Crystal monochromator
    51.
    发明授权
    Crystal monochromator 失效
    水晶单色仪

    公开(公告)号:US4737973A

    公开(公告)日:1988-04-12

    申请号:US941647

    申请日:1986-12-15

    Abstract: A focusing X-ray crystal monochromator in which one or more crystal layers having different spacings of lattice plane are stacked on a crystal base. Due to different spacings of lattice plane, the angle of reflection and diffraction of a diverging incident X-ray beam can be so changed that the beam takes a parallel or focusing direction for monochromatization. Thus, the monochromator of the present invention can be applied to the X-ray lithography for transferring a pattern of high resolution or the X-ray analysis such as the fine X-ray diffraction.

    Abstract translation: 将其中具有不同晶格面间隔的一个或多个晶体层堆叠在晶体基底上的聚焦X射线晶体单色仪。 由于晶格面的不同间隔,发散的入射X射线束的反射角和衍射角可以如此改变,使得束取平行或聚焦方向进行单色化。 因此,本发明的单色仪可以应用于用于转印高分辨率图案或X射线分析的精细X射线衍射的X射线光刻。

    Multi-layer monochromator
    52.
    发明授权
    Multi-layer monochromator 失效
    多层单色仪

    公开(公告)号:US3885153A

    公开(公告)日:1975-05-20

    申请号:US48142174

    申请日:1974-06-20

    Applicant: US ENERGY

    Abstract: This invention provides an artificial monochromator crystal for efficiently selecting a narrow band of neutron wavelengths from a neutron beam having a Maxwellian wavelength distribution, by providing on a substrate a plurality of germanium layers, and alternate periodic layers of a different metal having tailored thicknesses, shapes, and volumetric and neutron scattering densities.

    Abstract translation: 本发明提供一种人造单色器晶体,用于通过在衬底上提供多个锗层和具有定制的厚度,形状的不同金属的交替周期性层,从具有麦克斯韦波长分布的中子束有效地选择中子波长窄带 ,以及体积和中子散射密度。

    Extreme UV radiation reflecting element comprising a sputter-resistant material
    60.
    发明授权
    Extreme UV radiation reflecting element comprising a sputter-resistant material 有权
    极紫外辐射反射元件包括抗溅射材料

    公开(公告)号:US08693090B2

    公开(公告)日:2014-04-08

    申请号:US13000674

    申请日:2009-07-01

    Abstract: The invention relates to an improved EUV reflecting element comprising a) a first layer essentially made out of a highly reflective material b) a second layer having a thickness of ≦5 nm and essentially made out of a material with a sputter resistance of ≦10 nm per 108 shots and whereby the second layer is provided in the path of the incident and/or reflected EUV light.

    Abstract translation: 本发明涉及一种改进的EUV反射元件,其包括:a)基本上由高反射材料制成的第一层; b)具有≦̸ 5nm厚度的第二层,并且基本上由溅射电阻为n1E的材料制成; 每108次照射10nm,由此第二层设置在入射和/或反射的EUV光的路径中。

Patent Agency Ranking