公开(公告)号：US20080315114A1

公开(公告)日：2008-12-25

申请号：US11767657

申请日：2007-06-25

Applicant: Shengwu Chang ,  Frank Slnclalr

Inventor： Shengwu Chang ,  Frank Slnclalr

IPC: H01B17/20 ,  H01J27/00

CPC classification number: H01B17/64

Abstract: A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.

Abstract translation: 描述了一种用于防止由于三结击穿引起的离子注入机不稳定性的高压绝缘体。 在一个实施例中，存在用于防止离子注入机中的三重连接不稳定性的装置。 在本实施例中，存在第一金属电极和第二金属电极。 绝缘体设置在第一金属电极和第二金属电极之间。 绝缘体具有在第一金属电极和第二金属电极之间的至少一个表面，其暴露于输送由离子注入机产生的离子束的真空。 第一导电层位于第一金属电极和绝缘体之间。 第一导电层防止在第一电极，绝缘体和真空的界面处发生三结击穿。 第二导电层位于第二金属电极和与第一导电层相对的绝缘体之间。 第二导电层防止在第二电极，绝缘体和真空的界面处发生三结击穿。

公开(公告)号：US20080277592A1

公开(公告)日：2008-11-13

申请号：US11877593

申请日：2007-10-23

Applicant: LIN XIAO ,  YUAN-CHAO YANG ,  LI QIAN ,  LIANG LIU ,  PI-JIN CHEN ,  ZHAO-FU HU ,  SHOU-SHAN FAN

Inventor： LIN XIAO ,  YUAN-CHAO YANG ,  LI QIAN ,  LIANG LIU ,  PI-JIN CHEN ,  ZHAO-FU HU ,  SHOU-SHAN FAN

IPC: H01J27/00

CPC classification number: H01J27/26 ,  H01J27/024 ,  H01J2201/30469

Abstract: An ion source element includes a cold cathode, a grid electrode, and an ion accelerator. The cold cathode, the grid electrode, and the ion accelerator are arranged in that order and are electrically separated from one another. A space between the cold cathode and the grid electrode is essentially smaller than a mean free path of electrons at an operating pressure. The ion source element is thus stable and suitable for various applications.

Abstract translation: 离子源元件包括冷阴极，栅电极和离子加速器。 冷阴极，栅电极和离子加速器按照该顺序排列并且彼此电分离。 冷阴极和栅电极之间的空间基本上小于在工作压力下电子的平均自由程。 因此离子源元件是稳定的，适用于各种应用。

公开(公告)号：US07391019B2

公开(公告)日：2008-06-24

申请号：US11491439

申请日：2006-07-21

Applicant: Jean-Jacques Dunyach ,  Nigel P. Gore ,  Paul R. Atherton

Inventor： Jean-Jacques Dunyach ,  Nigel P. Gore ,  Paul R. Atherton

IPC: H01J27/00 ,  H01J49/10 ,  H01J49/00 ,  B01D59/44

CPC classification number: H01J49/167 ,  H01J49/044

Abstract: An on-axis ion source has an ionization chamber and an adjacent low-pressure region. The on-axis ion source also includes a capillary tube having an axial bore for supporting fluid communication between the ionization chamber and the adjacent low-pressure region, the axial bore of the capillary tube being substantially concentrically aligned with the orifice of a skimmer located downstream in the ion path from the capillary tube. A blocking element is provided in an aligned facing arrangement with the axial bore of the capillary tube and on an opposite side of the orifice relative to the capillary tube. The blocking element receives droplets or particles flowing through the axial bore of the capillary tube and passing through the orifice of the skimmer. The combination of an on-axis arrangement and the use of a blocking element results in improved signal-to-noise level due to enhanced ion transmission and reduction of noise arising from passage of undesolvated droplets and particles to the mass analyzer.

