Abstract:
In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.
Abstract:
A multilayer printed wiring board which permits the formation of fine wiring patterns, thereby increasing the density of wiring patterns. Using photosensitive glass having a coefficient of thermal expansion close to that of a copper film as a core substrate, a through hole is formed in the photosensitive glass by photolithography, a sputtering silicon oxide layer and a sputtering silicon nitride layer are formed to prevent leak of alkali metal ions from the photosensitive glass, a sputtering chromium layer, a sputtering chromium-copper layer and a sputtering copper layer are formed to enhance the adhesion strength between the copper film and the sputtering silicon oxide layer, and a copper film of 1 to 20 μm thick is formed. With resin filled into the interior of the through hole, a wiring layer is patterned by etching, an insulating layer is formed, and the surface is covered with a surface treatment layer and a cover coat.
Abstract:
The present invention has an object to provide a method for forming an oxide dielectric layer, which dielectric layer is formed by applying the sol-gel method, and is hardly damaged by an etching solution and excellent in dielectric characteristics such as a large electric capacitance. To achieve the object, the forming method of an oxide dielectric layer by applying a sol-gel method characterized by being provided with the following processes (a) to (c) is employed. Process (a): A solution preparing process of preparing a sol-gel solution for manufacturing an aiming oxide dielectric layer. Process (b): A coating process wherein stages of the sol-gel solution coating on the surface of a metal substrate followed by drying in an oxygen-containing atmosphere followed by pyrolysis in an oxygen-containing atmosphere sequentially is made one unit step; the one unit step is repeated twice or more times; and a pre-baking stage at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like is provided optionally between the one unit step and the next one unit step to control the film thickness. Process (c): A baking process of finally subjecting the coated metal substrate to a baking process at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like to finish the dielectric layer.
Abstract:
A method of forming a pre-patterned high-k dielectric film onto a support layer. The method includes: providing a support layer; providing a template defining template openings therein exhibiting a pattern that is a mirror image of a pattern of the pre-patterned high-k dielectric film; disposing the template onto the support layer; providing a high-k precursor material inside the template openings; curing the high-k precursor material inside the template openings to yield a cured film; and removing the template from the support layer after curing to leave the cured film on the conductive film.
Abstract:
A method of manufacturing a circuit board embedding a thin film capacitor, the method including: forming a sacrificial layer on a first substrate; forming a dielectric layer on the sacrificial layer; forming a first electrode layer on the dielectric layer; disposing the first substrate on the second substrate in such a way that the first electrode layer is bonded to a top of a second substrate; decomposing the sacrificial layer by irradiating a laser beam onto the sacrificial layer through the first substrate; separating the first substrate from the second substrate; and forming a second electrode layer on the dielectric layer.
Abstract:
An apparatus including a first electrode; a second electrode; a first and second ceramic material disposed between the first electrode and the second electrode, the second ceramic material having a greater electrical conductivity than the first ceramic material. A method including forming a first ceramic material film and a different second ceramic material film on a first electrode; and forming a second electrode on the second ceramic material film to form a capacitor structure having the first ceramic material film and the second ceramic material film disposed between the first electrode and the second electrode, wherein the first ceramic material has a conductivity selected to dampen undesired oscillations in electrical device operation to which the capacitor structure may be exposed. An apparatus including a first electrode; a second electrode; and a composite dielectric including a plurality of dielectric films including a different Curie temperature.
Abstract:
In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.
Abstract:
A method is for fabricating an embedded capacitance printed circuit board assembly (400, 1100). The embedded capacitance printed circuit board assembly includes two embedded capacitance structures (110). Each capacitance structure (110) includes a crystallized dielectric oxide layer (115) sandwiched between an outer electrode layer (120) and an inner electrode layer (125) in which the two inner electrode layers are electrically connected together. A rivet via (1315) and a stacked via (1110) formed from a button via (910) and a stacked blind via (1111) may be used to electrically connect the two inner electrode layers together. A spindle via (525) may be formed through the inner and outer layers. The multi-layer printed circuit board may be formed from a capacitive laminate (100) that includes two capacitance structures.
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a substrate core by attaching a first dielectric layer to a second conductive layer of a thin film capacitor, and attaching a second dielectric layer to a first conductive layer of the thin film capacitor.
Abstract:
In a printed wiring board 10, an upper electrode connecting portion 52 penetrates through a capacitor portion 40 in top to bottom direction so that an upper electrode connecting portion first part 52a is not in contact with the capacitor portion 40, passes through an upper electrode connecting portion third part 52c provided at the upper portion of the capacitor portion 40, and then connects from the upper electrode connecting portion second part 52b to an upper electrode 42. Furthermore, a lower electrode connecting portion 51 penetrates through the capacitor portion 40 in top to bottom direction so that it is not in contact with the upper electrode 42 of the capacitor portion 40, but is in contact with a lower electrode 41. Therefore, the upper electrode connecting portion 52 and the lower electrode connecting portion 51 can be formed even after in process of build-up, the whole surface is covered by a high dielectric capacitor sheet that has a structure that a high dielectric layer is sandwiched between two metal foils and will afterwards serve as the capacitor portion 40.