公开(公告)号：US11450504B2

公开(公告)日：2022-09-20

申请号：US17023879

申请日：2020-09-17

Applicant: APPLIED Materials, Inc.

Inventor： Bon-Woong Koo ,  Ajdin Sarajlic ,  Ronald Johnson ,  Nunzio V. Carbone ,  Peter Ewing ,  Mervyn Deegan

IPC: H01J37/08 ,  H01J37/317

Abstract: A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germanium ion beam of sufficient beam current without the use of a halogen. Additionally, the use of germane as a second gas has been shown to improve the beam current of an argon ion beam.

公开(公告)号：US20220285122A1

公开(公告)日：2022-09-08

申请号：US17195509

申请日：2021-03-08

Applicant: Varian Medical Systems, Inc.

Inventor： Amir Shojaei ,  Philip Adamson ,  Flavio Poehlmann-Martins

IPC: H01J37/08 ,  H01J37/16

Abstract: An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

公开(公告)号：US11380512B2

公开(公告)日：2022-07-05

申请号：US16818675

申请日：2020-03-13

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Syuta Ochi

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/063 ,  H01J37/32

Abstract: An ion generator includes: an arc chamber which defines a plasma generation space; a cathode which emits thermoelectrons toward the plasma generation space; and a repeller which faces the cathode with the plasma generation space interposed therebetween. The arc chamber includes a box-shaped main body on which a front side is open, and a slit member which is mounted to the front side of the main body and provided with a front slit for extracting ions. An inner surface of the main body which is exposed to the plasma generation space is made of a refractory metal material, and an inner surface of the slit member which is exposed to the plasma generation space is made of graphite.

公开(公告)号：US20220157555A1

公开(公告)日：2022-05-19

申请号：US17528268

申请日：2021-11-17

Applicant: Advanced Energy Industries, Inc.

Inventor： Daniel Carter ,  Victor Brouk ,  Daniel J. Hoffman

IPC: H01J37/08 ,  G01N27/06 ,  H01J37/32

Abstract: Systems, methods and apparatus for applying a periodic voltage function are disclosed. An exemplary method comprises applying a modified periodic voltage function to an electrical node and monitoring the modified periodic voltage function over multiple cycles to monitor a relationship d ⁢ V 0 dt - I c C 1 = D to represent a status of a plasma process or the plasma processing chamber, where Ic represents a controllable ion compensation current, D is a unitless value, d ⁢ V 0 dT represents a portion of the modified periodic voltage function that includes a negative voltage ramp, and C1 is an effective capacitance including a capacitance of a substrate support.

公开(公告)号：US20220157554A1

公开(公告)日：2022-05-19

申请号：US17454998

申请日：2021-11-15

Applicant: KOREA BASIC SCIENCE INSTITUTE

Inventor： Sang Ju LEE ,  Myoung Choul CHOI ,  Chang Min CHOI ,  Aram HONG ,  Ji Young BAEK

IPC: H01J37/08

Abstract: A mixed gas cluster ion beam generator may include a nozzle chamber to contain a first mixed gas which is a mixed gas that is a mix of a first gas and a second gas, a cluster nozzle to spray gas received from the nozzle chamber in a cluster form, an ionizer to ionize a gas cluster sprayed by the cluster nozzle, and an ion accelerator to emit an ion beam to the outside by accelerating the gas cluster ionized by the ionizer by generating a potential difference to the ionized gas cluster.

公开(公告)号：US11335531B2

公开(公告)日：2022-05-17

申请号：US16789591

申请日：2020-02-13

Applicant: Applied Materials, Inc.

Inventor： Joseph C. Olson ,  Morgan Evans ,  Thomas Soldi ,  Rutger Meyer Timmerman Thijssen ,  Maurice Emerson Peploski

IPC: H01J37/08 ,  H01J29/07 ,  H01J37/20 ,  H01J37/305

Abstract: Methods of producing grating materials with variable height are provided. In one example, a method may include providing a grating material atop a substrate, and positioning a shadow mask between the grating material and an ion source, wherein the shadow mask is separated from the grating material by a distance. The method may further include etching the grating material using an ion beam passing through a set of openings of the shadow mask, wherein a first depth of a first portion of the grating material is different than a second depth of a second portion of the grating material.

公开(公告)号：US20220148843A1

公开(公告)日：2022-05-12

申请号：US17092250

申请日：2020-11-07

Applicant: Applied Materials, Inc.

Inventor： Costel Biloiu ,  Jay R. Wallace ,  Kevin M. Daniels ,  Frank Sinclair ,  Christopher Campbell

IPC: H01J37/08 ,  H01J37/32

Abstract: An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave shape. As such, an extraction aperture may be arranged along a first surface of the central portion, where the first surface is oriented at a high angle with respect to the first side. The extraction plate may further include a patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap.

公开(公告)号：US11302515B2

公开(公告)日：2022-04-12

申请号：US16364654

申请日：2019-03-26

Applicant: Comadur S.A.

Inventor： Alexis Boulmay ,  Pierry Vuille ,  Julien Meier ,  Pierpasquale Tortora

IPC: H01J37/08 ,  H01J37/305 ,  G04B19/06 ,  G04B29/02 ,  G04B37/00 ,  G04B39/00

Abstract: A method for structuring a decorative or technical pattern in the thickness of an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material, wherein the object is made of an at least partially transparent material including a top surface and a bottom surface which extends away from the top surface. The top or bottom surfaces is provided with a mask defining an opening whose outline corresponds to the profile of the pattern to be structured, the mask covering the top or bottom surface at the positions which are not to be structured. The pattern is structured with a mono- or multicharged ion beam through the opening of the mask, wherein the mechanical properties of the mask are sufficient to prevent the ions of the ion beam from etching the top or bottom surface at the positions where this top or bottom surface is covered by the mask.

公开(公告)号：US11264212B1

公开(公告)日：2022-03-01

申请号：US17037025

申请日：2020-09-29

Applicant: Tokyo Electron Limited

Inventor： Zhiying Chen ,  Joel Blakeney ,  Megan Carruth ,  Peter Ventzek ,  Alok Ranjan

IPC: H01J49/36 ,  H01J37/32 ,  H01J37/08

Abstract: A measurement system for a plasma processing system includes a detector and an ion current meter coupled to the ion current collector and configured to provide a signal based on the measurements from the ion current collector. The detector includes an insulating substrate including a cavity, an ion angle selection grid configured to be exposed to a bulk plasma disposed in an upper portion of the cavity, and an ion current collector disposed within the cavity at an opposite side of the cavity below the ion angle selection grid. The ion angle selection grid includes an ion angle selection substrate and a plurality of through openings extending through the ion angle selection substrate, where each of the plurality of through openings has a depth into the ion angle selection substrate and a width orthogonal to the depth, where a ratio of the depth to the width is greater than or equal to 40.

公开(公告)号：US11244802B2

公开(公告)日：2022-02-08

申请号：US16961759

申请日：2018-02-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hitoshi Kamoshida ,  Hisayuki Takasu ,  Atsushi Kamino ,  Toru Iwaya

IPC: H01J37/08 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J37/305

Abstract: By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.