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公开(公告)号：US12117734B2
公开(公告)日：2024-10-15
申请号：US17638975
申请日：2020-07-31
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Alexander Prasetya Konijnenberg
CPC classification number: G03F7/70633 , G01N21/4738
Abstract: Disclosed is a method of measuring a structure, and associated metrology device and computer program. The method comprises obtaining an amplitude profile of scattered radiation relating to a measurement of a first structure on a first substrate and obtaining a reference phase profile relating to a reference measurement of at least one reference structure on a reference substrate. The at least one reference structure is not the same structure as said first structure but is nominally identical in terms of at least a plurality of key parameters. The method further comprises determining a complex-valued field to describe the first structure from the amplitude profile and reference phase profile.
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公开(公告)号：US20240339295A1
公开(公告)日：2024-10-10
申请号：US18744367
申请日：2024-06-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Tzu-Chao CHEN , Te-Sheng WANG
IPC: H01J37/317 , G03F9/00 , H01J37/244 , H01J37/26 , H01J37/28
CPC classification number: H01J37/3177 , G03F9/7046 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/24578 , H01J2237/24592 , H01J2237/2817
Abstract: Methods are disclosed for generating a sample map and processing a sample. In one arrangement, a method comprises measuring a position of a first mark in each of a plurality of field regions on sample. A first model is fitted to the measured positions of the first marks. The fitted first model represents positions of the field regions. The method comprises measuring positions of a plurality of second marks in one field region or in each of a plurality of field regions. A second model is fitted to the measured positions of the second marks. The fitted second model represents a shape of each field region. A sample map is output using the fitted first and second models.
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公开(公告)号：US20240331115A1
公开(公告)日：2024-10-03
申请号：US18577678
申请日：2022-06-02
Applicant: ASML Netherlands B.V.
Inventor： Haoyi LIANG , Zhichao CHEN , Lingling PU , Fang-Cheng CHANG , Liangjiang YU , Zhe WANG
CPC classification number: G06T5/80 , G06T7/001 , G06T7/337 , G06T2207/10061 , G06T2207/20081 , G06T2207/30148
Abstract: An improved systems and methods for correcting distortion of an inspection image are disclosed. An improved method for correcting distortion of an inspection image comprises acquiring an inspection image, aligning a plurality of patches of the inspection image based on a reference image corresponding to the inspection image, evaluating, by a machine learning model, alignments between each patch of the plurality of patches and a corresponding patch of the reference image, determining local alignment results for the plurality of patches of the inspection image based on a reference image corresponding to the inspection image, determining an alignment model based on the local alignment results, and correcting a distortion of the inspection image based on the alignment model.
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公开(公告)号：US20240319581A1
公开(公告)日：2024-09-26
申请号：US18579176
申请日：2022-07-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Duan-Fu Stephen HSU , Jialei TANG , Dezheng SUN
CPC classification number: G03F1/36 , G03F7/70508 , G03F7/706 , G03F7/70683 , G03F7/706831 , G03F7/706837
Abstract: Generating a design (e.g., a metrology mark or a device pattern to be printed on a substrate) that is optimized for aberration sensitivity related to an optical system of a lithography system. A metrology mark (e.g., a transmission image sensor (TIS) mark) is optimized for a given device pattern by matching the aberration sensitivity of the metrology mark with the aberration sensitivity of the device pattern. A cost function that includes the aberration sensitivity difference between the metrology mark and the device pattern is evaluated based on an imaging characteristic response (e.g., a critical dimension (CD) response to focus) obtained from a simulation model that simulates lithography. The cost function is evaluated by modifying the metrology mark until the cost function is minimized and an optimized metrology mark is output when the cost function is minimized.
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公开(公告)号：US20240310742A1
公开(公告)日：2024-09-19
申请号：US18260878
申请日：2021-12-15
Applicant: ASML Netherlands B.V.
Inventor： Vladimir KVON , Andrei Mikhailovich YAKUNIN , Marcus Adrianus VAN DE KERKHOF , Dmitry Igorevich ASTAKHOV
IPC: G03F7/00
CPC classification number: G03F7/70916 , G03F7/70716 , G03F7/70033
Abstract: A contamination reduction system for reducing contamination of a patterning system in a plasma environment, comprising: a support arranged to hold a patterning system in a radiation beam; a shutter configured to shield a portion of the radiation beam from the patterning system; and an electrode positioned between the shutter and the support, the electrode connected to a voltage source and configured to generate an electric field between the electrode and the patterning system held by the support.
