公开(公告)号：US09034757B2

公开(公告)日：2015-05-19

申请号：US13923035

申请日：2013-06-20

Applicant: Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

Inventor： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

IPC: H01L21/44 ,  H01L21/762 ,  H01L23/48 ,  B81B7/00 ,  B81C1/00 ,  H01L23/00

CPC classification number: H01L21/76224 ,  B81B7/007 ,  B81B2207/096 ,  B81C1/00095 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/05009 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2224/0231 ,  H01L2224/83 ,  H01L21/78 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

Abstract: A method for manufacturing a component having an electrical through-connection is described. The method includes the following steps: providing a semiconductor substrate having a front side and a back side opposite from the front side, producing an insulating trench, which annularly surrounds a contact area, on the front side of the semiconductor substrate, filling the insulating trench with an insulating material, producing an electrical contact structure on the front side of the semiconductor substrate by depositing an electrically conductive material in the contact area, removing the semiconductor material remaining in the contact area on the back side of the semiconductor substrate in order to produce a contact hole which opens up the bottom side of the contact structure, and depositing a metallic material in the contact hole in order to electrically connect the electrical contact structure to the back side of the semiconductor substrate.

Abstract translation: 描述了一种用于制造具有电穿通连接的部件的方法。 该方法包括以下步骤：提供具有与前侧相反的前侧和后侧的半导体衬底，在半导体衬底的正面上产生环形地包围接触区域的绝缘沟槽，填充绝缘沟槽 具有绝缘材料，通过在接触区域中沉积导电材料，在半导体衬底的正面上产生电接触结构，去除残留在半导体衬底背面接触区域中的半导体材料，以便产生 接触孔，其向开放接触结构的底侧开口，并且在接触孔中沉积金属材料，以将电接触结构电连接到半导体衬底的背面。

公开(公告)号：US08928099B2

公开(公告)日：2015-01-06

申请号：US13757261

申请日：2013-02-01

Applicant: Johannes Classen ,  Jochen Reinmuth ,  Andreas Scheurle

Inventor： Johannes Classen ,  Jochen Reinmuth ,  Andreas Scheurle

IPC: H01L29/84 ,  G01P15/08 ,  B81B3/00 ,  B81C1/00 ,  G01P15/125

CPC classification number: B81B3/0018 ,  B81B2201/025 ,  B81C1/00015 ,  B81C1/0015 ,  G01P15/0802 ,  G01P15/125

Abstract: A method for manufacturing a micromechanical component is described in which a trench etching process and a sacrificial layer etching process are carried out to form a mass situated movably on a substrate. The movable mass has electrically isolated and mechanically coupled subsections of a functional layer. A micromechanical component having a mass situated movably on a substrate is also described.

Abstract translation: 描述了一种制造微机械部件的方法，其中进行沟槽蚀刻工艺和牺牲层蚀刻工艺以形成可移动地位于衬底上的质量。 可移动物体具有功能层的电隔离和机械耦合子部分。 还描述了具有可移动地位于基底上的质量的微机械部件。

公开(公告)号：US08792153B2

公开(公告)日：2014-07-29

申请号：US13586363

申请日：2012-08-15

Applicant: Jochen Reinmuth

Inventor： Jochen Reinmuth

IPC: G02B26/08 ,  G02B26/00

CPC classification number: G02B21/084 ,  B81B2201/042 ,  B81B2203/0163 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00166 ,  G02B26/0841

Abstract: A micromechanical component having a displaceable part connected to a residual substrate by at least one spring, and including first and second subunits, between which an insulating intermediate layer and at least one semiconductor boundary layer is formed; an inner region of the first subunit, which inner region is aligned with the second subunit, being patterned out of a substrate using at least one cavity etched in a first etching direction; an outer region of the first subunit of the displaceable part, which outer region faces away from the second subunit, being patterned out of the substrate using at least one hollowed-out section etched in a second etching direction; the second subunit being patterned out of a semiconductor layer deposited onto the insulating intermediate layer and/or on the at least one semiconductor boundary layer using at least one continuous separating trench. Also described is a related manufacturing method.

