公开(公告)号：US06717351B2

公开(公告)日：2004-04-06

申请号：US09779508

申请日：2001-02-09

Applicant: Yongjun Jeff Hu

Inventor： Yongjun Jeff Hu

IPC: H01J162

CPC classification number: H01J9/025 ,  H01J2201/30407

Abstract: An emission site for a large area passive matrix cold cathode field emission display having an emission tip with a sharp profile is disclosed. A metallic film formed of iridium silicide (IrSi) is used to coat the tip. By using IrSi the tips of the emission sites can be formed at low temperatures. In addition, IrSi is a fine grain material that maintains a sharp profile and can be formed in a layer as thin as 100 A°.

Abstract translation: 公开了具有具有尖锐轮廓的发射尖端的大面积无源矩阵冷阴极场发射显示器的发射场所。 使用由铱硅化物（IrSi）形成的金属膜来涂覆尖端。 通过使用IrSi，可以在低温下形成发射部位的尖端。 此外，IrSi是细晶粒材料，其保持锋利的轮廓，并且可以形成为薄至100A°的层。

公开(公告)号：US20030155859A1

公开(公告)日：2003-08-21

申请号：US10374263

申请日：2003-02-27

Inventor： Masayuki Nakamoto ,  Atsuo Inoue

IPC: H01J001/62

CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30423

Abstract: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.

Abstract translation: 一种制造具有发射体形状的场致发射器件的方法，包括以下步骤：通过切割基底材料的表面部分形成具有发射体形状的主表面的第一原始板，在主表面上形成第一材料层 提供发射体形状的第一原始板; 将第一材料层与第一原版板分离，从而获得具有凹部的第二原版，第一原版上的发射体形状转移到其上，在第二原版的主表面上形成第二材料层， 被提供; 并且将第二材料层与第二原版分离，从而获得具有第二原版的凹部的形状被转印到其上的突出部的基板。

公开(公告)号：US06524874B1

公开(公告)日：2003-02-25

申请号：US09129978

申请日：1998-08-05

Applicant: Jim Alwan

Inventor： Jim Alwan

IPC: H01J900

CPC classification number: B82Y30/00 ,  B82Y20/00 ,  H01J9/025 ,  H01J2201/30407 ,  Y10S977/888 ,  Y10S977/895

Abstract: In one aspect, the invention includes a method of forming field emission emitter tips, comprising: a) providing a masking material over a semiconductor substrate to form a masking-material-covered substrate; b) submerging at least a portion of the masking-material-covered semiconductor substrate in a liquid; c) providing particulates suspended on an upper surface of the liquid; d) while the particulates are suspended, moving the submerged masking-material-covered substrate relative to the suspended particulates to form tightly packed monolayer of the particulates supported on the masking material of the masking-material-covered substrate; e) decreasing a dimension of the particulates to leave some portions of the masking material covered by the particulates and other portions of the masking material uncovered by the particulates; f) after decreasing the dimension and while the particulates are supported on the upper surface, exposing the masking-material-covered substrate to first etching conditions which remove uncovered portions of the masking material while leaving covered portions of the masking material over the substrate to define a patterned masking layer; g) removing the particulates; and h) while the patterned masking layer is over the semiconductor substrate, exposing the semiconductor substrate to a second etching conditions to pattern the semiconductor substrate into emitter tips.

Abstract translation: 一方面，本发明包括一种形成场发射发射器尖端的方法，包括：a）在半导体衬底上提供掩模材料以形成覆盖掩模材料的衬底; b）将掩模材料覆盖的半导体衬底的至少一部分浸没在液体中; c）提供悬浮在液体的上表面上的微粒; d）当颗粒悬浮时，相对于悬浮的颗粒移动浸没的掩蔽材料覆盖的基板，以形成负载在掩蔽材料覆盖的基板的掩模材料上的颗粒的紧密堆积的单层; e）减小微粒的尺寸，以使掩蔽材料的一些部分由被微粒暴露的掩蔽材料的微粒和其它部分覆盖; f）在减小尺寸之后并且当颗粒被支撑在上表面上时，将掩蔽材料覆盖的基底暴露于第一蚀刻条件，其去除掩模材料的未覆盖部分，同时将掩模材料的覆盖部分留在衬底上以限定 图案化掩模层; g）除去颗粒物; 以及h）当图案化掩模层在半导体衬底上方时，将半导体衬底暴露于第二蚀刻条件以将半导体衬底图案化成发射极尖端。

公开(公告)号：US06464550B2

公开(公告)日：2002-10-15

申请号：US09838845

申请日：2001-04-20

Applicant: Ji Ung Lee

Inventor： Ji Ung Lee

IPC: H01J902

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30407

Abstract: The present invention includes field emission display backplates and methods of forming field emission display backplates. According to one aspect, the present invention provides a field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.

Abstract translation: 本发明包括场发射显示背板和形成场发射显示背板的方法。 根据一个方面，本发明提供一种场发射显示器背板，其包括具有表面的基板; 从衬底的表面延伸的发射体; 以及具有上表面，下表面和限定与发射器对准的开口的开口表面的阳极，所述开口表面包括相对于阳极向外弯曲的第一部分和相对于阳极向内弯曲的第二部分 。

公开(公告)号：US06452167B1

公开(公告)日：2002-09-17

申请号：US09315001

申请日：1999-05-19

Applicant: Thomas E. Felter

Inventor： Thomas E. Felter

IPC: H01J4914

CPC classification number: H01J49/147 ,  H01J1/3042 ,  H01J49/08 ,  H01J49/4215 ,  H01J2201/30407

Abstract: An improved quadrupole mass spectrometer is described. The improvement lies in the substitution of the conventional hot filament electron source with a cold cathode field emitter array which in turn allows operating a small QMS at much high internal pressures then are currently achievable. By eliminating of the hot filament such problems as thermally “cracking” delicate analyte molecules, outgassing a “hot” filament, high power requirements, filament contamination by outgas species, and spurious em fields are avoid all together. In addition, the ability of produce FEAs using well-known and well developed photolithographic techniques, permits building a QMS having multiple redundancies of the ionization source at very low additional cost.