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Patent Agency Ranking
公开(公告)号：US12080513B2
公开(公告)日：2024-09-03
申请号：US17633176
申请日：2020-08-08
Applicant: ASML Netherlands B.V.
Inventor： Wei Fang , Lingling Pu , Bo Wang , Zhonghua Dong , Yongxin Wang
IPC: H01J37/22 , G01N23/2251 , G06T5/50 , G06T5/77 , G06T5/80 , H01J37/24 , H01J37/244 , H01J37/28
CPC classification number: H01J37/222 , G01N23/2251 , G06T5/50 , G06T5/77 , G06T5/80 , H01J37/244 , H01J37/28 , G01N2223/07 , G01N2223/401 , G01N2223/418 , G01N2223/507 , G06T2207/10061 , G06T2207/20081 , H01J2237/2448 , H01J2237/2806 , H01J2237/2809 , H01J2237/2817
Abstract: An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.
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公开(公告)号：US12078938B2
公开(公告)日：2024-09-03
申请号：US17438314
申请日：2020-02-10
Applicant: ASML Netherlands B.V.
IPC: G03F7/00
CPC classification number: G03F7/706 , G03F7/70504 , G03F7/70891
Abstract: A method of predicting thermally induced aberrations of a projection system for projecting a radiation beam, the method comprising: calculating a change in temperature of the projection system from a power of the radiation beam output from the projection system using a dynamic linear function; and calculating the thermally induced aberrations from the calculated change in temperature using a static non-linear function.
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公开(公告)号：US12078934B2
公开(公告)日：2024-09-03
申请号：US17277027
申请日：2019-08-12
Applicant: ASML Netherlands B.V.
Inventor： Robert Jay Rafac , Igor Vladimirovich Fomenkov
CPC classification number: G03F7/70133 , G03F7/70025 , G03F7/70033 , G03F7/70041 , G03F7/70558 , H05G2/008
Abstract: Disclosed is a system and method for generating EUV radiation in which a laser is used in a multistage process to illuminate without altering a target material and then irradiate the target material to alter a target material with the illumination stage being used to determine the timing for firing during the irradiation stage or stages.
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公开(公告)号：US20240288389A1
公开(公告)日：2024-08-29
申请号：US18660165
申请日：2024-05-09
Applicant: ASML NETHERLANDS B.V.
IPC: G01N23/2202 , B08B5/00 , B08B7/00 , G01N23/2251
CPC classification number: G01N23/2202 , B08B5/00 , B08B7/0035 , G01N23/2251 , G01N2223/6116 , G01N2223/646
Abstract: The embodiments of the present disclosure provide a charged particle assessment system for projecting a beam of charged particles towards a sample. The system comprises a sample holder configured to hold a sample; a charged particle optical system configured to project a beam of charged particles from a charged particle source downbeam towards the sample and comprising a cleaning target; and a cleaning device. The cleaning device is configured to supply cleaning medium in a cleaning flow towards the cleaning target incident on the cleaning target so that the cleaning flow approaches the cleaning target from downbeam of the cleaning target, and to stimulate the cleaning medium at or near the cleaning target such that the cleaning medium cleans at least a portion of the surface of the cleaning target.
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公开(公告)号：US20240280907A1
公开(公告)日：2024-08-22
申请号：US18567053
申请日：2022-04-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Hasret ERCISLI , Alina-Ionela DOBAN , Norbertus Josephus Martinus VAN DEN NIEUWELAAR , Jean-Philippe Xavier VAN DAMME , Frederik Eduard DE JONG
CPC classification number: G03F7/2002 , H01L22/20
Abstract: A method for determining thermally-induced deformation of a structure in a lithographic apparatus, the method including: obtaining timing data for a structure in a lithographic apparatus, wherein the timing data includes timing data for the current state of the structure and timing history data that includes timing data for at least one previous state of the structure; and using one or more models to determine thermally-induced deformation data for the structure in dependence on the timing history data and the timing data for the current state of the structure.
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