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公开(公告)号：US20140084811A1
公开(公告)日：2014-03-27
申请号：US14039688
申请日：2013-09-27
Applicant: MELEXIS TECHNOLOGIES NV
Inventor： Michael BENDER , Michael FREY
IPC: H05B33/08
CPC classification number: H05B33/089
Abstract: The present invention relates to an electronic device, the electronic device comprising at least one LED, a driving unit for applying a driving algorithm for driving the LED during normal operation, and a measurement unit for determining a forward voltage of the LED by imposing a test current to the LED, the measurement unit being programmed for determining test current characteristics taking into account said driving algorithm.
Abstract translation: 电子设备技术领域本发明涉及一种电子设备，该电子设备包括至少一个LED，用于在正常操作期间施加用于驱动LED的驱动算法的驱动单元和用于通过施加测试来确定LED的正向电压的测量单元 电流到LED，测量单元被编程用于考虑所述驱动算法来确定测试电流特性。
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公开(公告)号：US20250112640A1
公开(公告)日：2025-04-03
申请号：US18899176
申请日：2024-09-27
Applicant: Melexis Technologies NV
Inventor： Bernard GINETTI
Abstract: An analog to digital converters (ADC) is for converting an input signal into a digital value. In the ADC, a successive approximation register is connected with its output to a first digital to analog converter (DAC), to a second DAC. A switch matrix is configured for capacitively coupling the input signal between the first input and the second input of the comparator or for capacitively coupling an output signal of the first DAC or an output signal of the second DAC or both between the first input and the second input of the comparator. The ADC includes a comparator switch between the first and the second input of the comparator. An output of the comparator is connected to an input of the successive approximation register.
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公开(公告)号：US20250076140A1
公开(公告)日：2025-03-06
申请号：US18791697
申请日：2024-08-01
Applicant: Melexis Technologies NV
Inventor： Ben MAES , Appo VAN DER WIEL
Abstract: A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, comprising a membrane as part of a semiconductor substrate for being deformed due to the external pressure, a first group of neighboring resistors comprising a sensing resistor pair and a compensating resistor pair and a second group of neighboring resistors comprising a sensing resistor pair and a compensating resistor pair, wherein the sensing resistor pairs are located on or adjacent to the membrane edge and wherein the compensating resistor pairs are located at least partially outside the membrane or on a zero stress zone of the membrane, and wherein the resistors of each resistor pair are orthogonal, and wherein the resistors are connected in a Wheatstone bridge configuration.
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公开(公告)号：US12181612B2
公开(公告)日：2024-12-31
申请号：US17203382
申请日：2021-03-16
Applicant: Melexis Technologies NV
Inventor： Hans Van Den Broeck
Abstract: A method for diagnosing an optical sensor includes a photodetector and an integrator. The method comprises exposing the photodetector to incoming light; obtaining an initial integrated signal at an initial frame; at least once executing the steps of changing at least one control parameter of the optical sensor, exposing the photodetector to incoming light, and obtaining one or more subsequent integrated signals at a subsequent frame; obtaining a characteristic of the optical sensor from the obtained integrated signals; comparing the obtained characteristic with a pre-determined characteristic of the optical sensor to diagnose the optical sensor.
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公开(公告)号：US20240297260A1
公开(公告)日：2024-09-05
申请号：US18534074
申请日：2023-12-08
Applicant: Melexis Technologies NV
Inventor： Rachel GLEESON , Luc BUYDENS
IPC: H01L31/0203 , H01L23/26 , H01L31/18
CPC classification number: H01L31/0203 , H01L23/26 , H01L31/18
Abstract: A method of manufacturing a sensor device (100) comprises forming (200) a substrate (102) comprising a sensor element followed by forming (202) a cap layer (104). The cap layer (104) is then bonded (204) to the substrate (102) before the substrate (102) is thinned (206). A via is formed (210) between the sensor element and a back side of the thinned substrate (102). An electrical connection is provided between the sensor element and the back side of the thinned substrate (102). A mask is formed (208) on the cap layer (104) to define an area about a predetermined window region (108) before forming (210) of the via. A portion of the cap layer (104) about the predetermined window region (108) of the cap layer (104) is removed (212) after formation (210) of the via.
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Patent Agency Ranking
公开(公告)号：US11990556B2
公开(公告)日：2024-05-21
申请号：US17314417
申请日：2021-05-07
Applicant: Melexis Technologies NV
Inventor： Volodymyr Seliuchenko
IPC: H01L31/0352 , G01S7/4865 , G01S17/06 , G01S17/894 , H01L27/146
CPC classification number: H01L31/0352 , G01S7/4865 , G01S17/06 , G01S17/894 , H01L27/14643
Abstract: A photonic mixer device for multiplying an impinging optical signal with a reference electrical signal includes: a semiconductor substrate of a first conductivity type; two detector regions of a second conductivity type different from the first conductivity type; two biasing regions of the first conductivity type with a higher dopant concentration than the dopant concentration of the semiconductor substrate, each biasing region positioned near one of the respective detector regions, wherein an electrical field can be formed in the semiconductor substrate by applying a voltage bias between the biasing regions; two bias electrodes, which are isolated from the substrate and the biasing regions, wherein each bias electrode is only locally, partially or completely, covering an outer edge of one of the respective biasing regions.