Abstract translation: 轴上离子源具有电离室和相邻的低压区域。 轴上离子源还包括毛细管，其具有用于支撑电离室和相邻低压区域之间的流体连通的轴向孔，毛细管的轴向孔基本上与位于下游的撇渣器的孔同心对准 在从毛细管的离子路径中。 阻挡元件设置成与毛细管的轴向孔对准并且在孔的相对侧相对于毛细管的对齐布置。 阻塞元件接收流经毛细管的轴向孔并通过撇渣器的孔的液滴或颗粒。 轴上布置和使用阻塞元件的组合导致改善的信噪比水平，这是由于增强的离子传播和减少由未被干燥的液滴和颗粒通过质量分析器而产生的噪声。

公开(公告)号：US07365341B2

公开(公告)日：2008-04-29

申请号：US11290541

申请日：2005-12-01

Applicant: Tetsuro Saito ,  Tatsumi Shoji ,  Yoichi Fukumiya

Inventor： Tetsuro Saito ,  Tatsumi Shoji ,  Yoichi Fukumiya

IPC: H01J27/00 ,  H01T23/00

CPC classification number: H01J37/08 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/0812

Abstract: An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped into a gas cluster stream 8 in a beam form when passing through a skimmer 4. Electrons are emitted from an electron gun 12 to the gas cluster stream 8, whereby the gas cluster in the gas cluster stream is ionized.

Abstract translation: 发光装置50具有气体簇生成室2和喷嘴3，作为用于产生气体簇并将气体簇发射到处理对象10的装置。 从喷嘴3喷出的一组气体团在通过撇渣器4时被成形为波束状的气体团簇8。 电子从电子枪12发射到气体簇8，由此气体团簇流中的气体团被离子化。

公开(公告)号：US20080073559A1

公开(公告)日：2008-03-27

申请号：US11648365

申请日：2006-12-29

Applicant: Thomas Horsky ,  Robert Milgate

Inventor： Thomas Horsky ,  Robert Milgate

IPC: H01J37/08 ,  B67D5/34 ,  H01J27/00

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082

Abstract: A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation. A gate valve and a rotary butterfly valve are shown acting as the upstream throttling valve. Employing a fixed charge of solid material, the temperature of the vaporizer may be held steady for a prolonged period, during which the throttle valve is gradually opened from a lower conductance of its operating range as the charge sublimes. When a greater valve displacement is reached, the temperature is raised, to enable the valve to readjust to its lower conductance setting from which it can again gradually open as more of the charge is consumed.

Abstract translation: 用于将稳定的升华蒸气输送到真空室的蒸气输送系统包括固体材料的蒸发器，机械节流阀和压力计，随后是到真空室的蒸汽导管。 蒸汽流量由蒸发器的温度和位于蒸发器和真空室之间的机械节流阀的电导率的设定决定。 蒸发器的温度通过闭环控制确定为设定点温度。 机械节流阀是电控制的，例如， 阀门位置在压力计的输出端处于闭环控制下。 以这种方式，蒸汽流速可以与压力表输出大致成比例。 暴露于蒸发器到真空室的蒸汽的所有表面都被加热以防止冷凝。 闸阀和旋转蝶阀显示为上游节流阀。 采用固定材料的固定电荷，蒸发器的温度可以长时间保持稳定，在此期间，随着充电升华，节流阀从其工作范围的较低电导逐渐打开。 当达到更大的阀位移时，温度升高，使得阀能够重新调整到其较低的电导设置，随着更多的电荷消耗，它可以再次逐渐打开。

公开(公告)号：US07335897B2

公开(公告)日：2008-02-26

申请号：US11090455

申请日：2005-03-25

Applicant: Zoltán Takáts ,  Bogdan Gologan ,  Justin Michael Wiseman ,  Robert Graham Cooks

Inventor： Zoltán Takáts ,  Bogdan Gologan ,  Justin Michael Wiseman ,  Robert Graham Cooks

IPC: H01J27/00 ,  H01J49/10

CPC classification number: H01J49/142 ,  H01J49/0004 ,  H01J49/0404

Abstract: A new method and system for desorption ionization is described and applied to the ionization of various compounds, including peptides and proteins present on metal, polymer, and mineral surfaces. Desorption electrospray ionization (DESI) is carried out by directing charged droplets and/or ions of a liquid onto the surface to be analyzed. The impact of the charged particles on the surface produces gaseous ions of material originally present on the surface. The resulting mass spectra are similar to normal ESI mass spectra in that they show mainly singly or multiply charged molecular ions of the analytes. The DESI phenomenon was observed both in the case of conductive and insulator surfaces and for compounds ranging from nonpolar small molecules such as lycopene, the alkaloid coniceine, and small drugs, through polar compounds such as peptides and proteins. Changes in the solution that is sprayed can be used to selectively ionize particular compounds, including those in biological matrices. In vivo analysis is demonstrated.