Abstract translation: 一种微机械部件，其具有通过至少一个弹簧连接到残留基板的位移部件，并且包括第一和第二子单元，其间形成绝缘中间层和至少一个半导体边界层; 所述第一子单元的内部区域与所述第二子单元对准，使用在第一蚀刻方向上蚀刻的至少一个空腔从衬底图案化; 使用在第二蚀刻方向上蚀刻的至少一个中空部分，使所述外部区域远离所述第二子单元的所述可移位部分的第一子单元的外部区域从所述基板图案化; 所述第二子单元使用至少一个连续分离沟槽从沉积在所述绝缘中间层和/或所述至少一个半导体边界层上的半导体层图案化。 还描述了相关的制造方法。

公开(公告)号：US08749250B2

公开(公告)日：2014-06-10

申请号：US13207822

申请日：2011-08-11

Applicant: Jochen Reinmuth ,  Gary O'Brien

Inventor： Jochen Reinmuth ,  Gary O'Brien

IPC: G01R27/26 ,  G01P15/125

CPC classification number: G01L9/0042 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/053 ,  B81C1/00142 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0831

Abstract: A micromechanical component is described having a substrate which has a movable mass which is connected via at least one spring to the substrate so that the movable mass is displaceable with respect to the substrate, and at least one fixedly mounted stator electrode. The movable mass and the at least one spring are structured from the substrate. At least one separating trench which at least partially surrounds the movable mass is formed in the substrate. The at least one stator electrode is situated adjacent to an outer surface of the movable mass which is at least partially surrounded by the separating trench, with the aid of at least one supporting connection which connects the at least one stator electrode to an anchor situated on the substrate and spans a section of the separating trench. Also described is a manufacturing method for a micromechanical component.

Abstract translation: 描述了一种微机械部件，其具有基板，该基板具有通过至少一个弹簧连接到基板的可移动质量块，使得可移动质量块可相对于基板移动，以及至少一个固定安装的定子电极。 可移动块体和至少一个弹簧由衬底构成。 在衬底中形成至少部分地围绕可移动块的至少一个分离沟槽。 所述至少一个定子电极位于所述可移动块的外表面附近，所述外表面至少部分地被所述分离沟槽包围，借助于至少一个支撑连接，所述至少一个支撑连接将所述至少一个定子电极连接到位于 衬底并且跨越分离沟槽的一部分。 还描述了一种用于微机械部件的制造方法。

公开(公告)号：US08679975B2

公开(公告)日：2014-03-25

申请号：US13004599

申请日：2011-01-11

Applicant: Jochen Reinmuth ,  Barbara Will ,  Heribert Weber

Inventor： Jochen Reinmuth ,  Barbara Will ,  Heribert Weber

IPC: H01L21/60

CPC classification number: H01L21/3081 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00404 ,  B81C1/00626 ,  H01L21/0334 ,  H01L21/76229

Abstract: A method is described for creating at least one recess in a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one mask to the semiconductor component, forming at least one lattice having at least one or more lattice openings in the mask over the recess to be formed, the lattice opening or lattice openings being formed as a function of the etching rate and/or the dimensioning of the recess to be formed; forming the recess below the lattice.

Abstract translation: 描述了一种用于在半导体部件，特别是微机电或电半导体部件中形成至少一个凹部的方法，其具有以下步骤：将至少一个掩模施加到半导体部件，形成至少一个具有至少一个或多个 在要形成的凹部上的掩模中的格子孔，形成作为蚀刻速率和/或要形成的凹部的尺寸的函数的格子孔或格子孔; 在网格下面形成凹陷。

公开(公告)号：US08659099B2

公开(公告)日：2014-02-25

申请号：US13586576

申请日：2012-08-15

Applicant: Jochen Reinmuth ,  Heribert Weber

Inventor： Jochen Reinmuth ,  Heribert Weber

IPC: H01L29/84

CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01C19/5783

Abstract: A method for manufacturing a micromechanical structure includes: forming a first insulation layer above a substrate; forming a first micromechanical functional layer on the first insulation layer; forming multiple first trenches in the first micromechanical functional layer, which trenches extend as far as the first insulation layer; forming a second insulation layer on the first micromechanical functional layer, which second insulation layer fills up the first trenches; forming etch accesses in the second insulation layer, which etch accesses locally expose the first micromechanical functional layer; and etching the first micromechanical functional layer through the etch accesses, the filled first trenches and the first insulation layer acting as an etch stop.

Abstract translation: 一种制造微机械结构的方法包括：在基板上形成第一绝缘层; 在所述第一绝缘层上形成第一微机械功能层; 在所述第一微机械功能层中形成多个第一沟槽，所述沟槽延伸到所述第一绝缘层; 在所述第一微机械功能层上形成第二绝缘层，所述第二绝缘层填充所述第一沟槽; 在所述第二绝缘层中形成蚀刻访问，所述蚀刻访问局部暴露所述第一微机械功能层; 并且通过蚀刻访问蚀刻第一微机械功能层，填充的第一沟槽和用作蚀刻停止层的第一绝缘层。