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公开(公告)号：US11959807B2
公开(公告)日：2024-04-16
申请号：US17512776
申请日：2021-10-28
Applicant: Melexis Technologies NV
Inventor： Jos Rennies , Wouter Reusen , Luc Buydens
IPC: G01J5/10 , H04N5/33 , H04N25/46 , H04N25/702 , G01J5/00
CPC classification number: G01J5/10 , H04N5/33 , H04N25/46 , H04N25/702 , G01J2005/0077 , G01J2005/106
Abstract: A thermal imaging apparatus comprising: a thermal detector device (100) comprising an array of thermal sensing pixels (102) and signal processing circuitry (104) coupled to the detector device (100). The circuitry (104) supports a background identifier (110) and a pixel classifier (112), the background identifier (110) comprising a common intensity identifier (114) and an expected background intensity calculator (116). The background identifier (110) receives pixel measurement data captured by the detector device (100) in respect of pixels of the array (102) and the common intensity identifier (114) identifies a largest number of substantially the same pixel intensity values from the pixel measurement data. The expected background intensity calculator (116) uses the largest number of substantially the same pixel intensity values to generate a model of expected background intensity levels. The pixel classifier (112) uses the model to determine whether an intensity measurement by a pixel (118) of the array (102) corresponds to a background or an object in an image.
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公开(公告)号：US20240031200A1
公开(公告)日：2024-01-25
申请号：US18355759
申请日：2023-07-20
Applicant: Melexis Technologies NV
Inventor： Raik FROST , Thomas FREITAG , Michael FREY , Heiko LEUTERT
IPC: H04L12/40
CPC classification number: H04L12/40078 , H04L12/40013
Abstract: A method for autoconfiguration of a plurality of nodes in a linear network allows extracting the address and position of each node. The method includes applying an identifier field for transmitting to the bus the bit sequence of the identifier of a chosen node. Then for at least for the first node to the last but one node, a field comprising a predetermined bit sequence is applied. The field comprises dominant bits, so a current is transmitted. Then, a further field is applied for transmitting any stored direction bit associated to that node and obtained in any previous iteration. The iteration continues by choosing a node different from a node chosen in any previous cycle, starting the communication, until all nodes are identified.
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公开(公告)号：US20230177656A1
公开(公告)日：2023-06-08
申请号：US17984387
申请日：2022-11-10
Applicant: Melexis Technologies NV
Inventor： Wouter REUSEN , Luc BUYDENS
CPC classification number: G06T5/003 , G06T5/20 , G06T7/168 , G06T2207/10048 , G06T2207/20021 , G06T2207/20056 , G06T2207/20201
Abstract: A method of generating a de-interlacing filter comprises: analysing a pixel array comprising an interlacing pattern of pixels. The interlacing pattern of pixels comprises first and second pluralities of pixels configured to be read during a first measurement subframe and a second measurement subframe, respectively. An n-state representation of the interlacing pattern of pixels is generated and distinguishes between the first plurality of pixels and the second plurality of pixels. The n-state representation of the interlacing pattern is translated to a spatial frequency domain, thereby generating a spatial frequency domain representation of the n-state representation of the interlacing pattern. A DC signal component is then removed from the spatial frequency domain representation of the n-state representation of the interlacing pattern, thereby generating a DC-less spatial frequency domain representation. A kernel filter is then selected and configured to blur before convolving the DC-less spatial frequency representation with the selected kernel filter.
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公开(公告)号：US20230173613A1
公开(公告)日：2023-06-08
申请号：US18062706
申请日：2022-12-07
Applicant: Melexis Technologies NV
Inventor： Appolonius Jacobus VAN DER WIEL
IPC: B23K26/364 , B23K26/40 , B23K26/38
CPC classification number: B23K26/364 , B23K26/40 , B23K26/38 , B23K2103/172
Abstract: A method for creating an electrical contact between semiconductor layers which are separated by an isolating connection layer. The method comprising: providing a layered stack comprising at least a first semiconductor layer, an isolating connection layer, and a second semiconductor layer, wherein the isolating connection layer is between first semiconductor layer and the second semiconductor layer; laser grooving at least one laser groove in the stack through the first semiconductor layer and the isolating connection layer and partly in the second semiconductor layer, leaving a remainder of the second semiconductor layer; cutting the remainder of the second semiconductor layer.
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