Abstract translation: 一种解吸电离的新方法和系统被描述和应用于各种化合物的电离，包括存在于金属，聚合物和矿物表面上的肽和蛋白质。 通过将液体的带电液滴和/或离子引导到要分析的表面上来进行解吸电喷雾离子化（DESI）。 带电粒子对表面的影响产生了最初存在于表面上的材料的气态离子。 所得质谱与正常的ESI质谱相似，因为它们主要表现出分析物的单一或多重带电分子离子。 在导电性和绝缘体表面以及通过极性化合物如肽和蛋白质从非极性小分子（如番茄红素，生物碱美西汀和小药物）的化合物观察到DESI现象。 喷雾溶液中的变化可用于选择性地电离特定化合物，包括生物基质中的化合物。 证明体内分析。

公开(公告)号：US07326937B2

公开(公告)日：2008-02-05

申请号：US11076696

申请日：2005-03-09

Applicant: Sandeep Mehta ,  Steven R. Walther ,  Naushad K. Variam

Inventor： Sandeep Mehta ,  Steven R. Walther ,  Naushad K. Variam

IPC: H01J27/00

CPC classification number: H01J37/32412

Abstract: Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.

Abstract translation: 等离子体离子注入装置包括处理室，位于用于支撑衬底的处理室中的压板，包括固体掺杂剂元素的掺杂剂源和用于从固体掺杂剂元素蒸发掺杂剂材料的蒸发器，等离子体源，以产生含有 掺杂剂材料的离子和注入脉冲源，以将注入脉冲施加到压板上，以将掺杂剂材料的离子从等离子体加速到衬底中。

公开(公告)号：US07285788B2

公开(公告)日：2007-10-23

申请号：US11208728

申请日：2005-08-23

Applicant: Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

Inventor： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

IPC: H01J27/00 ,  H01J49/42

CPC classification number: H01J37/08 ,  H01J27/024

Abstract: An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

Abstract translation: 离子束提取器通过调节施加到其上形成有狭缝的栅格的电压来控制离子束的方向和强度，从而提高晶片的蚀刻速率的均匀性，从而提高半导体二极管的生产率。 离子束提取器包括离子源以产生离子束和位于离子源的后端处的离子源的至少一个格栅，在由离子源产生的离子束的前进路径中，通过控制离子束来调节离子束的方向 施加到所述至少一个栅格的电压。

公开(公告)号：US20070228301A1

公开(公告)日：2007-10-04

申请号：US11723347

申请日：2007-03-19

Applicant: Masaki Nakano

Inventor： Masaki Nakano

IPC: H01J27/00 ,  G01J3/10

CPC classification number: H01J49/162 ,  H01J49/027 ,  H01J49/16 ,  H05G2/001

Abstract: A target supplier accelerates a target material injected from a nozzle such that a velocity of the target material after accelerated is kept within a predetermined range. The target supplier includes: a target nozzle that injects a target material in a liquid droplet state or solid particle state; an electric charge supplying unit that supplies electric charge to the target material; a charge amount measuring unit that measures an amount of the electric charge supplied to the target material by the electric charge supplying unit; a control unit that controls the electric charge supplying unit in a feedback manner based on a measurement result obtained by the charge amount measuring unit; and an accelerator that accelerates the target material supplied with the electric charge by the electric charge supplying unit.

Abstract translation: 目标供应商加速从喷嘴喷射的目标材料，使得加速后的目标材料的速度保持在预定范围内。 目标供应商包括：将目标材料注入液滴状态或固体颗粒状态的目标喷嘴; 向目标材料供给电荷的电荷供给单元; 电荷量测量单元，其测量由所述电荷供应单元供应到所述目标材料的电荷的量; 控制单元，其基于由所述计费量测量单元获得的测量结果以反馈方式控制所述电荷供给单元; 以及加速器，其加速由电荷供给单元供给的电荷的目标材料。

公开(公告)号：US20070176114A1

公开(公告)日：2007-08-02

申请号：US11647801

申请日：2006-12-29

Applicant: Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

Inventor： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

IPC: H01J27/00

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

Abstract translation: 公开了一种离子注入，其包括具有限制的出口孔的电离室，并且被构造成使得离子化室中的气体或蒸汽的压力显着高于离子被提取外部的提取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域中，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束输送到目标表面，并将输送的离子束的离子注入靶中。