公开(公告)号：US11101113B2

公开(公告)日：2021-08-24

申请号：US16595339

申请日：2019-10-07

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01J37/32 ,  H01L21/67

Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US11043375B2

公开(公告)日：2021-06-22

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Eswaranand Venkatasubramanian ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Gonzalo Monroy ,  Lucy Zhiping Chen ,  Yue Guo

IPC: C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  C23C16/44 ,  C23C14/34 ,  C23C14/06 ,  H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/311

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electron emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20200312630A1

公开(公告)日：2020-10-01

申请号：US16828694

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Lawrence Wong ,  Steven Lane ,  Yang Yang ,  Srinivas D. Nemani ,  Praburam Gopalraja

IPC: H01J37/32 ,  H01H1/46

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

公开(公告)号：US10395904B2

公开(公告)日：2019-08-27

申请号：US16198297

申请日：2018-11-21

Applicant: Applied Materials, Inc.

Inventor： Lawrence Wong ,  Kartik Ramaswamy ,  Yang Yang ,  Steven Lane ,  Richard Fovell

IPC: G06F19/00 ,  H01J37/32 ,  H01L21/67 ,  C23F1/00 ,  H01L21/677

Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.

公开(公告)号：US10115566B2

公开(公告)日：2018-10-30

申请号：US15437757

申请日：2017-02-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Steven Lane ,  Tza-Jing Gung ,  Kartik Ramaswamy ,  Travis Koh ,  Joseph F. Aubuchon ,  Yang Yang

IPC: H01J37/32

Abstract: Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a cylindrical body, an inner electromagnetic cosine-theta (cos θ) coil ring including a first plurality of inner coils embedded in the body and configured to generate a magnetic field in a first direction, and an outer electromagnetic cosine-theta (cos θ) coil ring including a second plurality of outer coils embedded in the body and configured to generate a magnetic field in a second direction orthogonal to the first direction, wherein the outer electromagnetic cos θ coil ring is disposed concentrically about the inner electromagnetic cos θ coil ring.

公开(公告)号：US20180274089A1

公开(公告)日：2018-09-27

申请号：US15717822

申请日：2017-09-27

Applicant: Applied Materials, Inc.

Inventor： Yang Yang ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Steven Lane ,  Gonzalo Antonio Monroy ,  Lucy Chen ,  Yue Guo

IPC: C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32

Abstract: A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

公开(公告)号：US20180261429A1

公开(公告)日：2018-09-13

申请号：US15980621

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422

Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US09659751B2

公开(公告)日：2017-05-23

申请号：US14341492

申请日：2014-07-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Yang Yang ,  Steven Lane ,  Lawrence Wong ,  Joseph F. Aubuchon ,  Travis Koh

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.

公开(公告)号：US20150075716A1

公开(公告)日：2015-03-19

申请号：US14026227

申请日：2013-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Kartik Ramaswamy ,  Kenneth S. Collins ,  Shahid Rauf ,  Steven Lane ,  Yang Yang ,  Lawrence Wong

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32458 ,  H05H1/46 ,  H05H2001/4652

Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to two arrays of radial toroidal channels in the ceiling, the resonator having two radial zones and the two arrays of toroidal channels lying in respective ones of the radial zones.

Abstract translation: RF等离子体源具有谐振器，其短路端连接到处理室顶部并感应耦合到天花板中的两个径向环形通道阵列，谐振器具有两个径向区域，并且环形通道的两个阵列位于 径向区。

公开(公告)号：US20140202634A1

公开(公告)日：2014-07-24

申请号：US14149074

申请日：2014-01-07

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Steven Lane ,  Yang Yang

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/32357

Abstract: Radial transmission line based plasma sources for etch chambers are described. In an example, a radial transmission line based plasma source includes a gas delivery channel having a first end coupled to a gas inlet and having a second end coupled to a plasma showerhead. A folded or co-axial stub surrounds at least a portion of the gas delivery channel. An RF input is coupled to the folded or co-axial stub.

Abstract translation: 描述了用于蚀刻室的基于径向传输线的等离子体源。 在一个示例中，基于径向传输线的等离子体源包括气体输送通道，其具有联接到气体入口的第一端并且具有联接到等离子体喷头的第二端。 折叠或同轴的短管围绕气体输送通道的至少一部分。 RF输入耦合到折叠或同轴的短截线。