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    Bi-directional released-beam sensor
    63.
    发明授权
    Bi-directional released-beam sensor 有权
    双向释放光束传感器

    公开(公告)号：US07989906B2

    公开(公告)日：2011-08-02

    申请号：US11562331

    申请日：2006-11-21

    Applicant: Joseph Colby McAlexander, III

    Inventor： Joseph Colby McAlexander, III

    IPC: H01L49/02

    CPC classification number: H01H35/14 ,  B81B2201/0235 ,  B81B2201/032 ,  B81C1/0015 ,  B81C2201/019 ,  G01P15/125 ,  G01P15/135 ,  G01P2015/0828 ,  H01H1/0036

    Abstract: An acceleration sensor includes a semiconductor substrate, a first layer formed on the substrate, a first aperture within the first layer, and a beam coupled at a first end to the substrate and suspended above the first layer for a portion of the length thereof. The beam includes a first boss coupled to a lower surface thereof and suspended within the first aperture, and a second boss coupled to an upper surface of the second end of the beam. A second layer is positioned on the first layer over the beam and includes a second aperture within which the second boss is suspended by the beam. Contact surfaces are positioned within the apertures such that acceleration of the substrate exceeding a selected threshold in either direction along a selected axis will cause the beam to flex counter to the direction of acceleration and make contact through one of the bosses with one of the contact surfaces.

    Abstract translation: 加速度传感器包括半导体衬底，形成在衬底上的第一层，第一层内的第一孔，以及在第一端处耦合到衬底并在其长度的一部分上悬浮在第一层上方的梁。 梁包括联接到其下表面并悬挂在第一孔内的第一凸起，以及联接到梁的第二端的上表面的第二凸台。 第二层位于梁上的第一层上，并且包括第二孔，第二凸起由梁悬挂在该第二孔内。 接触表面定位在孔内，使得沿着所选择的轴线在任一方向超过选定阈值的基底的加速度将导致梁相对于加速方向弯曲并且通过一个凸起与其中一个接触表面 。

    Electrochemically Fabricated Structures Having Dielectric or Active Bases and Methods of and Apparatus for Producing Such Structures
    64.
    发明申请
    Electrochemically Fabricated Structures Having Dielectric or Active Bases and Methods of and Apparatus for Producing Such Structures 审中-公开
    具有电介质或活性碱的电化学结构和用于生产这种结构的方法和装置

    公开(公告)号：US20110180410A1

    公开(公告)日：2011-07-28

    申请号：US13010324

    申请日：2011-01-20

    Applicant: Jeffrey A. Thompson ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley

    Inventor： Jeffrey A. Thompson ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley

    IPC: C25D1/00

    CPC classification number: C25D1/003 ,  B81C1/00373 ,  B81C2201/0181 ,  B81C2201/019

    Abstract: Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are formed from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurring during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.

    Abstract translation: 多层结构在临时的（例如导电的）衬底上电化学地制造，然后在永久（例如电介质，图案化，多材料或其他功能）的衬底上结合并从临时衬底去除。 在一些实施例中，结构由顶层到底层形成，使得结构的底层变得粘附到永久性基底上，而在其它实施例中，结构由底层到顶层形成，然后是双层衬底交换 发生。 永久性基材可以是与层状结构结合的固体（例如通过粘合剂），或者可以作为在凝固期间发生结合而邻近或部分地围绕结构的一部分固化的可流动材料开始。 多层结构可以在附着永久性基底之前从牺牲材料上释放，或者在附着后可以释放多层结构。

    Forming a Micro Electro Mechanical System
    66.
    发明申请
    Forming a Micro Electro Mechanical System 有权
    形成微机电系统

    公开(公告)号：US20110059566A1

    公开(公告)日：2011-03-10

    申请号：US12948477

    申请日：2010-11-17

    Applicant: Sriram Ramamoorthi ,  Donald J. Milligan

    Inventor： Sriram Ramamoorthi ,  Donald J. Milligan

    IPC: H01L21/02

    CPC classification number: B81C1/00253 ,  B81B2201/0235 ,  B81B2203/051 ,  B81B2203/053 ,  B81C1/00142 ,  B81C3/004 ,  B81C2201/019 ,  B81C2203/058

    Abstract: A method of forming a micro-electro mechanical system (MEMS), includes (1) removing material from a first wafer to define a first movable portion corresponding to an x-y accelerometer and a second movable portion corresponding to a z accelerometer, where each movable portion comprises at least one flexure member and at least one proof mass, each proof mass and flexure member being formed by the selective removal of material from a top side and a bottom side of first wafer; (2) bonding the first wafer to a second wafer comprising an electronic circuit, such that a gap is defined between the first wafer and the second wafer. The thickness of the at least one flexure member of the first movable portion is independent of a thickness of the at least one flexure member of the second movable portion and a thickness of the proof mass of the first movable portion is independent of a thickness of the at least one proof mass of the second movable portion.

    Abstract translation: 一种形成微机电系统（MEMS）的方法包括：（1）从第一晶片去除材料以限定对应于xy加速度计的第一可移动部分和对应于z i加速度计的第二可移动部分，其中每个可移动部分包括 至少一个弯曲构件和至少一个检验质量块，通过从第一晶片的顶侧和底侧选择性地去除材料形成每个检验质量和挠曲构件; （2）将第一晶片接合到包括电子电路的第二晶片，使得在第一晶片和第二晶片之间限定间隙。 第一可移动部分的至少一个弯曲部件的厚度与第二可动部分的至少一个弯曲部件的厚度无关，并且第一可移动部分的检验质量块的厚度与 所述第二可动部的至少一个检验质量。

    Method of manufacturing vibrating micromechanical structures
    70.
    发明授权
    Method of manufacturing vibrating micromechanical structures 有权
    制造振动微机械结构的方法

    公开(公告)号：US07836574B2

    公开(公告)日：2010-11-23

    申请号：US12164308

    申请日：2008-06-30

    Applicant: Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

    Inventor： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

    IPC: H04R31/00

    CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

    Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

    Abstract translation: 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记 被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

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