公开(公告)号：US20170309532A1

公开(公告)日：2017-10-26

申请号：US15648135

申请日：2017-07-12

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christian Rivero

IPC: H01L23/04 ,  B81B3/00 ,  H01L49/02 ,  H01L23/522 ,  H01G5/18 ,  H01L27/06

CPC classification number: H01L23/04 ,  B81B3/0021 ,  B81B2201/0221 ,  H01G5/18 ,  H01L23/5223 ,  H01L27/0629 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.

公开(公告)号：US09711291B2

公开(公告)日：2017-07-18

申请号：US14779542

申请日：2014-04-02

Applicant: CAVENDISH KINETICS, INC.

Inventor： Richard L. Knipe ,  Robertus Petrus Van Kampen

IPC: H01G5/18 ,  B81B3/00 ,  H01G5/16 ,  H01H59/00 ,  H01G5/011 ,  H01G5/013

CPC classification number: H01G5/18 ,  B81B3/0051 ,  B81B3/007 ,  B81B2201/0221 ,  H01G5/011 ,  H01G5/0136 ,  H01G5/16 ,  H01H59/0009 ,  H01H2059/0072

Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

公开(公告)号：US09573801B2

公开(公告)日：2017-02-21

申请号：US15044016

申请日：2016-02-15

Applicant: Texas Instruments Incorporated

Inventor： Arun Gupta ,  William C. McDonald ,  Adam Fruehling ,  Ivan Kmecko ,  Lance Barron ,  Divyanshu Agrawal

IPC: H01L27/20 ,  H01L29/84 ,  B81B7/00 ,  B81C1/00 ,  B81B3/00 ,  B81B7/02

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/0064 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06 ,  B81B2207/012 ,  B81B2207/096 ,  B81C1/00158 ,  H01G5/011 ,  H01G5/40

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Abstract translation: 一种MEM致动器装置和形成方法包括致动器元件的阵列。 每个致动器元件具有可移动的顶板和底板。 顶板包括用于中心膜构件运动的中心膜构件和悬臂弹簧。 底板由在中央膜构件下方延伸的两个RF信号线组成。 MEM静电致动器装置包括CMOS晶片，MEM晶片和球接合组件。 互连由球接合到通过MEMS晶片延伸的相关的通硅通孔（TSV）。 RF信号路径包括通过TSV电连接到水平进给杆并且从第一水平进给杆垂直地连接到阵列的每一列中的球形接合。 金属结合环在CMOS晶片和MEMS晶片之间延伸。 射频接地回路从覆盖阵列的接地屏蔽到金属接合环，TSV和球接合完成。

公开(公告)号：US20160200565A1

公开(公告)日：2016-07-14

申请号：US14914071

申请日：2014-08-27

Applicant: CAVENDISH KINETICS, INC

Inventor： Mickael RENAULT

IPC: B81B7/00 ,  B81C1/00 ,  H01G5/18 ,  B81B3/00

CPC classification number: B81B7/0006 ,  B81B3/0078 ,  B81B2201/0221 ,  B81C1/00095 ,  B81C1/00341 ,  H01G5/18 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0052 ,  H01H2001/0084

Abstract: The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.

Abstract translation: 本发明一般涉及RF MEMS DVC及其制造方法。 为了确保不发生不期望的晶粒生长并且有助于不均匀的RF电极，可以使用包括AlCu层和包含钛的层的多层堆叠。 钛在更高的温度下扩散到AlCu层中，使得AlCu的晶粒生长将被抑制，并且开关元件可以以一致的结构制造，这在操作期间导致一致的可预测的电容。

公开(公告)号：US20160115014A1

公开(公告)日：2016-04-28

申请号：US14895182

申请日：2014-05-30

Applicant: CAVENDISH KINETICS, INC.

Inventor： Robertus Petrus VAN KAMPEN

IPC: B81B3/00 ,  H01G5/16

CPC classification number: B81B3/0086 ,  B81B2201/0221 ,  B81B2203/04 ,  H01G5/16 ,  H01G5/18 ,  H01G5/38 ,  H01H59/0009

Abstract: The present invention generally relates to a MEMS DVC. The MEMS DVC has an RF electrode and is formed above a CMOS substrate. To reduce noise in the RF signal, a poly-resistor that is connected between a waveform controller and the electrodes of the MEMS element, may be surrounded by an isolated p-well or an isolated n-well. The isolated well is coupled to an RF ground shield that is disposed between the poly-resistor and the MEMS element. Due to the presence of the isolated well that surrounds the poly-resistor, the substrate resistance does not influence the dynamic behavior of each MEMS element in the MEMS DVC and noise in the RF signal is reduced.

Abstract translation: 本发明一般涉及一种MEMS DVC。 MEMS DVC具有RF电极并且形成在CMOS衬底之上。 为了降低RF信号中的噪声，连接在波形控制器和MEMS元件的电极之间的多电阻器可以被隔离的p阱或隔离的n阱包围。 隔离的阱耦合到设置在多电阻器和MEMS元件之间的RF接地屏蔽。 由于存在围绕多电阻器的隔离阱，衬底电阻不影响MEMS DVC中每个MEMS元件的动态特性，并且降低了RF信号中的噪声。

公开(公告)号：US09296606B2

公开(公告)日：2016-03-29

申请号：US14172894

申请日：2014-02-04

Applicant: INVENSENSE, INC.