公开(公告)号：US08607447B2

公开(公告)日：2013-12-17

申请号：US13004427

申请日：2011-01-11

Applicant: Jochen Reinmuth ,  Heribert Weber

Inventor： Jochen Reinmuth ,  Heribert Weber

IPC: H01L23/488 ,  H01L21/768

CPC classification number: B81B7/0006 ,  B81B2207/096 ,  H01L21/743 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/1461 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/4922 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for providing and connecting a first contact area to at least one second contact area on a substrate, in particular in the case of a semiconductor component, which includes providing at least one insulation layer on the substrate, forming an opening in the at least one insulation layer over at least one insulation trench of a first contact area, applying at least one metal layer to the insulation layer, forming the first and second contact areas in the at least one metal layer and at least one printed conductor between the two contact areas, and forming the insulation trench.

Abstract translation: 一种用于将第一接触区域提供并连接到衬底上的至少一个第二接触区域的方法，特别是在半导体部件的情况下，其包括在所述衬底上提供至少一个绝缘层，至少在所述衬底上形成开口 在第一接触区域的至少一个绝缘沟槽上的一个绝缘层，将至少一个金属层施加到所述绝缘层，在所述至少一个金属层中形成所述第一和第二接触区域，以及在所述两个接触件之间形成至少一个印刷导体 区域，并形成绝缘沟槽。

公开(公告)号：US20130200473A1

公开(公告)日：2013-08-08

申请号：US13757261

申请日：2013-02-01

Applicant: Johannes CLASSEN ,  Jochen Reinmuth ,  Andreas Scheurle

Inventor： Johannes CLASSEN ,  Jochen Reinmuth ,  Andreas Scheurle

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0018 ,  B81B2201/025 ,  B81C1/00015 ,  B81C1/0015 ,  G01P15/0802 ,  G01P15/125

Abstract: A method for manufacturing a micromechanical component is described in which a trench etching process and a sacrificial layer etching process are carried out to form a mass situated movably on a substrate. The movable mass has electrically isolated and mechanically coupled subsections of a functional layer. A micromechanical component having a mass situated movably on a substrate is also described.

Abstract translation: 描述了一种制造微机械部件的方法，其中进行沟槽蚀刻工艺和牺牲层蚀刻工艺以形成可移动地位于衬底上的质量。 可移动物体具有功能层的电隔离和机械耦合子部分。 还描述了具有可移动地位于基底上的质量的微机械部件。

公开(公告)号：US20110198713A1

公开(公告)日：2011-08-18

申请号：US12737521

申请日：2009-06-03

Applicant: Jochen Reinmuth ,  Michael Saettler ,  Stefan Weiss ,  Arnim Hoechst

Inventor： Jochen Reinmuth ,  Michael Saettler ,  Stefan Weiss ,  Arnim Hoechst

IPC: H01L29/84 ,  H01L21/00

CPC classification number: H04R19/005 ,  B81B2201/0257 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81C1/00047 ,  B81C1/00103 ,  H04R31/00

Abstract: In a method for manufacturing a micromechanical component, a cavity is produced in the substrate from an opening at the rear of a monocrystalline semiconductor substrate. The etching process used for this purpose and the monocrystalline semiconductor substrate used are controlled in such a way that a largely rectangular cavity is formed.

Abstract translation: 在微机械部件的制造方法中，从单晶半导体基板的背面的开口在基板中产生空腔。 用于此目的的蚀刻工艺和所使用的单晶半导体衬底以这样的方式被控制，使得形成了大致矩形的空腔。

公开(公告)号：US20110169143A1

公开(公告)日：2011-07-14

申请号：US13004638

申请日：2011-01-11

Applicant: Jochen Reinmuth ,  Eckhard Graf

Inventor： Jochen Reinmuth ,  Eckhard Graf

IPC: H01L23/552 ,  H01L21/28

CPC classification number: B81C1/00071 ,  B81B2207/07 ,  B81B2207/096 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/481 ,  H01L23/4855 ,  H01L23/552 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/02321 ,  H01L2224/0233 ,  H01L2224/02335 ,  H01L2224/024 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/48463 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for establishing and closing at least one trench of a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one metal layer over the trench to be formed; forming a lattice having lattice openings in the at least one metal layer over the trench to be formed; forming the trench below the metal lattice, and closing the lattice openings over the trench.

Abstract translation: 一种用于建立和闭合半导体部件，特别是微机电或电半导体部件的至少一个沟槽的方法，具有以下步骤：在要形成的沟槽上施加至少一个金属层; 在要形成的沟槽上的所述至少一个金属层中形成具有格子孔的格子; 在金属晶格下面形成沟槽，并且关闭沟槽上方的格子孔。