Abstract:
An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.
Abstract:
The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.
Abstract:
A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
Abstract:
The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.
Abstract:
The present invention generally relates to a MEMS DVC. The MEMS DVC has an RF electrode and is formed above a CMOS substrate. To reduce noise in the RF signal, a poly-resistor that is connected between a waveform controller and the electrodes of the MEMS element, may be surrounded by an isolated p-well or an isolated n-well. The isolated well is coupled to an RF ground shield that is disposed between the poly-resistor and the MEMS element. Due to the presence of the isolated well that surrounds the poly-resistor, the substrate resistance does not influence the dynamic behavior of each MEMS element in the MEMS DVC and noise in the RF signal is reduced.
Abstract:
A method and system for a MEMS device is disclosed. The MEMS device includes a free layer, with a first portion and a second portion. The MEMS device also includes a underlying substrate, the free layer movably positioned relative to the underlying substrate. The first portion and second portion of the free layer are coupled through at least one stem. A sense material is disposed over portions of the second portion of the free layer. Stress in the sense material and second portion of the free layer does not cause substantial deflection of the first portion.
Abstract:
According to one embodiment, a MEMS includes a first electrode, a first auxiliary structure and a second electrode. The first electrode is provided on a substrate. The first auxiliary structure is provided on the substrate and adjacent to the first electrode. The first auxiliary structure is in an electrically floating state. The second electrode is provided above the first electrode and the first auxiliary structure, and is driven in a direction of the first electrode.
Abstract:
Disclosed is a MEMS device having lower, upper and release chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a first sealing layer. The MEMS device further includes a release chamber between the top MEMS plate and a second sealing layer, the release chamber allowing gaseous content of the upper and/or the lower chambers to be released. Also disclosed is a double release method for releasing gaseous content of the upper and/or the lower chambers.
Abstract:
A MEMS electrostatic actuator includes a bottom plate affixed to a substrate and a top plate suspended above the bottom plate. The top plate has a parallel plate center section and two rotating members electrically connected to the center section. Each rotating member is attached centrally of the rotating member for rotation about an axis of rotation to a set of anchor posts. The attachment includes at least one pair of torsional springs attached along each axis, each spring comprising a rectangular metal square that twists as the rotational members rotate. Electrostatic pull-down electrodes are underneath each rotational member.
Abstract:
A variable capacitor includes a plurality of variable capacitor elements connected in parallel with one another, the variable capacitor elements each including a fixed electrode and a movable electrode facing each other, a beam supporting the movable electrode displaceably, and a drive electrode supplied with a drive voltage to change spacing between the fixed electrode and the movable electrode. The variable capacitor further includes a drive control unit configured to sequentially apply an AC drive voltage to the drive electrodes of the variable capacitor elements with a predetermined phase difference for each element. The sum of capacitances of the variable capacitor elements is an output capacitance.