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    LOW-COST MINIATURE MEMS VIBRATION SENSOR
    52.
    发明申请
    LOW-COST MINIATURE MEMS VIBRATION SENSOR 审中-公开

    公开(公告)号：US20170240418A1

    公开(公告)日：2017-08-24

    申请号：US15382581

    申请日：2016-12-16

    Applicant: Knowles Electronics, LLC

    Inventor： Sarmad Qutub ,  Martin Volk

    IPC: B81B7/00 ,  H04R19/04

    CPC classification number: B81B7/0041 ,  B81B2201/0285 ,  B81C1/00269 ,  B81C2203/0145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H04R1/021 ,  H04R1/04 ,  H04R19/04 ,  H04R2201/003 ,  H01L2924/00014

    Abstract: A vibrational sensor comprises a microelectromechanical (MEMS) microphone having a base and a lid defining an enclosure, a MEMS acoustic pressure sensor within the enclosure, and a port defining an opening through the enclosure and material that is arranged to plug the port of the MEMS microphone. In embodiments, the MEMS microphone further includes an integrated circuit within the enclosure that is electrically connected to the MEMS acoustic pressure sensor. In some embodiments, the integrated circuit is configured to bias and buffer the MEMS acoustic pressure sensor. In these and other embodiments, the integrated circuit includes circuitry for conditioning and processing electrical signals generated by the MEMS acoustic pressure sensor. In embodiments, the material is arranged with respect to the port so as to cause the MEMS acoustical pressure sensor to sense vibrational energy rather than acoustic energy as in a conventional MEMS microphone.

    Functional element, electronic apparatus, and moving object
    54.
    发明授权
    Functional element, electronic apparatus, and moving object 有权
    功能元件，电子设备和移动物体

    公开(公告)号：US09446939B2

    公开(公告)日：2016-09-20

    申请号：US14305259

    申请日：2014-06-16

    Applicant: Seiko Epson Corporation

    Inventor： Satoru Tanaka

    IPC: B81B3/00 ,  B81B7/00

    CPC classification number: B81B3/0097 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0285

    Abstract: A functional element includes a first electrode section, a second electrode section, a first wiring line connected to the first electrode section, and a second wiring line connected to the second electrode section, the first wiring line is provided with at least one first intersecting section intersecting with a wiring line other than the second wiring line, the second wiring line includes at least one second intersecting section intersecting with a wiring line other than the first wiring line, and a difference between a number of the first intersecting sections and a number of the second intersecting sections satisfies a condition one of equal to and lower than 50% with respect to larger one of the number of the first intersecting sections and the number of the second intersecting sections.

    Abstract translation: 功能元件包括第一电极部分，第二电极部分，连接到第一电极部分的第一布线和连接到第二电极部分的第二布线，第一布线设置有至少一个第一相交部分 与第二布线以外的布线相交，第二布线包括与第一布线以外的布线交叉的至少一个第二交叉部，第一相交部的数量与第 第二交叉部分相对于第一交叉部分的数量和第二交叉部分的数量中的较大的一个满足等于或小于50％的条件一。

    Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer
    56.
    发明授权
    Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer 有权
    谐振换能器，其制造方法和谐振换能器的多层结构

    公开(公告)号：US09139419B2

    公开(公告)日：2015-09-22

    申请号：US14336613

    申请日：2014-07-21

    Applicant: YOKOGAWA ELECTRIC CORPORATION

    Inventor： Takashi Yoshida ,  Shuuji Okuda ,  Shigeto Iwai

    IPC: H01L29/84 ,  B81B3/00 ,  G01N29/12 ,  H01L41/09 ,  H03H3/007 ,  H03H9/24 ,  B81B7/02 ,  B81C1/00 ,  G01L1/14

    CPC classification number: B81B3/0021 ,  B81B3/0002 ,  B81B7/02 ,  B81B2201/0271 ,  B81B2201/0285 ,  B81C1/00198 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L1/14 ,  G01N29/12 ,  G01N2291/014 ,  G01N2291/02827 ,  H01L41/094 ,  H03H3/0072 ,  H03H9/2463

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.