Abstract translation: 描述了改进的四极质谱仪。 改进之处在于用冷阴极场发射体阵列代替传统的热丝电子源，该冷阴极场发射器阵列又允许在很高的内部压力下操作小的QMS，然后目前是可实现的。 通过消除热丝，诸如热“裂解”精细的分析物分子，排除“热”丝，高功率需求，排气物质的细丝污染和杂散电场等问题都避免在一起。 此外，使用已知和发展良好的光刻技术制造FEA的能力允许以非常低的附加成本构建具有多个电离源冗余的QMS。

公开(公告)号：US20020063513A1

公开(公告)日：2002-05-30

申请号：US09244558

申请日：1999-02-03

Inventor： JI UNG LEE

IPC: H01J001/62

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30407

Abstract: The present invention includes field emission display backplates and methods of forming field emission display backplates. According to one aspect, the present invention provides a field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.

Abstract translation: 本发明包括场发射显示背板和形成场发射显示背板的方法。 根据一个方面，本发明提供一种场发射显示器背板，其包括具有表面的基板; 从衬底的表面延伸的发射体; 以及具有上表面，下表面和限定与发射器对准的开口的开口表面的阳极，所述开口表面包括相对于阳极向外弯曲的第一部分和相对于阳极向内弯曲的第二部分 。

公开(公告)号：US20020021069A1

公开(公告)日：2002-02-21

申请号：US09838845

申请日：2001-04-20

Inventor： Ji Ung Lee

IPC: H01J001/30 ,  H01J009/02

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30407

Abstract: The present invention includes field emission display backplates and methods of forming field emission display backplates. According to one aspect, the present invention provides a field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.

公开(公告)号：US06328620B1

公开(公告)日：2001-12-11

申请号：US09205197

申请日：1998-12-04

Applicant: Yongjun Jeff Hu

Inventor： Yongjun Jeff Hu

IPC: H01J904

CPC classification number: H01J9/025 ,  H01J2201/30407

Abstract: An emission site for a large area passive matrix cold cathode field emission display having an emission tip with a sharp profile is disclosed. A metallic film formed of iridium silicide (IrSi) is used to coat the tip. By using IrSi the tips of the emission sites can be formed at low temperatures. In addition, IrSi is a fine grain material that maintains a sharp profile and can be formed in a layer as thin as 100 Å.

公开(公告)号：US6136621A

公开(公告)日：2000-10-24

申请号：US416051

申请日：1999-10-12

Applicant: Gary W. Jones ,  Steven M. Zimmerman

Inventor： Gary W. Jones ,  Steven M. Zimmerman

IPC: H01J3/02 ,  H01J9/02 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30407

Abstract: A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions. An etch resistant layer may optionally be provided between the upper layer of insulator material and the gate material.

Abstract translation: 公开了高纵横比门控发射极结构和制造该结构的方法。 发射器可以以紧密堆叠的阵列提供在支撑上。 绝缘体材料的两个不同层可围绕发射器。 绝缘体材料的下层可以是非保形施加的喷涂或旋涂绝缘体。 非共形绝缘体材料可以在发射体的基极区域处聚集，使得发射体的尖端区域延伸出绝缘体材料的下层。 使用保形工艺将绝缘体材料的上层施加到下层，使得发射体的尖端区域被绝缘体材料的上层覆盖。 栅极材料被施加到绝缘体材料的上层。 在尖端区域上的栅极材料中设置孔，并且在围绕尖端区域的绝缘体材料的上层中设置阱。 可以在绝缘体材料的上层和栅极材料之间可选地设置耐蚀刻层。

公开(公告)号：US6132278A

公开(公告)日：2000-10-17

申请号：US883417

申请日：1997-06-25

Applicant: Weng Poo Kang ,  Jimmy Lee Davidson ,  David V. Kerns, Jr.

Inventor： Weng Poo Kang ,  Jimmy Lee Davidson ,  David V. Kerns, Jr.

IPC: G01L9/00 ,  G01P15/08 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J19/02 ,  H01J19/24 ,  H01J31/12 ,  H01J9/38

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G01L9/0041 ,  G01L9/0047 ,  G01P15/0802 ,  G01P15/0894 ,  H01J1/3042 ,  H01J1/3044 ,  H01J3/022 ,  H01J31/127 ,  G01P2015/0828 ,  H01J2201/30407 ,  H01J2201/30457

Abstract: Diamond microtip field emitters are used in diode and triode vacuum microelectronic devices, sensors and displays. Diamond diode and triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Abstract translation: 金刚石微带场发射器用于二极管和三极管真空微电子器件，传感器和显示器。 可以制造具有整体阳极和栅格结构的金刚石二极管和三极管器件。 在制造工艺中在发射体上形成超尖尖，其中金刚石以两步沉积顺序沉积到模腔中。 在沉积金刚石期间，仔细控制碳石墨含量以增强排放性能。 尖端或发射器通过后制造处理来进一步提高性能。