公开(公告)号：US11043379B2

公开(公告)日：2021-06-22

申请号：US16433101

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Methods for depositing an amorphous carbon layer on a substrate are described. A substrate is exposed to a carbon precursor having a structure of Formula (I). Also described are methods of etching a substrate, including forming an amorphous carbon hard mask on a substrate by exposing the substrate to a carbon precursor having the structure of Formula (I).

公开(公告)号：US11043372B2

公开(公告)日：2021-06-22

申请号：US15979842

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/683 ,  H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32 ,  C23C16/27 ,  C23C16/505 ,  C23C16/56 ,  G03F7/20 ,  H01L21/67 ,  C23C16/458 ,  C23C16/26 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/11556

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

公开(公告)号：US11028477B2

公开(公告)日：2021-06-08

申请号：US15297270

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Keiichi Tanaka ,  Eswaranand Venkatasubramanian ,  Mandyam Sriram ,  Bhaskar Jyoti Bhuyan ,  Pramit Manna ,  David Thompson ,  Andrew Short

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  H01L21/762

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US10954129B2

公开(公告)日：2021-03-23

申请号：US16002218

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Chi Lu ,  Chi-I Lang ,  Nancy Fung ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C01B32/28 ,  H01L21/308 ,  C01B32/26 ,  H01L21/311 ,  C01B32/25 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505

Abstract: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.

公开(公告)号：US10886140B2

公开(公告)日：2021-01-05

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US20200035505A1

公开(公告)日：2020-01-30

申请号：US16523262

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US20200027726A1

公开(公告)日：2020-01-23

申请号：US16511081

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/311 ,  H01J37/32

Abstract: Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.

公开(公告)号：US10529568B2

公开(公告)日：2020-01-07

申请号：US15406116

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Pramit Manna ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768

Abstract: Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.

公开(公告)号：US10483102B2

公开(公告)日：2019-11-19

申请号：US15936740

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  C23C16/04 ,  C23C16/02

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20190228982A1

公开(公告)日：2019-07-25

申请号：US16246711

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Rui Cheng ,  Pramit Manna ,  Abhijit Basu Mallick ,  Shishi Jiang ,  Yong Wu ,  Kurtis Leschkies ,  Srinivas Gandikota

IPC: H01L21/3105 ,  C23C16/56 ,  H01L21/02

Abstract: Aspects of the disclosure include methods of processing a substrate. The method includes depositing a conformal layer on a substrate which contains seams. The substrate is treated using a high pressure anneal in the presence of an oxidizer.