RF MEMS ELECTRODES WITH LIMITED GRAIN GROWTH
    64.
    发明申请
    RF MEMS ELECTRODES WITH LIMITED GRAIN GROWTH 审中-公开
    具有有限晶粒生长的RF MEMS电极

    公开(公告)号:US20160200565A1

    公开(公告)日:2016-07-14

    申请号:US14914071

    申请日:2014-08-27

    Inventor: Mickael RENAULT

    Abstract: The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.

    Abstract translation: 本发明一般涉及RF MEMS DVC及其制造方法。 为了确保不发生不期望的晶粒生长并且有助于不均匀的RF电极,可以使用包括AlCu层和包含钛的层的多层堆叠。 钛在更高的温度下扩散到AlCu层中,使得AlCu的晶粒生长将被抑制,并且开关元件可以以一致的结构制造,这在操作期间导致一致的可预测的电容。

    NON-SYMMETRIC ARRAYS OF MEMS DIGITAL VARIABLE CAPACITOR WITH UNIFORM OPERATING CHARACTERISTICS
    65.
    发明申请
    NON-SYMMETRIC ARRAYS OF MEMS DIGITAL VARIABLE CAPACITOR WITH UNIFORM OPERATING CHARACTERISTICS 审中-公开
    具有均匀运算特性的MEMS数字可变电容器的非对称阵列

    公开(公告)号:US20160115014A1

    公开(公告)日:2016-04-28

    申请号:US14895182

    申请日:2014-05-30

    Abstract: The present invention generally relates to a MEMS DVC. The MEMS DVC has an RF electrode and is formed above a CMOS substrate. To reduce noise in the RF signal, a poly-resistor that is connected between a waveform controller and the electrodes of the MEMS element, may be surrounded by an isolated p-well or an isolated n-well. The isolated well is coupled to an RF ground shield that is disposed between the poly-resistor and the MEMS element. Due to the presence of the isolated well that surrounds the poly-resistor, the substrate resistance does not influence the dynamic behavior of each MEMS element in the MEMS DVC and noise in the RF signal is reduced.

    Abstract translation: 本发明一般涉及一种MEMS DVC。 MEMS DVC具有RF电极并且形成在CMOS衬底之上。 为了降低RF信号中的噪声,连接在波形控制器和MEMS元件的电极之间的多电阻器可以被隔离的p阱或隔离的n阱包围。 隔离的阱耦合到设置在多电阻器和MEMS元件之间的RF接地屏蔽。 由于存在围绕多电阻器的隔离阱,衬底电阻不影响MEMS DVC中每个MEMS元件的动态特性,并且降低了RF信号中的噪声。

    MEMS device with a stress-isolation structure
    66.
    发明授权
    MEMS device with a stress-isolation structure 有权
    具有应力隔离结构的MEMS器件

    公开(公告)号:US09296606B2

    公开(公告)日:2016-03-29

    申请号:US14172894

    申请日:2014-02-04

    Abstract: A method and system for a MEMS device is disclosed. The MEMS device includes a free layer, with a first portion and a second portion. The MEMS device also includes a underlying substrate, the free layer movably positioned relative to the underlying substrate. The first portion and second portion of the free layer are coupled through at least one stem. A sense material is disposed over portions of the second portion of the free layer. Stress in the sense material and second portion of the free layer does not cause substantial deflection of the first portion.

    Abstract translation: 公开了一种用于MEMS器件的方法和系统。 MEMS器件包括具有第一部分和第二部分的自由层。 MEMS器件还包括下面的衬底,自由层相对于下面的衬底可移动地定位。 自由层的第一部分和第二部分通过至少一个杆连接。 感测材料设置在自由层的第二部分的部分上。 感应材料和自由层的第二部分的应力不会引起第一部分的实质的偏转。

    MEMS and method of manufacturing the same
    67.
    发明授权
    MEMS and method of manufacturing the same 有权
    MEMS及其制造方法

    公开(公告)号:US09287050B2

    公开(公告)日:2016-03-15

    申请号:US13413889

    申请日:2012-03-07

    Applicant: Tomohiro Saito

    Inventor: Tomohiro Saito

    Abstract: According to one embodiment, a MEMS includes a first electrode, a first auxiliary structure and a second electrode. The first electrode is provided on a substrate. The first auxiliary structure is provided on the substrate and adjacent to the first electrode. The first auxiliary structure is in an electrically floating state. The second electrode is provided above the first electrode and the first auxiliary structure, and is driven in a direction of the first electrode.

    Abstract translation: 根据一个实施例,MEMS包括第一电极,第一辅助结构和第二电极。 第一电极设置在基板上。 第一辅助结构设置在基板上并与第一电极相邻。 第一辅助结构处于电浮动状态。 第二电极设置在第一电极和第一辅助结构之上,并且沿第一电极的方向被驱动。

    MEMS device with sealed cavity and release chamber and related double release method
    68.
    发明授权
    MEMS device with sealed cavity and release chamber and related double release method 有权
    具有密封腔和释放室的MEMS器件及相关的双重释放方法

    公开(公告)号:US09272901B2

    公开(公告)日:2016-03-01

    申请号:US14508673

    申请日:2014-10-07

    Abstract: Disclosed is a MEMS device having lower, upper and release chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a first sealing layer. The MEMS device further includes a release chamber between the top MEMS plate and a second sealing layer, the release chamber allowing gaseous content of the upper and/or the lower chambers to be released. Also disclosed is a double release method for releasing gaseous content of the upper and/or the lower chambers.

    Abstract translation: 公开了具有具有相似压力和/或类似气体化学性质的下部,上部和释放室的MEMS器件。 MEMS器件包括顶部MEMS板和底部MEMS板。 MEMS器件还包括在底部MEMS板和顶部MEMS板之间的下腔室,以及位于顶部MEMS板和第一密封层之间的上腔室。 MEMS装置还包括在顶部MEMS板和第二密封层之间的释放室,释放室允许上部和/或下部腔室的气体含量被释放。 还公开了用于释放上部和/或下部室的气体含量的双重释放方法。

    Variable capacitor
    70.
    发明授权
    Variable capacitor 有权
    可变电容器

    公开(公告)号:US09240282B2

    公开(公告)日:2016-01-19

    申请号:US14066498

    申请日:2013-10-29

    Inventor: Shinji Murata

    CPC classification number: H01G5/16 B81B3/0056 B81B2201/0221 H01G5/18 H01G5/38

    Abstract: A variable capacitor includes a plurality of variable capacitor elements connected in parallel with one another, the variable capacitor elements each including a fixed electrode and a movable electrode facing each other, a beam supporting the movable electrode displaceably, and a drive electrode supplied with a drive voltage to change spacing between the fixed electrode and the movable electrode. The variable capacitor further includes a drive control unit configured to sequentially apply an AC drive voltage to the drive electrodes of the variable capacitor elements with a predetermined phase difference for each element. The sum of capacitances of the variable capacitor elements is an output capacitance.

    Abstract translation: 可变电容器包括彼此并联连接的多个可变电容器元件,每个可变电容器元件包括固定电极和彼此面对的可动电极,可移动地支撑可动电极的光束和提供有驱动器的驱动电极 电压以改变固定电极和可动电极之间的间隔。 可变电容器还包括驱动控制单元,其配置成以对于每个元件具有预定的相位差顺序地将AC驱动电压施加到可变电容器元件的驱动电极。 可变电容器元件的电容之和是输出电容。

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