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    Method of Electrochemical Fabrication
    62.
    发明申请
    Method of Electrochemical Fabrication 审中-公开
    电化学制造方法

    公开(公告)号：US20080110857A1

    公开(公告)日：2008-05-15

    申请号：US11927342

    申请日：2007-10-29

    Applicant: Adam L. Cohen

    Inventor： Adam L. Cohen

    IPC: C23F1/00 ,  B23H3/00

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

    System and method for forming through wafer vias using reverse pulse plating
    63.
    发明申请
    System and method for forming through wafer vias using reverse pulse plating 审中-公开
    使用反向脉冲电镀形成通过晶片通孔的系统和方法

    公开(公告)号：US20080006850A1

    公开(公告)日：2008-01-10

    申请号：US11482944

    申请日：2006-07-10

    Applicant: Kimon Ribnicek ,  Gregory A. Carlson ,  Paulo Silveira da Motta ,  Jian Zhao

    Inventor： Kimon Ribnicek ,  Gregory A. Carlson ,  Paulo Silveira da Motta ,  Jian Zhao

    IPC: H01L29/76 ,  H01L21/20

    CPC classification number: H01L21/76898 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C2201/0181

    Abstract: A method for forming through wafer vias in a substrate uses a Cr/Au seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, a reverse plating process uses a forward current to plate the bottom and sides of the blind hole, and a reverse current to de-plate material in or near the top. Using the reverse pulse plating technique, the plating proceeds generally from the bottom of the blind hole to the top. To form the through wafer via, the back side of the substrate is ground or etched away to remove material up to and including the dead-end wall of the blind hole.

    Abstract translation: 用于在衬底中形成晶片通孔的方法使用Cr / Au种子层来平坦化形成在衬底前侧的盲沟的底部。 此后，反向电镀工艺使用正向电流来平板盲孔的底部和侧面，以及在顶部中或附近的去镀材料的反向电流。 使用反向脉冲电镀技术，电镀通常从盲孔的底部到顶部。 为了形成贯通晶片通孔，将衬底的背面研磨或蚀刻掉以去除直到并包括盲孔的死端壁的材料。

    Method for electrochemical fabrication
    64.
    发明授权
    Method for electrochemical fabrication 有权
    电化学制造方法

    公开(公告)号：US06790377B1

    公开(公告)日：2004-09-14

    申请号：US09493496

    申请日：2000-01-28

    Applicant: Adam L. Cohen

    Inventor： Adam L. Cohen

    IPC: C03C1500

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method includes forming a layer, the forming of the layer includes: a) contacting a substrate with a first article, the first article includes a support and a conformable mask disposed in a pattern on the support; b) electroplating a first metal from a source of metal ions onto the substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the substrate. The method may further involve one or more of (1) selectively depositing or non-selectively depositing one or more additional materials to complete formation of the layer, (2) planarizing deposited material after each deposition or after all depositions for a layer, and/or (3) forming layers adjacent previously formed layers to build up a structure from a plurality of adhered layers. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法包括形成层，所述层的形成包括：a）使基底与第一制品接触，所述第一制品包括以支持物的形式设置的支撑体和适形掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述衬底上，所述第一图案对应于所述适形掩模图案的所述补体; 以及c）从所述基底中去除所述第一制品。 该方法还可以包括以下一个或多个：（1）选择性地沉积或非选择性地沉积一种或多种附加材料以完成层的形成，（2）在每次沉积之后或在所有沉积之后平坦化沉积的材料，以及/ 或（3）形成与先前形成的层相邻的层，以从多个附着层建立结构。 还公开了电镀制品和电镀装置。

    Article, method, and apparatus for electrochemical fabrication
    65.
    发明申请
    Article, method, and apparatus for electrochemical fabrication 审中-公开
    电化学制造的文章，方法和设备

    公开(公告)号：US20010014409A1

    公开(公告)日：2001-08-16

    申请号：US09823034

    申请日：2001-03-29

    Inventor： Adam L. Cohen

    IPC: B21C037/00 ,  C25D001/00 ,  C25D001/10

    CPC classification number: C25D1/003 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D5/022 ,  C25D5/10 ,  C25D5/12 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12431

    Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ion onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

    Methods of fabricating micro electro-mechanical systems structures
    67.
    发明授权
    Methods of fabricating micro electro-mechanical systems structures 有权

    公开(公告)号：US11845654B2

    公开(公告)日：2023-12-19

    申请号：US17352149

    申请日：2021-06-18

    Applicant: The University of British Columbia

    Inventor： Edmond Cretu ,  Chang Ge

    IPC: B81C1/00

    CPC classification number: B81C1/00476 ,  B81C2201/0105 ,  B81C2201/0133 ,  B81C2201/0143 ,  B81C2201/0181

    Abstract: According to at least one embodiment, a method of fabricating a micro electro-mechanical systems (MEMS) structure is disclosed. The method involves causing an etchant to remove a portion of a sacrificial layer of the MEMS structure, the sacrificial layer between a structural layer of the MEMS structure and a substrate of the MEMS structure. In this embodiment, causing the etchant to remove the portion of the sacrificial layer involves causing a target portion of the substrate to be released from the MEMS structure. According to another embodiment, another method of fabricating a MEMS structure is disclosed. The method involves causing an etchant including water to remove a portion of a sacrificial layer of the MEMS structure, the sacrificial layer between a structural layer of the MEMS structure and a substrate of the MEMS structure. In this embodiment, the sacrificial layer and the substrate are hydrophobic.

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