Inventor： Kirt Reed Williams ,  Matthew Julian Thompson ,  Joseph Seeger

IPC: G01P15/08 ,  B81B3/00 ,  G01N3/20 ,  G01P15/125 ,  B81C1/00 ,  G01K1/00

CPC classification number: B81B3/0051 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81C1/00666 ,  G01K1/00 ,  G01N3/20 ,  G01P15/125 ,  G01P2015/0828

Abstract: A method and system for a MEMS device is disclosed. The MEMS device includes a free layer, with a first portion and a second portion. The MEMS device also includes a underlying substrate, the free layer movably positioned relative to the underlying substrate. The first portion and second portion of the free layer are coupled through at least one stem. A sense material is disposed over portions of the second portion of the free layer. Stress in the sense material and second portion of the free layer does not cause substantial deflection of the first portion.

Abstract translation: 公开了一种用于MEMS器件的方法和系统。 MEMS器件包括具有第一部分和第二部分的自由层。 MEMS器件还包括下面的衬底，自由层相对于下面的衬底可移动地定位。 自由层的第一部分和第二部分通过至少一个杆连接。 感测材料设置在自由层的第二部分的部分上。 感应材料和自由层的第二部分的应力不会引起第一部分的实质的偏转。

公开(公告)号：US09287050B2

公开(公告)日：2016-03-15

申请号：US13413889

申请日：2012-03-07

Applicant: Tomohiro Saito

Inventor： Tomohiro Saito

IPC: H01L29/84 ,  H01G5/18 ,  B81C1/00

CPC classification number: H01G5/18 ,  B81B2201/018 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0126

Abstract: According to one embodiment, a MEMS includes a first electrode, a first auxiliary structure and a second electrode. The first electrode is provided on a substrate. The first auxiliary structure is provided on the substrate and adjacent to the first electrode. The first auxiliary structure is in an electrically floating state. The second electrode is provided above the first electrode and the first auxiliary structure, and is driven in a direction of the first electrode.

Abstract translation: 根据一个实施例，MEMS包括第一电极，第一辅助结构和第二电极。 第一电极设置在基板上。 第一辅助结构设置在基板上并与第一电极相邻。 第一辅助结构处于电浮动状态。 第二电极设置在第一电极和第一辅助结构之上，并且沿第一电极的方向被驱动。

公开(公告)号：US09272901B2

公开(公告)日：2016-03-01

申请号：US14508673

申请日：2014-10-07

Applicant: Newport Fab, LLC

Inventor： Michael J. DeBar ,  David J. Howard

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00293 ,  B81B2201/0221 ,  B81B2201/0271 ,  B81C2203/0145

Abstract: Disclosed is a MEMS device having lower, upper and release chambers with a similar pressure and/or a similar gaseous chemistry. The MEMS device includes a top MEMS plate and a bottom MEMS plate. The MEMS device also includes a lower chamber between the bottom MEMS plate and the top MEMS plate, and an upper chamber between the top MEMS plate and a first sealing layer. The MEMS device further includes a release chamber between the top MEMS plate and a second sealing layer, the release chamber allowing gaseous content of the upper and/or the lower chambers to be released. Also disclosed is a double release method for releasing gaseous content of the upper and/or the lower chambers.

Abstract translation: 公开了具有具有相似压力和/或类似气体化学性质的下部，上部和释放室的MEMS器件。 MEMS器件包括顶部MEMS板和底部MEMS板。 MEMS器件还包括在底部MEMS板和顶部MEMS板之间的下腔室，以及位于顶部MEMS板和第一密封层之间的上腔室。 MEMS装置还包括在顶部MEMS板和第二密封层之间的释放室，释放室允许上部和/或下部腔室的气体含量被释放。 还公开了用于释放上部和/或下部室的气体含量的双重释放方法。

公开(公告)号：US09263973B2

公开(公告)日：2016-02-16

申请号：US14691962

申请日：2015-04-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Arun Kumar Gupta ,  William Craig McDonald

IPC: H01H57/00 ,  H02N2/12 ,  B81B3/00 ,  B81B7/02

CPC classification number: H02N2/12 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06

Abstract: A MEMS electrostatic actuator includes a bottom plate affixed to a substrate and a top plate suspended above the bottom plate. The top plate has a parallel plate center section and two rotating members electrically connected to the center section. Each rotating member is attached centrally of the rotating member for rotation about an axis of rotation to a set of anchor posts. The attachment includes at least one pair of torsional springs attached along each axis, each spring comprising a rectangular metal square that twists as the rotational members rotate. Electrostatic pull-down electrodes are underneath each rotational member.

公开(公告)号：US09240282B2

公开(公告)日：2016-01-19

申请号：US14066498

申请日：2013-10-29

Applicant: ALPS ELECTRIC CO., LTD.

Inventor： Shinji Murata

IPC: H01G7/06 ,  H01G5/16 ,  H01G5/38 ,  H01G5/18 ,  B81B3/00

CPC classification number: H01G5/16 ,  B81B3/0056 ,  B81B2201/0221 ,  H01G5/18 ,  H01G5/38

Abstract: A variable capacitor includes a plurality of variable capacitor elements connected in parallel with one another, the variable capacitor elements each including a fixed electrode and a movable electrode facing each other, a beam supporting the movable electrode displaceably, and a drive electrode supplied with a drive voltage to change spacing between the fixed electrode and the movable electrode. The variable capacitor further includes a drive control unit configured to sequentially apply an AC drive voltage to the drive electrodes of the variable capacitor elements with a predetermined phase difference for each element. The sum of capacitances of the variable capacitor elements is an output capacitance.

Abstract translation: 可变电容器包括彼此并联连接的多个可变电容器元件，每个可变电容器元件包括固定电极和彼此面对的可动电极，可移动地支撑可动电极的光束和提供有驱动器的驱动电极 电压以改变固定电极和可动电极之间的间隔。 可变电容器还包括驱动控制单元，其配置成以对于每个元件具有预定的相位差顺序地将AC驱动电压施加到可变电容器元件的驱动电极。 可变电容器元件的电容之和是输出电容。