    Abstract translation: 谐振换能器包括硅单晶衬底，设置在硅单晶衬底上的硅单晶谐振器，由硅构成的外壳，围绕谐振器间隙，并与硅单晶衬底一起形成腔室，令人兴奋的 模块，其被配置为激励所述谐振器;振动检测模块，被配置为检测所述谐振器的振动，设置在所述腔室上的第一层，所述第一层具有通孔，设置在所述第一层上的第二层， 第一层和第二层，以及从第二层朝向谐振器延伸的突起，突起与谐振器在空间上分离，突起与第一层隔开第一间隙，第二层与第一层分离 通过第二间隙，第一间隙与第二间隙连通。

    Quantum tunnelling transducer device
    59.
    发明授权
    Quantum tunnelling transducer device 有权
    量子隧道传感器装置

    公开(公告)号：US08033091B2

    公开(公告)日：2011-10-11

    申请号：US10554312

    申请日：2004-04-22

    Applicant: Marek Michalewicz ,  Zygmunt Rymuza

    Inventor： Marek Michalewicz ,  Zygmunt Rymuza

    IPC: G01D5/14

    CPC classification number: B81B3/0051 ,  B81B3/0021 ,  B81B2201/0285 ,  B81B2203/0109 ,  B81B2203/051 ,  G01C19/00 ,  G01D21/00 ,  G01P15/0894 ,  Y10S977/724 ,  Y10S977/725 ,  Y10S977/732 ,  Y10S977/733

    Abstract: A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

    Abstract translation: 单片微型或纳米机电换能器装置包括分别安装一个或多个细长电导体（40）和弹性固态铰链装置（30,32）的一对基板（20,25），所述弹性固态铰链装置与所述基板成一体并将其连接， 衬底，使得当在导体上施加合适的电势差时，衬底的各个细长电导体（40）以允许导体之间的可检测的量子隧穿电流的间隔相对。 固态铰链装置允许基板横向于细长电导体的相对平行平移。

    Vibration sensor and method for manufacturing the vibration sensor
    60.
    发明授权
    Vibration sensor and method for manufacturing the vibration sensor 有权
    振动传感器及制造振动传感器的方法

    公开(公告)号：US07943413B2

    公开(公告)日：2011-05-17

    申请号：US12440127

    申请日：2007-07-20

    Applicant: Takashi Kasai ,  Yasuhiro Horimoto ,  Fumihito Kato ,  Masaki Munechika ,  Shuichi Wakabayashi ,  Toshiyuki Takahashi ,  Masayuki Inuga

    Inventor： Takashi Kasai ,  Yasuhiro Horimoto ,  Fumihito Kato ,  Masaki Munechika ,  Shuichi Wakabayashi ,  Toshiyuki Takahashi ,  Masayuki Inuga

    IPC: H01L29/84 ,  H01L21/28

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed, and forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially.

    Abstract translation: 一种制造振动传感器的方法，包括在单晶硅的半导体衬底的前表面的一个部分处形成牺牲层，所述材料用蚀刻剂蚀刻半导体衬底的各向同性蚀刻材料，形成具有材料的薄膜保护膜 在牺牲层周围的牺牲层和半导体衬底的前表面上的蚀刻剂的耐受性，在牺牲层的上侧形成单晶硅，多晶硅或非晶硅的薄膜，打开背面 在形成在半导体衬底的背面上的用于蚀刻半导体衬底的蚀刻剂的表面保护膜的蚀刻窗口中，通过使用晶体取向的蚀刻通过蚀刻半导体衬底各向异性地在半导体衬底中形成通孔 应用来自后表面窗口的蚀刻剂，然后蚀刻 在蚀刻剂到达半导体衬底的前表面之后，通过蚀刻剂各向同性地施加牺牲层，然后通过使用晶体取向的蚀刻从蚀刻剂扩散到牺牲层之后形成的空间来各向异性蚀刻半导体衬底 并且通过部分去除薄膜保护膜来形成用于在半导体衬底的上表面上支撑薄膜的保持器。

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