得由一个形状的支柱阻挡的区域以三种其他形状暴露。

公开(公告)号：US20020117637A1

公开(公告)日：2002-08-29

申请号：US09796194

申请日：2001-02-28

Applicant: International Business machines Corporation

Inventor： Gary A. Donaldson ,  Donald W. D. Rakowski ,  Nick G. Selva

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J27/04 ,  H01J37/08 ,  H01J2237/31701

Abstract: An ion generator chamber, for an implantation apparatus, having its interior walls surfaces knurled or roughened so that any of the materials used in the chamber cannot deposit onto the interior wall surfaces in a size sufficiently large enough to adversely affect the operation of the chamber, if the deposits peel off the interior walls of the chamber. By limiting the size of any deposits on interior chamber walls, the invention extends the average life of the filaments used in the chamber as well as extending the average time between any necessary cleaning of the inner chamber walls thereby extending the operating life of the chamber.

Abstract translation: 一种用于植入装置的离子发生器室，其内壁表面滚花或粗糙化，使得在室中使用的任何材料不能以足够大的尺寸沉积到内壁表面上，从而不利地影响室的操作， 如果沉积物从室的内壁剥离。 通过限制内部室壁上的任何沉积物的尺寸，本发明延长了室中使用的长丝的平均寿命，并且延长了在内室壁的任何必要的清洁之间的平均时间，从而延长了室的使用寿命。

公开(公告)号：US20020104971A1

公开(公告)日：2002-08-08

申请号：US09918730

申请日：2001-07-31

Inventor： Yushi Kaneda

IPC: G21K005/10 ,  H01J037/08

CPC classification number: G02F1/37 ,  G02F2001/354 ,  G02F2001/3542

Abstract: A deep-ultraviolet violet laser beam which is a harmonic and is generated inside a nonlinear optical element (101) is emitted outside the nonlinear optical element (101), being spaced from a green laser beam, which is a fundamental wave. The green laser beam emitted outside the nonlinear optical element (101) is reflected by an input-coupling mirror (102) and applied again into the nonlinear optical element (101) in order to form a closed optical path for the fundamental wave. Also, the deep-ultraviolet laser beam emitted outside the nonlinear optical element (101) is reflected by a reflecting mirror (28) other than the input-coupling mirror (102) in order to emit the deep-ultraviolet laser beam from a deep-ultraviolet laser beam-generating section (20).

Abstract translation: 作为谐波并在非线性光学元件（101）内部产生的深紫外线紫外激光束被发射到非线性光学元件（101）外部，与作为基波的绿色激光束间隔开。 发射在非线性光学元件（101）外部的绿色激光束被输入耦合镜（102）反射并再次施加到非线性光学元件（101）中，以形成用于基波的封闭光路。 此外，发射在非线性光学元件（101）外部的深紫外激光束被除了输入耦合镜（102）之外的反射镜（28）反射，以便从深 - 紫外线激光束产生部（20）。